Справочник транзисторов. 2SA1201O

 

Биполярный транзистор 2SA1201O - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2SA1201O
   Маркировка: DO
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.5 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 120 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 120 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.8 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 120(typ) MHz
   Ёмкость коллекторного перехода (Cc): 30(max) pf
   Статический коэффициент передачи тока (hfe): 80
   Корпус транзистора: SOT89

 Аналоги (замена) для 2SA1201O

 

 

2SA1201O Datasheet (PDF)

 ..1. Size:1583K  cn shikues
2sa1201o 2sa1201y.pdf

2SA1201O
2SA1201O

 7.1. Size:151K  toshiba
2sa1201.pdf

2SA1201O
2SA1201O

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit: mm Power Amplifier Applications High voltage: VCEO = -120 V High transition frequency: f = 120 MHz (typ.) T Small flat package PC = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25C) Characteri

 7.2. Size:386K  mcc
2sa1201-o.pdf

2SA1201O
2SA1201O

MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

 7.3. Size:386K  mcc
2sa1201-y.pdf

2SA1201O
2SA1201O

MCC2SA1201-OMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311 2SA1201-YPhone: (818) 701-4933Fax: (818) 701-4939Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information)PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

 7.4. Size:81K  utc
2sa1201.pdf

2SA1201O
2SA1201O

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage: VCEO= -120V *High transition frequency: fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb

 7.5. Size:228K  secos
2sa1201.pdf

2SA1201O
2SA1201O

2SA1201PNP Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductSOT-89FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF.

 7.6. Size:880K  jiangsu
2sa1201.pdf

2SA1201O

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1201 TRANSISTOR (PNP) 1. BASE FEATURES High voltage 2. COLLECTOR High transition frequency Complementary to 2SC2881 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter ValueUnitVCBO -120 Collector-Base Voltage V VCEO -120

 7.7. Size:276K  htsemi
2sa1201.pdf

2SA1201O
2SA1201O

2SA1 201SOT-89 TRANSISTOR(PNP)1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter ValueUnitsVCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Co

 7.8. Size:217K  lge
2sa1201 sot-89.pdf

2SA1201O
2SA1201O

2SA1201SOT-89 Transistor(PNP)1. BASE SOT-892. COLLECTOR 1 4.6B4.41.6 1.82 1.41.43. EMITTER 3 2.64.25Features 2.43.75 0.8 High voltage MIN0.53 High transition frequency 0.400.480.442x)0.13 B0.35 0.371.5 Complementary to 2SC2881 3.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol P

 7.9. Size:345K  willas
2sa1201.pdf

2SA1201O
2SA1201O

FM120-M WILLASTHRU2SA1201SOT-89 Plastic-Encapsulate TransistorsFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Batch process design, excellent power dissipation offers better reverSOD-123HTRANSISTOR se leakage current and thermal resistance.(PNP) Low profile surface mounted applica

 7.10. Size:646K  kexin
2sa1201.pdf

2SA1201O
2SA1201O

SMD Type TransistorsPNP Transistors2SA12011.70 0.1 Features High voltage High transition frequency Complementary to 2SC28810.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect

Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

 

 
Back to Top