Ordering number:ENN1032BPNP/NPN Epitaxial Planar Silicon Transistors2SA1248/2SC3116160V/700mA Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters.unit:mm2009BFeatures[2SA1248/2SC3116] High breakdown voltage. 8.02.74.0 Large current capacity. Using MBIT process3.01.60.80.80.60.51 : Emitter1 2 32 : Co

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications Excellent hFE linearity : h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C: h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage : V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit: mm VHF~UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -15 VCollector-emitter voltage VCEO -8 VEmitter-base voltage VEBO -2 VCollector current IC -30 mA

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time: t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -60

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit: mm Power Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time: t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollecto

Ordering number:ENN1060CPNP/NPN Epitaxial Planar Silicon Transistors2SA1249/2SC3117160V/1.5A Switching ApplicationsUses Package Dimensions Color TV sound output, converters, inverters. unit:mm2009BFeatures [2SA1249/2SC3117]8.0 High breakdown voltage.2.74.0 Large current capacity. Adoption of MBIT process.3.01.60.80.80.60.51 : Emitter1 2 32

Ordering number:ENN1047CPNP/NPN Epitaxial Planar Silicon Transistors2SA1246/2SC3114High-VEBO, AF Amp ApplicationsFeatures Package Dimensions High VEBO.unit:mm Wide ASO and highly resistant to breakdown.2003B[2SA1246/2SC3114]5.04.04.00.450.50.440.451 2 31 : Emitter2 : Collector( ) : 2SA1246 3 : Base1.3 1.3 SANYO : NPSpecificationsAbsolute Maxim

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

JMnic Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION With TO-126 package Complement to type 2SC3117 High breakdown voltage Large current capacity APPLICATIONS For color TV sound output,converters, Inverters applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=2

2SA1242(PNP)TO-251/TO-252-2L TransistorTO-2511. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity : hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) : hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage : VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

SMD Type TransistorsPNP Transistors2SA1245SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-30mA1 2 Collector Emitter Voltage VCEO=-8V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Col

DIP Type TransistorsPNP Transistors2SA1244TO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50

2SA1244PNP TransistorsTO-251 Features Low collector saturation voltage1 2 3 High speed switching time: tstg = 1.0 s (typ.) Complementary to 2SC30741 321 Base2 Collector3 EmitterUnit: mm Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltag

isc Silicon PNP Power Transistor 2SA1249DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -160V (Min)(BR)CEOLarge Current CapacityComplement to Type 2SC3117Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV sound output, converters, inverters.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1242DESCRIPTIONh =100-320(I = -0.5A; V = -2V)FE C CEh =70(Min)(I = -4A; V = -2V)FE C CELow Collector-Emitter Saturation Voltage-: V )= -1.0V(Max)( I = -4A; I = -0.1A)CE(sat C B Power Dissipation-High: P = 10W@T =25,P = 10W@Ta=25C C CMinimum Lot-to-Lot variations for robust device performanceand reliable operation

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1244DESCRIPTIONWith TO-251(IPAK) packagingHigh speed switching timeLow collector saturation voltageComplement to type 2SC3074Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMedium power dissipationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U