2SD1000L. Аналоги и основные параметры
Наименование производителя: 2SD1000L
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 9 pf
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: SOT89
Аналоги (замена) для 2SD1000L
- подборⓘ биполярного транзистора по параметрам
2SD1000L даташит
..1. Size:282K cn shikues
2sd1000l 2sd1000k.pdf 
2SD1000 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 0.8 A Power Dissipation Ptot 625
7.2. Size:1152K kexin
2sd1000.pdf 
SMD Type Transistors NPN Transistors 2SD1000 Features 1.70 0.1 Low collector saturation voltage. VCE(sat)
8.5. Size:72K secos
2sd1005.pdf 
2SD1005 1A , 100V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 FEATURES Small Flat Package 4 High Breakdown Voltage Excellent DC Current Gain Linearity 1 2 3 B C A E E C CLASSIFICATION OF hFE(1) Product-Rank 2SD1005-W 2SD1005-V 2SD1005-U B D Range 90 180 1
8.6. Size:178K jiangsu
2sd1005.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1005 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR Small Flat Package High Breakdown Voltage 3. EMITTER Excellent DC Current Gain Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO C
8.7. Size:337K htsemi
2sd1005.pdf 
2SD1005 TRANSISTOR (NPN) SOT-89-3L FEATURES Small Flat Package 1. BASE High Breakdown Voltage Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current 1 A PC Coll
8.8. Size:357K kexin
2sd1007.pdf 
SMD Type Transistors NPN Transistors 2SD1007 1.70 0.1 Features High collector to emitter voltage VCEO 120V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse) * IC (pu
8.9. Size:1048K kexin
2sd1005.pdf 
SMD Type Transistors NPN Tr ansistors 2SD1005 1.70 0.1 Features World standard miniature package SOT-89. High collector to base voltage VCBO 100V. 0.42 0.1 0.46 0.1 Excellent dc current gain linearity hFE=80TYP. (VCE=2V, IC=500mA). 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter vo
8.10. Size:989K kexin
2sd1006.pdf 
SMD Type Transistors SMD Type NPN Transistors 2SD1006 1.70 0.1 Features High collector to emitter voltage VCEO 100V. 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage VEBO 5 V Collector current IC 0.7 A Collector current (pulse
8.11. Size:1117K kexin
2sd1001.pdf 
SMD Type Transistors NPN Transistors 2SD1001 Features 1.70 0.1 High collector saturation voltage. VCE(sat) > 80V Complimentary to 2SB800 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 80 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage VEBO 5 Collect
8.14. Size:632K cn shikues
2sd1005bw 2sd1005bv 2sd1005bu.pdf 
2SD1005 NPN Medium Power Transistors Features High current (max. 1 A). Low voltage (max. 80 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-basevoltage CBO 100 V V CEO Collector-emittervoltageV 80 V Emitter-base voltage VEBO 5V Collector current IC 1A Peak collector current ICM 1.5 A Peak base current IBM 0.2 A Total power dissipation Ptot 1.3 W Stor
8.15. Size:1001K cn hottech
2sd1007.pdf 
2SD1007 NPN Silicon Epitaxial Transistor FEATURES High collector to emitter voltage VCEO 120V. SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Rating Unit Collector-base voltage V 120 V CBO Co
Другие транзисторы: 2SC4226B, 2SC4226C, 2SC4226D, 2SC4226E, 2SC4672Q, 2SC4672R, 2SC5053R, 2SD1000K, C5198, 2SD1007HQ, 2SD1614XL, 2SD1614XM, 2SD1615GK, 2SD1615GL, 2SD1615GM, 2SD1766P, 2SD1766Q
