2SD18981.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.42 0.10.46 0.1 Complementary to 2SB12601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector - Base Voltage VCBO 120Collector - Emitter Voltage VCEO 80 VEmitter - Base Voltage VEBO 5Collector Current - Continuous IC 1

2SD1898NPN-General use transistor 1W 1.0A32V 4Applications Can be used for switching and amplifying inCan be used for switching and amplifying in 1 2 3various electrical and electronic equipmentselectrical and electronic equipments SOT-89 SOT1Base 2Collector 3Collector 3Emitter Absolute Maximum Ratings (Ta = 25) parameters symbol rating unit

Power Transistor (80V, 1A) 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Features Dimensions (Unit : mm) 1) High VCEO, VCEO=80V 2SD18982) High IC, IC=1A (DC) 4.5+0.2-0.11.50.13) Good hFE linearity 1.60.14) Low VCE (sat) 5) Complements the 2SB1260 / (1) (2) (3) 2SB1241 / 2SB1181 0.4+0.1-0.050.40.1 0.50.1 0.40.11.50.1 1.50.13.00.2(1) BaseRO

2SD1898 / 2SD1733Datasheet NPN 1.0A 80V Middle Power TransistorlOutlineCollector MPT3 CPT3Parameter ValueVCEO80VBase Collector IC1.0AEmitter Base Emitter 2SD1898 2SD1733 lFeatures(SC-62) (SC-63) 1) Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB11813) Low VCE(sat)VCE(sat)= 0.4V Max. (IC/IB=500mA/20mA)4

2SD1898DatasheetMiddle Power Transistor (80V / 1A)lOutlinel SOT-89 Parameter Value SC-62 VCEO80VIC1AMPT3lFeatures lInner circuitl l1)Low saturation voltage, tipicallyVCE(sat)=150mV at IC/IB=500mA/50mA.2)Complementary PNP Types : 2SB1260lApplicationlLOW FREQUENCY OUTPUT AMPLIFIERlPackaging specificationslBa

2SD1898Electrical Characteristics @ TA=25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO IC=50A, IE=0Collector-Base Breakdown Voltage 100 VV(BR)CEO IC=1mA, IB=0Collector-Emitter Breakdown Voltage 80 VV(BR)EBO IE=50A, IC=0Emitter-Base Breakdown Voltage 5 VICBO VCB=80V, IE=0Collector Cutoff Current 1 AIEBO VEB=4V, IC=0Emitter Cu

UNISONIC TECHNOLOGIES CO., LTD 2SD1898 NPN SILICON TRANSISTOR POWER TRANSISTOR FEATURES *High VCEO= 80V *High IC= 1A (DC) *Good hFE linearity. *Low VCE(SAT) *Complements the 2SB1260. ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 32SD1898G-x-AA3-R SOT-223 B C E Tape Reel2SD1898G-x-AB3-R SOT-89 B C E Tape Reel2SD1898G-x-AE3-R SOT-23

2SD1898NPN Silicon Elektronische BauelementeEpitaxial Planar TransistorRoHS Compliant ProductDescriptionSOT-89The 2SD1898 is designed for switching applications.Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 4.4 4.6 G 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L 5 TYP. M 0.70 RE

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SD1898 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR High Breakdown Voltage and Current Excellent DC Current Gain Linearity 3. EMITTER Complement the 2SB1260 Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol P

2SD1898 TRANSISTOR (NPN)SOT-89-3L FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR Complement the 2SB1260 Low Collector-Emitter Saturation Voltage 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VE

2SD1898Epitaxial Planar NPN TransistorsSOT-89121. BASE32. COLLECTOR3. EMITTERC(Ta=25 )ABSOLUTE MAXIMUM RATINGSRating SymbolLimits UnitVdcCollector-Base VoltageV 100CBOVdcCollector-Emitter Voltage 80VCEOVdcEmitter-Base Voltage 5VEBOIC A(DC)1Collector CurrentICP 2 A (Pulse)*PC 0.5 WCollector Power DissipationT , TstgCJunction Tempera

WILLAS2SD1898 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (NPN) SOT-89 FEATURES High Breakdown Voltage and Current 1. BASE Excellent DC Current Gain Linearity 2. COLLECTOR 3. EMITTER Low Collector-Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25 unless otherwise noted) Pb-Free package is available Symbol Parameter Value UnitRoHS product for pack

SMD Type TransistorsNPN Transistors2SD18981.70 0.1 Features High VCEO, VCEO=80V High IC, IC=1A (DC) Low VCE (sat)0.42 0.10.46 0.1 Complementary to 2SB12601.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 120 Collector - Emitter Voltage VCEO 80 V Emitter - Base Voltage