C1815Y - описание и поиск аналогов

 ..1. Size:470K  cn shikues
 c1815o c1815y c1815g c1815l.pdf 

 0.1. Size:141K  semtech
 mmbtsc1815o mmbtsc1815y mmbtsc1815g mmbtsc1815l.pdf 

MMBTSC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor MMBTSA1015 is recommended. TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO

 0.2. Size:138K  semtech
 2sc1815o 2sc1815y 2sc1815g 2sc1815l.pdf 

2SC1815 NPN Silicon Epitaxial Planar Transistor for switching and AF amplifier applications. The transistor is subdivided into four groups, O, Y, G and L, according to its DC current gain. As complementary type the PNP transistor 2SA1015 is recommended. On special request, these transistors can be 1. Emitter 2. Collector 3. Base manufactured in different pin configurations.

 9.1. Size:50K  philips
 2pc1815.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor Product specification 2004 Nov 05 Supersedes data of 1999 May 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter

 9.2. Size:47K  philips
 2pc1815 3.pdf 

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 2PC1815 NPN general purpose transistor 1999 May 28 Product specification Supersedes data of 1997 Mar 28 Philips Semiconductors Product specification NPN general purpose transistor 2PC1815 FEATURES PINNING Low current (max. 150 mA) PIN DESCRIPTION Low voltage (max. 50 V). 1 base 2 collector APPLICATIONS 3 emitter

 9.3. Size:213K  toshiba
 2sc1815-t.pdf 

 9.4. Size:272K  toshiba
 2sc1815.pdf 

 9.5. Size:272K  toshiba
 2sc1815-o 2sc1815-y 2sc1815-gr 2sc1815-bl.pdf 

 9.6. Size:308K  toshiba
 2sc1815l.pdf 

2SC1815(L) TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC1815(L) Audio Frequency Voltage Amplifier Applications Unit mm Low Noise Amplifier Applications High breakdown voltage, high current capability V = 50 V (min), I = 150 mA (max) CEO C Excellent linearity of h FE hFE (2) = 100 (typ.) at VCE = 6 V, IC = 150 mA h (I = 0.1 mA)/h (I = 2 mA)

 9.7. Size:44K  fairchild semi
 ksc1815.pdf 

KSC1815 Audio Frequency Amplifier & High Frequency OSC Complement to KSA1015 Collector-Base Voltage VCBO= 50V TO-92 1 1. Emitter 2. Collector 3. Base NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC

 9.8. Size:368K  mcc
 2sc1815-bl-gr-o-y.pdf 

2SC1815-O MCC 2SC1815-Y Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SC1815-GR CA 91311 Phone (818) 701-4933 2SC1815-BL Fax (818) 701-4939 Features 2SC1815 is NPN Silicon Epitaxial Transistor Designed for RF, AF NPN Silicon Amplifier and General Purpose Applications. Capable of 0.4Watts of Power Dissipation. Epitaxial

 9.9. Size:257K  onsemi
 ksc1815.pdf 

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.10. Size:235K  utc
 2sc1815.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SC1815 NPN SILICON TRANSISTOR AUDIO FREQUENCY AMPLIFIER HIGH FREQUENCY OSC NPN TRANSISTOR FEATURES * Collector-Emitter voltage BV =50V CEO * Collector current up to 150mA * High h linearity FE * Complimentary to UTC 2SA1015 SYMBOL ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen

 9.11. Size:393K  secos
 c1815t.pdf 

C1815T 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURE G H Power Dissipation Emitter CLASSIFICATION OF hFE (1) J Collector Base A D Product-Rank C1815T-O C1815T-Y C1815T-GR Millimeter REF. B Min. Max. Range 70 140 120 240 200 400 A 4.40

 9.12. Size:174K  secos
 c1815.pdf 

C1815 200 mW, 150 mA, 60 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURE A L Power Dissipation 3 3 Top View C B 1 1 2 2 K E Collector MARKING HF 3 D H J F G 1 Base Millimeter Millimeter REF. REF. Min. Max. Min. Max. A 2.70 3.04 G - 0.18 2 B

 9.13. Size:247K  cdil
 csc1815.pdf 

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL PLANAR SILICON TRANSISTOR CSC1815 TO-92 Plastic Package B C E Audio Frequency General Purpose and Driver Stage Amplifier Applications. Complementary CSA1015 ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL VALUE UNITS VCBO Collector Base Voltage

 9.14. Size:186K  jiangsu
 2sc1815.pdf 

2S Equivalent Circuit

 9.15. Size:1579K  jiangsu
 c1815.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encap sulate Transistors * SOT-23 C1815 TRANSI STOR (NPN) FEATURES 1. BASE Power dissipation 2. EMITTER 3. COLLECTOR MARKING HF MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO VCEO Collector-Emitt

 9.16. Size:803K  kec
 ktc1815.pdf 

SEMICONDUCTOR KTC1815 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES Excellent hFE Linearity hFE(2)=100(Typ.) at VCE=6V, IC=150mA hFE(IC=0.1mA)/hFE(IC=2mA)=0.95(Typ.). Low Noise NF=1dB(Typ.). at f=1kHz. Complementary to KTA1015. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING UNIT VCBO Collector-Base

 9.17. Size:168K  microelectronics
 2sc1815-m.pdf 

 9.18. Size:1213K  htsemi
 2sc1815.pdf 

2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW

 9.19. Size:830K  htsemi
 c1815.pdf 

C1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation 1. BASE MARKING C1815=HF 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj

 9.20. Size:1131K  lge
 2sc1815.pdf 

2SC1815 Silicon Epitaxial Planar Transistor FEATURES A High voltage and high current SOT-23 Dim Min Max VCEO=50V(Min),IC=150mA(Max). A 2.70 3.10 E Excellent hFE linearity hFE(2)=100 (Typ) at VCE=6V,IC=150mA B 1.10 1.50 K B hFE(IC=0.1mA) / hFE(IC=2mA=0.95(Typ)) C 1.0 Typical D 0.4 Typical Low noise. E 0.35 0.48 J D Complementary to 2SA1015. G 1.80 2.00 APPLIC

 9.21. Size:180K  lge
 c1815 to-92.pdf 

C1815 Transistor(NPN) TO-92 1.EMITTER 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage Dimensions in inches and (millimeters) IC Collector Current -Continuous 150 mA PC Collector Power Dissi

 9.22. Size:218K  lge
 c1815 sot-23.pdf 

C1815 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Power dissipation MARKING C1815=HF Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150

 9.23. Size:291K  wietron
 c1815.pdf 

C1815 NPN Plastic-Encapsulate Transistors P b Lead(Pb)-Free TO 92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO 60 V Collector-Base Voltage 1 2 3 VCEO 50 V Collector-Emitter Voltage VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 150 mA PD Total D

 9.24. Size:230K  wietron
 c1815lt1.pdf 

C1815LT1 C1815LT1 TRANSISTOR (NPN) SOT-23 * G Lead(Pb)-Free 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation PCM 0.2 W (Tamb=25 ) 2. 4 Collector current 1. 3 ICM 0.15 A Collector-base voltage V(BR)CBO 60 V Operating and storage junction temperature range TJ, Tstg -55 to +150 Unit mm ELECTRICAL CHARACTERISTICS (Tamb=25 unless other

 9.25. Size:477K  willas
 c1815.pdf 

FM120-M WILLAS THRU 1 15 SOT-23 Plastic-Encap sulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Prod Package outline Features Batch process design, excellent power dissipation offers better rev SOD-123H SOT-23 TRANSISTOR (NPN) lerse leakage current and thermal resistance. Low profi e surface mounted appl

 9.26. Size:46K  hsmc
 hsc1815.pdf 

Spec. No. HE6523 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/4 HSC1815 NPN Epitaxial Planar Transistor Description The HSC1815 is designed for use in driver stage of AF amplifier general purpose amplification. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.........................................

 9.27. Size:544K  shenzhen
 2sc1815.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING 2SC1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base

 9.28. Size:849K  shenzhen
 c1815.pdf 

Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) TO 92 FEATURES 1.EMITTER Power dissipation 2.COLLECTOR MAXIMUM RATINGS* TA=25 unless otherwise noted 3.BASE Symbol Parameter Value Units VCBO -60 V Collector-Base Voltage 1 2 3 VCEO -50 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage

 9.29. Size:284K  can-sheng
 c1815 sot-23.pdf 

ShenZhen CanSheng Industry Development Co.,Ltd. www.szcansheng.com SOT-23 Plastic-Encapsulate Transistors C1815 TRANSISTOR (NPN) FEATURES Power dissipation MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

 9.30. Size:433K  can-sheng
 c1815.pdf 

SOT-23 Plastic Encapsulate Transistors SOT- FEATURES 23 Power dissipation MARKING MARKING MARKING C1815=HF MARKING 1 BASE 2 EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 3 COLLECTO Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units Symbol Parameter Value Units

 9.31. Size:853K  blue-rocket-elect
 2sc1815.pdf 

2SC1815 Rev.E Nov.-2015 DATA SHEET / Descriptions TO-92 NPN Silicon NPN transistor in a TO-92 Plastic Package. / Features , , h , , 2SA1015 FE High voltage and high current, excellent hFE linearity ,low noise ,complementary pair with 2SA1015. / Applications

 9.32. Size:887K  blue-rocket-elect
 2sc1815m.pdf 

2SC1815M Rev.F Apr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features , , h , FE High voltage and high current, excellent hFE linearity ,low noise. / Applications , A

 9.33. Size:268K  first silicon
 ftc1815.pdf 

SEMICONDUCTOR FTC1815 TECHNICAL DATA FEATURES B C General Purpose NPN Transistor DIM MILLIMETERS A 4.70 MAX E MAXIMUM RATINGS (TA=25 unless otherwise noted) B 4.80 MAX G C 3.70 MAX D D 0.55 MAX Symbol Parameter Value Units E 1.00 F 1.27 VCBO Collector-Base Voltage 60 V G 0.85 H 0.45 _ VCEO Collector-Emitter Voltage 50 V H J 14.00 + 0.50 L 2.30 F F VEBO Emitter-Ba

 9.34. Size:945K  kexin
 2sc1815.pdf 

SMD Type or SMD Type TransistICs NPN Transistors 2SC1815 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features 1 2 Power dissipation +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO 60 V Collector to Emitter Voltage VCEO 50 V Emitter to Base Voltage VE

 9.35. Size:467K  feihonltd
 c1815bf.pdf 

TRANSISTOR C1815BF MAIN CHARACTERISTICS FEATURES IC 100mA Epitaxial silicon VCEO 55V High switching speed VCBO 70V 2SA1015 Complementary to 2SA1015 PC 400mW RoHS RoHS product APPLICATIONS High frequency switch power supply Commonly power amplifier

 9.36. Size:122K  hfzt
 2sc1815lt1.pdf 

2SC1815LT1 NPN EPITAXIAL SILICON TRANSISTOR Package SOT-23 * Complement to 2SA1015 * Collector Current Ic=150mA ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating Unit Collector-Base Voltage Vcbo 60 V Collector-Emitter Voltage Vceo 50 V Emitter-Base Voltage Vebo 5 V PIN 1 2 3 Collector Current Ic 150 mA STYLE Collector Dissipation Ta=25 * PD 225 mW NO

 9.37. Size:774K  slkor
 2sc1815o 2sc1815q 2sc1815gr 2sc1815bl.pdf 

2SC1815 Equivalent Circuit Collector-Base Voltage 60 V Collector-Emitter Voltage 50 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.15 A Collector Power D

 9.38. Size:1627K  slkor
 c1815.pdf 

C1815 TRANSISTOR NPN TRANSISTOR NPN 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO VC Collector-Emitter Voltage 50 V EO V Emitter-Base Voltage 5 V EBO I Collector Current 150 mA C P Collector Power Dissipation 200 mW

 9.39. Size:521K  slkor
 2sc2078b 2sc1815c 2sc1815d 2sc1815e.pdf 

2SC2078 Silicon NPN POWER TRANSISTOR DESCRIPTION B F SEATING T PLANE C 4 Designed primarily for SSB linear power T S amplifier applications A Q 1 2 3 H FEATURES U K Z Specified 12.5V, 27MHz Characteristics L PO = 4W PEP V ft = 200 MHz STYLE 1 R G PIN 1. BASE 2. COLLECTOR J D 3. EMITTER N 4. COLLECTOR DIMENSIONS UNIT A B C D F G H J K L N Q R

 9.40. Size:95K  sunroc
 c1815.pdf 

SUNROC SOT-23 C1815 TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE 2. EMITTER MARKING C1815=HF 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200

 9.41. Size:619K  fuxinsemi
 c1815.pdf 

 9.42. Size:837K  jsmsemi
 c1815.pdf 

C1815 Silicon Epitaxial Planar Transistor FEATURES High voltage and high current V =50V(Min),I =150mA(Max) CEO C Excellent h linearity h =100 (Typ) at V =6V,I =150mA FE FE(2) CE C h (I =0.1mA) / h (I =2mA=0.95(Typ)) FE C FE C Low noise Complementary to 2SA1015 APPLICATIONS SOT-23 Audio frequency general purpose amplifier applications. MAXIMUM RATIN

 9.43. Size:604K  mdd
 2sc1815.pdf 

2SC1815 SOT-23 Plastic-Encapsulate Transistors 2SC1815 TRANSISTOR (NPN) SOT-23 FEATURES Power dissipation MARKING 2SC1815=HF 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector to Base Voltage 60 V CBO V Collector to Emitter Voltage 50 V CEO VEBO Emitter to Base Voltage 5 V IC Collector Current

 9.44. Size:4258K  msksemi
 2sc1815-ms.pdf 

www.msksemi.com 2SC1815-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES Power dissipation 1. BASE MARKING HF 2. EMITTER SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBO VCEO Collector-Emitter Voltage 50 V V Emitter-Base Voltage 5 V EBO I Collector Cur

 9.45. Size:920K  cn yongyutai
 2sc1815.pdf 

2SC1815 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR (NPN) FEATURES MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 60 V VCEO Collector-Emitter Voltage - 50 V VEBO Emitter-Base Volta

 9.46. Size:1732K  cn twgmc
 2sc1815.pdf 

2SC1815 2 SC1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1 BASE 2 EMITTER 3 COLLECTOR MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW T

 9.47. Size:474K  cn cbi
 c1815.pdf 

C1815 TRANSISTOR (NPN) FEATURE SOT-23 Power dissipation 1 BASE 2 EMITTER 3 COLLECTOR MARKING HF MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissipation 200 mW Tj Junc

 9.48. Size:2041K  cn goodwork
 2sc1815.pdf 

2SC1815 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 200mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=50V. Collector current IC=0.15A. ansition frequency fT>80MHz @ Tr IC=1mAdc, VCE=10Vdc, f=30MHz. In compliance with EU RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals Solde

 9.49. Size:1084K  cn hottech
 2sc1815.pdf 

2SC1815 BIPOLAR TRANSISTOR (NPN) FEATURES High current And High voltage Excellent h Linearity FE Low Noise Surface Mount device Complementary to 2SA1015 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise no

 9.50. Size:175K  inchange semiconductor
 2sc1815.pdf 

INCHANGE Semiconductor isc Silicon NPN Transistor 2SC1815 DESCRIPTION High Voltage and High Current Vceo=50V(Min. Ic=150mA(Max) Excellent hFE Linearity Low Noise Complement to Type 2SA1015(O,Y,GR class) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver sta