D882S-E datasheet и подбор замены

 ..1. Size:1508K  cn shikues
 d882s-r d882s-q d882s-p d882s-e.pdf 

D882S NPN Silicon Power Transistor SOT-23 The transistor is subdivided into four groups, R, Q, P and E, according to its DC current gain. 1 BASE 2 EMITTER 3 COLLECTOR O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 5 V Collector Current IC 3 A

 9.1. Size:175K  utc
 d882ss.pdf 

UNISONIC TECHNOLOGIES CO., LTD D882SS NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR FEATURES * High Current Output up to 3A * Low Saturation Voltage * Complement to B772SS APPLICATIONS * Audio Power Amplifier * DC-DC Convertor * Voltage Regulator ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 D882SSG-x-AE3-R SOT-2

 9.2. Size:184K  utc
 2sd882s.pdf 

UNISONIC TECHNOLOGIES CO., LTD 2SD882S NPN SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR 1 1 FEATURES SOT-223 SOT-89 * High current output up to 3A * Low saturation voltage * Complement to 2SB772S APPLICATIONS 1 * Audio power amplifier TO-92 * DC-DC convertor * Voltage regulator ORDERING INFORMATION Order Number Pin Assignment Package Packing

 9.3. Size:209K  secos
 d882s.pdf 

D882S NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Power Dissipation G H J Millimeter REF. A D Min. Max. CLASSIFICATION OF hFE A 4.40 4.70 B B 4.30 4.70 C 12.70 - K D 3.30 3.81 E 0.36 0.56 Rank R 0 Y GR F 0.36 0.51 E C F G 1.27 TYP. 60-120 160-320 200-

 9.4. Size:244K  taiwansemi
 tsd882s.pdf 

TSD882S Low Vcesat NPN Transistor TO-92 SOT-89 Pin Definition Pin Definition PRODUCT SUMMARY 1. Base 1. Emitter BVCBO 60V 2. Collector 2. Collector 3. Emitter 3. Base BVCEO 50V IC 3A VCE(SAT) 0.5V @ IC / IB = 2A / 200mA Features Ordering Information Low VCE(SAT) 0.25 @ IC / IB = 2A / 200mA (Typ.) Part No. Package Packing Complementary part with TSB

 9.5. Size:202K  jiangsu
 d882s.pdf 

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN) FEATURES 1.EMITTER Power dissipation 2.COLLECTOR 3.BASE Equivalent Circuit 1

 9.6. Size:206K  lge
 d882s.pdf 

D882S Transistor(NPN) 1.EMITTER TO-92 2.COLLECTOR 3.BASE Features Power dissipation MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 3 A Dimensions in inches and (millimeters) PC Collector Power Dissipati

 9.7. Size:55K  hsmc
 hsd882s.pdf 

Spec. No. HE6544 HI-SINCERITY Issued Date 1992.11.25 Revised Date 2006.07.28 MICROELECTRONICS CORP. Page No. 1/5 HSD882S NPN Epitaxial Planar Transistor Description The HSD882S is suited for the output stage of 0.75W audio, voltage regulator, and relay driver. TO-92 Absolute Maximum Ratings Maximum Temperatures Storage Temperature.......................................

 9.8. Size:249K  cystek
 btd882st3.pdf 

Spec. No. C858T3 Issued Date 2011.06.28 CYStech Electronics Corp. Revised Date Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 30V IC 3A BTD882ST3 RCESAT(typ) 150m Features Low VCE(sat), 0.3V typ. at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772ST3 Pb-free lead plating package Symbol Outline

 9.9. Size:302K  cystek
 btd882sa3.pdf 

Spec. No. C848A3-H Issued Date 2003.05.31 CYStech Electronics Corp. Revised Date 2013.03.21 Page No. 1/7 Low Vcesat NPN Epitaxial Planar Transistor BVCEO 50V IC 3A BTD882SA3 RCESAT (Typ) 125m Features Low VCE(sat), typically 0.25V at IC / IB = 2A / 0.2A Excellent current gain characteristics Complementary to BTB772SA3 Pb-free lead plating and h

 9.10. Size:26K  shantou-huashan
 hd882s.pdf 

 9.11. Size:230K  pjsemi
 2sd882sq-r 2sd882sq-q 2sd882sq-p 2sd882sq-e.pdf 

2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ Applications PIN1 Base PIN 2 Collector PIN 3 Emitter These devices are intended for use in audio frequency power amplifier and low speed switching applications 2C 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S

 9.12. Size:1081K  cn juxing
 2sd882sq.pdf 

2SD882SQ Silicon NPN Power Transistor Features. High current output up to 3A Low saturation voltage Complement to 2SB772SQ PIN1 Base PIN 2 Collector PIN 3 Emitter Applications 2C These devices are intended for use in audio frequency power amplifier and low speed switching applications 1B 3E Absolute Maximum Ratings (Ta=25 unless otherwise specified) Parameter S