2SA1250 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SA1250 DESCRIPTION With TO-66 package Excellent safe operating area High breadown voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= )

isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Low Collector Saturatioin Voltage- V = -1.0V(Max.)@ I = -5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit mm High voltage VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V

Ordering number EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators, converters, and IF amplifiers. 2018B [2SA1256] Features High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ). 1 Base 2 Emitter 3 Collecto

Ordering number ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2033A [2SA1253/2SC3135] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SA1253 3 Base 3.0 3.8 SANYO SPA Specifications Absolut

Ordering number ENN1057C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions Very small-sized package permitting the 2SA1257/ unit mm 2SC3143-applied sets to be made small and slim. 2018B High breakdown voltage (VCEO 160V). [2SA1257/2SC3143] Small output capac

Ordering number ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2018B [2SA1252/2SC3134] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Base 2 Emitter ( ) 2SA1252 3 Collector SANYO CP Specifications Absolute Maxim

Ordering number ENN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features Package Dimensions High fT. unit mm High switching speed. 2010C Wide ASO. [2SA1259/2SC3145] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 1 2 3 2 Collector ( ) 2SA1259 3 Emitter 2.55 2.55 SANYO TO-220AB Sp

Ordering number ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions High fT. unit mm High switching speed. 2010C Wide ASO. [2SA1258/2SC3144] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 1 2 3 2 Collector ( ) 2SA1258 3 Emitter 2.55 2.55 SANYO TO-220AB Spe

Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2206 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 A

Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2206 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 A

SMD Type or SMD Type TransistICs PNP Transistors 2SA1256 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High fT (230MHz typ), and small Cre (1.1pF typ). 1 2 Small NF (2.5dB typ). +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter

SMD Type Transistors PNP Transistors 2SA1257 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High breakdown voltage. Small output capacitance. 1 2 Very small-sized package permitting the 2SA1257/ +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 2SC3143-applied sets to be made small and slim. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter

SMD Type or SMD Type TransistICs PNP Transistors 2SA1252 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High VEBO. 1 2 Wide ASO and high durability against breakdown. +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC3134 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60

isc Silicon PNP Darlington Power Transistor 2SA1259 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -2.5A FE C Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -2.5A CE(sat) C Complement to Type 2SC3145 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier high f and high