Биполярный транзистор KTA1663Y - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTA1663Y
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.8 W
Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 200 MHz
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT89
KTA1663Y Datasheet (PDF)
kta1663o kta1663y.pdf
KTA1663PNP-Silicon General use Transistors0.8W 1.5A25V 4 ApplicationsCan be used for switching and amplifying in various 2 1 3SOT-89 electrical and electronic circuit. Maximum ratings Parameters Symbol Rating UnitV VCEO 25Collector-emitter voltage (IB=0) VCBO 30 VCollector-base voltageIE=0 VEBO 6 VEmitter-base voltageIC=0 IC 1.5 ACol
kta1663.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L KTA1663 TRANSISTOR (PNP) 1. BASE FEATURES High current applications 2. COLLECTOR Complementary to KTC4375 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage
kta1663.pdf
SEMICONDUCTOR KTA1663TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATURESAC1W (Mounted on Ceramic Substrate).HSmall Flat Package. GComplementary to KTC4375.DIM MILLIMETERSA 4.70 MAXD _+D B 2.50 0.20K C 1.70 MAXD 0.45+0.15/-0.10MAXIMUM RATING (Ta=25)F FE 4.25 MAX_+F 1.50 0.10CHARACTERISTIC SYMBOL RATING UNITG
kta1663.pdf
KTA1663TRANSISTOR (PNP) SOT-89 FEATURES High current applications 1. BASE Complementary to KTC4375 2. COLLECTOR 1 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Coll
kta1663 sot-89.pdf
KTA1663 SOT-89 Transistor(PNP)1. BASE 2. COLLECTOR SOT-891 4.62 B4.41.63. EMITTER 1.81.43 1.4Features2.64.252.43.75 High current applications 0.8MIN Complementary to KTC4375 0.530.400.480.442x)0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Valu
kta1663.pdf
KTA1663PNP Epitaxial Planar TransistorsP b Lead(Pb)-Free1. BASE2. COLLECTOR13. EMITTER23SOT-89ABSOLUTE MAXIMUM RATINGS (TA=25C)Rating Symbol Limits UnitVCBO VCollector-Base Voltage-35VCEOVCollector-Emitter Voltage -30VEBOVEmitter-Base Voltage -5.0Collector CurrentIC A-1.5Collector Power Dissipation PD 0.5 WTjJunction Temperature -55 to +150
kta1663.pdf
SMD Type TransistorsPNP TransistorsKTA16631.70 0.1 Features 1W (Mounted on Ceramic Substrate) Small Flat Package Comlementary to KTC43750.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Voltage VCEO -30 V Emitter - Base Voltage VEBO -
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050