Биполярный транзистор KTC3875S-L - описание производителя. Основные параметры. Даташиты.
Наименование производителя: KTC3875S-L
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 50 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.15 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 80 MHz
Ёмкость коллекторного перехода (Cc): 2 pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT23
Аналоги (замена) для KTC3875S-L
KTC3875S-L Datasheet (PDF)
ktc3875s-o ktc3875s-q ktc3875s-g ktc3875s-l.pdf
KTC3875SNPN Silicon Epitaxial Planar Transistor For switching and AF amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain.1.Base 2.Emitter 3.Collector OSOT-23 Plastic PackageAbsolute Maximum Ratings (Ta = 25 C) Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 50 V Emitter
ktc3875s.pdf
SEMICONDUCTOR KTC3875STECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTORGENERAL PURPOSE APPLICATION.SWITCHING APPLICATION. EL B LFEATURESDIM MILLIMETERS_+A 2.93 0.20Excellent hFE LinearityB 1.30+0.20/-0.15: hFE(0.1mA)/hFE(2mA)=0.95(Typ.). C 1.30 MAX23 D 0.40+0.15/-0.05High hFE : hFE=70700.E 2.40+0.30/-0.201G 1.90Low Noise : NF=1dB(Typ.), 10dB(Max.).
ktc3875-gr-y.pdf
MCCMicro Commercial Components TMKTC3875-Y20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311KTC3875-GRPhone: (818) 701-4933Fax: (818) 701-4939Features High hFE and Low NoiseEpitaxial Planar Complementary to KTA1504 Lead Free Finish/Rohs Compliant ("P"Suffix designates NPN Transistors RoHS Compliant. See ordering information) Ha
ktc3875.pdf
KTC3875 0.15A , 60V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES High hFE AL Low noise 33 Complementary to KTA1504 Top ViewC B11 2CLASSIFICATION OF hFE 2K EProduct-Rank KTC3875-O KTC3875-Y KTC3875-GR KTC3875-BL DRange 70~140 120~240 200~400 350~
ktc3875.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE Low noise 2. EMITTER 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit V Collector-Base Voltage 60 V CBOV Collector-Emitter Voltage 50
ktc3875.pdf
KTC3875TRANSISTOR (NPN) SOT-23 FEATURES High hFE Low noise 1. BASE Complementary to KTA1504 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 150 mA PC Collector Power Dissip
ktc3875.pdf
KTC3875 SOT-23 Transistor(NPN)SOT-231. BASE 2. EMITTER 3. COLLECTOR FeaturesHigh hFE: hFE=70-700 Low noise : NF=1dB(Typ),10dB(Max) Complementary to KTA1504 Dimensions in inches and (millimeters)MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEBO Emitter-Base V
ktc3875.pdf
KTC3875COLLECTORPlastic-Encapsulate Transistors3NPN Silicon 1BASE2SOT-23EMITTER(Ta=25 C)MAXIMUM RATINGSRating Symbol ValueUnitCollector-Emitter Voltage VCEO 50 VdcCollector-Base Voltage VCBO60 VdcEmitter-Base Voltage VEBO5.0 VdcCollector Current -Continuous ICmAdc150THERMAL CHARACTERISTICSCharacteristics Symbol ValueUnit(1)Total Device Dissi
ktc3875.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 KTC3875 TRANSISTOR (NPN) FEATURES High hFE 1. BASE 2. EMITTER Low noise 3. COLLECTOR Complementary to KTA1504 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 60 VVCEO Collector-Emitter Voltage 50 VVEB
ktc3875.pdf
KTC3875 Rev.FApr.-2017 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Excellent hFE linearity, high hFE, low noise / Applications General amplifier and switching application.
ktc3875lt1.pdf
SEMICONDUCTOR KTC3875LT1 Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR General purpose application Package:SOT-23 * Complement to KTA1504LT1 * Collector Current :Ic=150mA * low noise:NF=10db(max) ABSOLUTE MAXIMUM RATINGS at Ta=25 Characteristic Symbol Rating UnitCollector-Base Voltage Vcbo 60 V Collector-Emitter Voltage
ktc3875.pdf
SMD Type TransistorsNPN TransistorsKTC3875SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High hFE Low noise1 2+0.1+0.05 Complementary to KTA1504 0.95 -0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage V
ktc3875.pdf
KTC3875BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to KTA1504 High hFE Low Noise Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Ba
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: 2N1993
History: 2N1993
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050