Биполярный транзистор PXT8550D - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PXT8550D
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.625 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 15 pf
Статический коэффициент передачи тока (hfe): 160
Корпус транзистора: SOT89
PXT8550D Datasheet (PDF)
pxt8550c pxt8550d.pdf
PXT8550PNP Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 40 VCollector Emitter Voltage -VCEO 25 VEmitter Base Voltage -VEBO 6 VCollector Current -IC 1.5 APower Dissipation Ptot
pxt8550c pxt8550d pxt8550d1 pxt8550d2.pdf
PXT8550PXT8550PXT8550 PXT8550 TRANSISTOR (PNP)SOT-89FEATURESCompliment to PXT8050 MARKING: Y21. BASE 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted)3. EMITTER Symbol Parameter Value UnitV Collector-Base Voltage -40 VCBOVCEO Collector-Emitter Voltage -25 VV Emitter-Base Voltage -5 VEBOI Collector Current -Continuous -1.5 ACP Collector Power
pxt8550-b-c-d-d3.pdf
M C CTMPXT8550-BMicro Commercial Components PXT8550-CMicro Commercial Components20736 Marilla Street ChatsworthPXT8550-DCA 91311Phone: (818) 701-4933PXT8550-D3Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability rating PNP Silicon Moisture Sensitivity Level 1 Marking:Y2/8550Plas
pxt8550.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT8550 TRANSISTOR (PNP) 1. BASE FEATURES Compliment to PXT8050 2. COLLECTOR MARKING: Y2 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Bas
pxt8550.pdf
PXT8 550TRANSISTOR(PNP) SOT-89 FEATURES 1. BASE Compliment to PXT8050 1 2. COLLECTOR MARKING: Y2 2 MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER 3 Symbol Parameter Value Units VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -25 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -1.5 A PC Collector Power Dissipati
pxt8550.pdf
PXT8550 SOT-89 Transistor(NPN)1. BASE SOT-892. COLLECTOR 1 4.6B4.42 1.61.83. EMITTER 1.41.43 2.64.25Features2.43.75 Compliment to PXT8050 0.8MIN0.530.400.480.442x)MARKING: Y2 0.13 B0.35 0.371.53.0MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO Colle
pxt8550.pdf
Production specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8550 FEATURES Commplimentray to PXT8050 PbLead-free SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8550 8550 SOT-89 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter ValueUnit Collector-Base Voltage VCBO -40 VCollector-Emitter Voltage VCEO -25 VEmitter-Base Vol
pxt8550.pdf
PXT8550BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to PXT8050 Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V -40 VCBOCollec
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