2SC3585C - описание и поиск аналогов

2SC3585 NPN 2SC3585 NPN SOT-23-3L VHF UHF CATV S21e 2 5.5dB @ VCE=6V IC=

DATA SHEET DATA SHEET SILICON TRANSISTOR 2SC3585 MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISOR DESCRIPTION PACKAGE DIMENSIONS The 2SC3585 is an NPN epitaxial silicon transistor designed for use in (Units mm) low-noise and small signal amplifiers from VHF band to UHF band. The 2SC3585 features excellent power gain with very low-noise figures. The 2.8 0.2 2SC3585 em

NEC's NPN SILICON HIGH NE680 FREQUENCY TRANSISTOR SERIES FEATURES HIGH GAIN BANDWIDTH PRODUCT fT = 10 GHz LOW NOISE FIGURE 1.7 dB at 2 GHz 2.6 dB at 4 GHz HIGH ASSOCIATED GAIN 12.5 dB at 2 GHz 8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE 00 (CHIP) 35 (MICRO-X) LOW CURRENT PERFORMANCE DESCRIPTION NEC's NE680 series of NPN epitaxial silicon transistors is designed for l

SMD Type Transistors NPN Transistors 2SC3585 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=35mA 1 2 Collector Emitter Voltage VCEO=10V +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

isc Silicon NPN RF Transistor 2SC3585 DESCRIPTION Collector Current I = 35mA C Collector-Emitter Breakdown Voltage- V = 10V(Min) (BR)CEO High gain 2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz) C Gain bandwidth product fT = 10 GHZ (typical) (I =10mA,f=1GH) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Design