2SC3585NPN2SC3585 NPN SOT-23-3L VHFUHF CATV :S21e2 5.5dB @ VCE=6VIC=

DATA SHEETDATA SHEETSILICON TRANSISTOR2SC3585MICROWAVE LOW NOISE AMPLIFIERNPN SILICON EPITAXIAL TRANSISORDESCRIPTIONPACKAGE DIMENSIONSThe 2SC3585 is an NPN epitaxial silicon transistor designed for use in(Units: mm)low-noise and small signal amplifiers from VHF band to UHF band. The2SC3585 features excellent power gain with very low-noise figures. The2.80.22SC3585 em

NEC's NPN SILICON HIGH NE680FREQUENCY TRANSISTOR SERIESFEATURES HIGH GAIN BANDWIDTH PRODUCT: fT = 10 GHz LOW NOISE FIGURE:1.7 dB at 2 GHz2.6 dB at 4 GHz HIGH ASSOCIATED GAIN:12.5 dB at 2 GHz8.0 dB at 4 GHz EXCELLENT LOW VOLTAGE00 (CHIP) 35 (MICRO-X)LOW CURRENT PERFORMANCEDESCRIPTIONNEC's NE680 series of NPN epitaxial silicon transistors isdesigned for l

SMD Type TransistorsNPN Transistors2SC3585SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=35mA1 2 Collector Emitter Voltage VCEO=10V+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 20 Collect

isc Silicon NPN RF Transistor 2SC3585DESCRIPTIONCollector Current I = 35mACCollector-Emitter Breakdown Voltage-: V = 10V(Min)(BR)CEOHigh gain:2 S21e = 5.5 dB (typical) ( I =5mA,f=2GHz)CGain bandwidth productfT = 10 GHZ (typical) (I =10mA,f=1GH)CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesign