2SD1624-R - Даташиты. Аналоги. Основные параметры

2SD1624 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 50 V Emitter - Base Volta

Ordering number 2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038 [2SB1124/2SD1624] Features Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast switching speed.

Ordering number ENN2019A PNP/NPN Epitaxial Planar Silicon Transistors 2SB1124/2SD1624 High Current Switching Applications Applications Package Dimensions Voltage regulators, relay drivers, lamp drivers, unit mm electrical equipment. 2038A [2SB1124/2SD1624] Features 4.5 1.5 1.6 Adoption of FBET, MBIT processes. Low collector-to-emitter saturation voltage. Fast swi

Ordering number EN2019B 2SB1124/2SD1624 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 50V, 3A, Low VCE sat , PNP NPN Single PCP Applications Voltage regulators, relay drivers, lamp drivers, electrical equipment Features Adoption of FBET, MBIT processes Low collector-to-emitter saturation voltage Fast switching speed Large current capacity and wide

SMD Type Transistors NPN Transistors 2SD1624 Features 1.70 0.1 Low collector-to-emitter saturation voltage. Large current capacity and wide ASO. Fast switching speed. Complementary to 2SB1124 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Em

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SD1624 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 50V (Min) (BR)CEO Fast switching speed 100% tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for L Amp Electronic Governor applications. F ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER