Биполярный транзистор 2SD1781R - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SD1781R
Маркировка: AFR
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.8 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 150(typ) MHz
Ёмкость коллекторного перехода (Cc): 10 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: SOT23
2SD1781R Datasheet (PDF)
2sd1781q 2sd1781r.pdf
2SD1781Plastic-Encapsulate TransistorsSOT-23 (NPN) FEATURES Very low VCE(sat). VCE(sat)
2sd1781k.pdf
2SD1781KDatasheetMedium Power Transistor (32V, 800mA)lOutlinelParameter Value SMT3VCEO32VIC800mASOT-346SC-59 lFeaturesl1)Very low VCE(sat).lInner circuitl VCE(sat)=0.1V(Typ.)(IC/IB=500mA/50mA)2)Higt current capacity in compact package.3)Complements the 2SB1197K.lApplicationl
2sd1781kfra.pdf
2SD1781KFRA2SD1781KTransistorsAEC-Q101 QualifiedMedium Power Transistor (32V, 0.8A) 2SD1781K2SD1781KFRA External dimensions (Unit : mm) Features1) Very Low VCE(sat).2.90.2VCE(sat) = 0.1V(Typ.) 1.1+0.21.90.2 -0.1 IC / IB= 500 A / 50mA 0.80.10.95 0.952) High current capacity in compact package.(1) (2)0~0.13) Complements the 2SB1197K2SB1197K.(3)+0
2sd1781.pdf
2SD1781 0.8A, 40V NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Very low VCE(sat).VCE(sat)
2sd1781k sot-23-3l.pdf
2SD1781K SOT-23-3L Transistor(NPN)SOT-23-3L1. BASE 2. EMITTER 2.920.353. COLLECTOR 1.17Features2.80 1.60 Low voltage High saturation current capability 0.151.90MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters)Symbol Parameter Value UnitsVCBO 40 VCollector-Base Voltage VCEO Collector-Emitter Voltage 32 V VEBO Emit
l2sd1781kqlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G SeriesS-L2SD1781KQLT1G Series(32V, 0.8A)L2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)(IC / IB = 500mA / 50mA)12) High current capacity in compact2package.3) Complements the L2SB1197KXLT1G SOT-23 /TO-236AB4)We declare that the material of product compliance with RoHS requireme
l2sd1781krlt1g.pdf
LESHAN RADIO COMPANY, LTD.Medium Power TransistorL2SD1781KQLT1G Series(32V, 0.8A)S-L2SD1781KQLT1G SeriesL2SD1781KQLT1GFFeatures31) Very low VCE(sat).VCE(sat) t 0.4 V (Typ.)1(IC / IB = 500mA / 50mA)2) High current capacity in compact2package.SOT-23 /TO-236AB3) Complements the L2SB1197KXLT1G4)We declare that the material of product compliance with RoHS requirem
2sd1781.pdf
SMD Type TransistorsNPN Transistors2SD1781 (2SD1781K)SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.1 Features 3 Very Low VCE(sat). High current capacity in compact package. Complimentary to 2SB1197(2SB1197K) 1 2+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit C
2sd1781kgp.pdf
CHENMKO ENTERPRISE CO.,LTD2SD1781KGPSURFACE MOUNTNPN Switching Transistor VOLTAGE 32 Volts CURRENT 0.8 AmpereAPPLICATION* Telephone and proferssional communction equipment.* Other switching applications.FEATURESOT-23* Small surface mounting type. (SOT-23)* Corrector peak current (Max.=1500mA). * Suitable for high packing density.* Low voltage (Max.=32V) .* High satur
2sd1781k-q 2sd1781k-r.pdf
2SD1781KSilicon Epitaxial Planar Transistor FEATURES High Collector Current.(IC= 500mA Complementary To 2SB1197KExcellent HFE Linearity. High total power dissipation.(PC=300mW) APPLICATIONS High Collector Current. MAXIMUM RATING @ Ta=25 unless otherwise specified CLASSIFICATION OF hFE(1) REV.08 1 of 42SD1781KELECTRICAL CHARACTERISTICS @ Ta=25 unle
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D209L , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050