858AW - Даташиты. Аналоги. Основные параметры

BC856W-BC858W Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80 VCBO V BC857W -50 BC858W -30 Collector-Emitter Voltage BC8

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by BC856AWT1/D General Purpose Transistors BC856AWT1,BWT1 PNP Silicon BC857AWT1,BWT1 COLLECTOR BC858AWT1,BWT1, These transistors are designed for general purpose amplifier 3 applications. They are housed in the SOT 323/SC 70 which is CWT1 designed for low power surface mount applications. 1 Motorola Preferred Devices B

BC856AW THRU BC858CW Features Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS General Purpose Compliant. See Ordering Information) Transistors Maximum Ratings @ 25 C Unless Otherwise Specified Operating Junction Tempera

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

BC856BWT1 Series, BC857BWT1 Series, BC858AWT1 Series General Purpose Transistors http //onsemi.com PNP Silicon COLLECTOR 3 These transistors are designed for general purpose amplifier applications. They are housed in the SC--70/SOT--323 which is designed for low power surface mount applications. 1 BASE Features These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 2

BC856B, BC857B, BC858A General Purpose Transistors PNP Silicon These transistors are designed for general purpose amplifier www.onsemi.com applications. They are housed in the SC-70/SOT-323 which is designed for low power surface mount applications. COLLECTOR 3 Features S and NSV Prefix for Automotive and Other Applications Requiring 1 Unique Site and Control Change Requirement

BC856AW, BW BC857AW, BW, CW Elektronische Bauelemente BC858AW, BW, CW RoHS Compliant Product FEATURES * Ideally suited for automatic insertion * For Switching and AF Amplifier Applications SOT-323 O O * Operating Temp. -55 C +150 C Dim Min Max A A 1.800 2.200 L B 1.150 1.350 C OLLE C TOR 3 C 0.800 1.000 S Top View 3 B 12 D 0.300 0.400 G 1.200 1.400 1 V G H 0.000 0.

BC856AW,BW BC857AW,BW,CW BC858AW,BW,CW STO-323 Transistor(PNP) 1. BASE 2. EMITTER SOT-323 3. COLLECTOR Features Ideally suited for automatic insertion For Switching and AF Amplifier Applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage BC856W -80 VCBO V BC857W -50 Dimensions in inches and (millimeters)

BC856AW/BW BC857AW/BW BC858AW/BW/CW COLLECTOR General Purpose Transistor 3 3 PNP Silicon 1 1 P b Lead(Pb)-Free BASE 2 2 EMITTER SOT-323(SC-70) MaximumRatings (TA=25 Cunless otherwise noted) Rating Symbol Value Unit Collector-Emitter Voltage BC856 -65 VCEO BC857 -45 V BC858 -30 Collector-Base Voltage BC856 -80 VCBO BC857 -50 V BC858 -30 Emitter-Base Voltage BC856 -5.0

LESHAN RADIO COMPANY, LTD. General Purpose Transistors LBC856AWT1G, BWT1G LBC857AWT1G, BWT1G PNP Silicon These transistors are designed for general purpose CWT1G amplifier applications. They are housed in the SOT 323/ LBC858AWT1G, BWT1G SC 70 which is designed for low power surface mount CWT1G applications. S-LBC856AWT1G, BWT1G Features We declare that the material of product

BC856AW BC859CW PNP GENERAL PURPOSE TRANSISTORS 30/45/65 Volts POWER 250 mWatts VOLTAGE FEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices BC846AW/BC847AW/BC848AW/ BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

Small Signal Transistor BC856AW-G Thru. BC858CW-G (PNP) RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications SOT-323 -Power dissipation PCM 0.15W (@TA=25 C) 0.087 (2.20) 0.079 (2.00) -Collector current 3 ICM -0.1A -Collector-base voltage 0.053(1.35) 0.045(1.15) VCBO BC856W= -80V BC857W= -50V 1 2 0.006 (0.15) BC85

RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-

RoHS RoHS COMPLIANT COMPLIANT BC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case SOT-323 Terminals Tin plated

RoHS RoHS COMPLIANT COMPLIANT BC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina