SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-

2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base vo

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE M