2SA1452P - описание и поиск аналогов

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -130 V CBO V Collector-

2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base vo

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1452 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SC3710 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SC3710 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE M