SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1943DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base V

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

2SA1943NBipolar Transistors Silicon PNP Triple-Diffused Type2SA1943N2SA1943N2SA1943N2SA1943N1. Applications1. Applications1. Applications1. Applications Power Amplifiers2. Features2. Features2. Features2. Features(1) High collector voltage: VCEO = -230 V (min)(2) Complementary to 2SC5200N(3) Recommended for 100-W high-fidelity audio frequency amplifier outpu

2SA1943 TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA1943 Power Amplifier Applications Unit: mm High collector voltage: VCEO = -230 V (min) Complementary to 2SC5200 Recommended for 100-W high-fidelity audio frequency amplifier output stage. Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO -230 VColl

January 20092SA1943/FJL4215PNP Epitaxial Silicon TransistorApplications High-Fidelity Audio Output Amplifier General Purpose Power Amplifier Features High Current Capability: IC = -17A. High Power Dissipation : 150watts. TO-2641 High Frequency : 30MHz.1.Base 2.Collector 3.Emitter High Voltage : VCEO= -250V Wide S.O.A for reliable operation. Ex

UNISONIC TECHNOLOGIES CO., LTD 2SA1943 PNP SILICON TRANSISTOR POWER AMPLIFIER APPLICATIONS FEATURES * Complementary to UTC 2SC5200 * Recommended for 100W High Fidelity Audio Frequency Amplifier Output Stage 1TO-3PL ORDERING INFORMATION Ordering Number Pin AssignmentPackage Packing Lead Free Halogen Free 1 2 32SA1943L-x-T3L-T 2SA1943G-x-T3L-T TO-3PL B C E Tube2SA

JMnic Product Specification Silicon PNP Power Transistors 2SA1943 DESCRIPTION With TO-3PL package Complement to type 2SC5200 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

PNP PNP Epitaxial Silicon Transistor R 2SA1943 SERIES APPLICATIONS Power Amplifier Applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEOV =250V (min) V =250V (min) CEO CEO 2SC5200 Complementary to 2SC5200 100W

RoHS 2SA1943BL Series RoHS SEMICONDUCTORNell High Power ProductsSilicon PNP triple diffusion planar transistor-15A/-230V/150W5.0020.000.2018.003.300.20TO-3PLFEATURESHigh breakdown voltage, VCEO = -230V (min) Complementary to 2SC5200BL0.603.20TO-3PL package which can be installed to the 5.450.05 5.450.05heat sink with one screw1 2 3 APPLICATIONSS

Silicon NPN transistorFeatures: Power Amplifier Applications Complementary to 2SC5200 High collector voltage:VCEO=230V (min) Recommended for 100-W high-fidelity audio frequencyamplifier Output stageNote: Using continuously under heavy loads (e.g. the applicationof high temperature/current/voltage and the significant change intemperature, etc.) may cause this produc

2SA1943T7TLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200APPLICATIONSPower amplifier applicationsRecommended for 100W high fidelity audio frequency amplifieroutput stageABSOLUTE MAXIMUM RATINGS(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -230 VCBOV Collector-

2SA1943Minos High Power ProductsPNP TRANSISTORSFeatures:Power Amplifier ApplicationsComplementaryto2SC5200Highcollector voltage:VCEO=-230V (min)Recommendedfor 100-Whigh-fidelity audiofrequency amplifierOutput stageNote: Using continuously under heavy loads (e.g. theapplicationof hightemperature/current/voltageandthe significant change intemperature, etc.) may causethis pro

isc Silicon PNP Power Transistor 2SA1943NDESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V = -230V(Min)(BR)CEOComplement to Type 2SC5200NMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency a

isc Silicon PNP Power Transistor 2SA1943DESCRIPTIONHigh Current CapabilityHigh Power DissipationHigh Collector-Emitter Breakdown Voltage-: V =- 230V(Min)(BR)CEOComplement to Type 2SC5200Minimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 100W high fidelity audio frequency amp