2SC3157L. Аналоги и основные параметры
Наименование производителя: 2SC3157L
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 60 W
Макcимально допустимое напряжение коллектор-база (Ucb): 150 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO220C
Аналоги (замена) для 2SC3157L
- подборⓘ биполярного транзистора по параметрам
2SC3157L даташит
..1. Size:177K cn sptech
2sc3157m 2sc3157l 2sc3157k.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency pow
7.1. Size:156K jmnic
2sc3157.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3157 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SA1261 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETE
7.2. Size:200K inchange semiconductor
2sc3157.pdf 
isc Silicon NPN Power Transistor 2SC3157 DESCRIPTION Low Collector Saturation Voltage- V = 0.6V(Max.)@I = 5A CE(sat) C Fast Switching Speed Complement to Type 2SA1261 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching
8.1. Size:102K sanyo
2sc3150.pdf 
Ordering number EN1069C NPN Triple Diffused Planar Silicon Transistor 2SC3150 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2010C Wide ASO. [2SC3150] 1 Base JEDEC TO-220AB 2 Collector EIAJ SC-46 3 Emitter Specifications Absolute Maximum Ratings at Ta = 25 C Parame
8.2. Size:97K sanyo
2sc3151.pdf 
Ordering number EN1070C NPN Triple Diffused Planar Silicon Transistor 2SC3151 800V/1.5A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3151] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Con
8.3. Size:102K sanyo
2sc3152.pdf 
Ordering number EN1071D NPN Triple Diffused Planar Silicon Transistor 2SC3152 800V/3A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3152] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
8.5. Size:97K sanyo
2sc3153.pdf 
Ordering number EN1072D NPN Triple Diffused Planar Silicon Transistor 2SC3153 800V/6A Switching Regulator Applications Features Package Dimensions High breakdown voltage (VCBO 900V). unit mm Fast switching speed. 2022A Wide ASO. [2SC3153] 1 Base 2 Collector 3 Emitter SANYO TO-3PB Specifications Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Condi
8.6. Size:221K jmnic
2sc3151.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3151 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/1.5A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symb
8.7. Size:222K jmnic
2sc3152.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3152 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/3A Switching Regulator Applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.8. Size:144K jmnic
2sc3158.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3158 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
8.9. Size:217K jmnic
2sc3153.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3153 DESCRIPTION With TO-3PN package High breakdown voltage (VCBO 900V) Fast switching speed Wide ASO Safe Operating Area APPLICATIONS 800V/6A switching regulator applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol
8.10. Size:142K jmnic
2sc3159.pdf 
JMnic Product Specification Silicon NPN Power Transistors 2SC3159 DESCRIPTION With TO-220F package High voltage High switching speed APPLICATIONS For switching regulator applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO
8.11. Size:346K lzg
2sc3150a.pdf 
2SC3150A(3DD3150A) NPN /SILICON NPN TRANSISTOR Purpose Switching regulator applications. Features High V , high speed switching, wide ASO. CEO /Absolute maximum ratings(Ta=25 ) Symbol Rating Unit V 1000 V CBO V 750 V
8.12. Size:174K cn sptech
2sc3150k 2sc3150l 2sc3150m.pdf 
SPTECH Product Specification SPTECH Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 900 V CBO V Collector-Emitter Voltage 800 V
8.13. Size:216K inchange semiconductor
2sc3150.pdf 
isc Silicon NPN Power Transistor 2SC3150 DESCRIPTION High Breakdown Voltage- V = 900V(Min) (BR)CBO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator Applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base
8.14. Size:202K inchange semiconductor
2sc3151.pdf 
isc Silicon NPN Power Transistor 2SC3151 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
8.15. Size:202K inchange semiconductor
2sc3152.pdf 
isc Silicon NPN Power Transistor 2SC3152 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
8.16. Size:199K inchange semiconductor
2sc3158.pdf 
isc Silicon NPN Power Transistor 2SC3158 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 3A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
8.17. Size:190K inchange semiconductor
2sc3156.pdf 
isc Silicon NPN Power Transistor 2SC3156 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAME
8.18. Size:202K inchange semiconductor
2sc3153.pdf 
isc Silicon NPN Power Transistor 2SC3153 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = 800V(Min) (BR)CEO Fast Switching Speed Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching regulator and high voltage switching applications High speed DC-DC converter applications. ABSOLUTE
8.19. Size:195K inchange semiconductor
2sc3159.pdf 
isc Silicon NPN Power Transistor 2SC3159 DESCRIPTION Low Collector Saturation Voltage- V = 1.0V(Max.)@I = 6A CE(sat) C Fast Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for switching regulator, DC-DC converter and high frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SY
Другие транзисторы: 2SA2198, 2SC2334K, 2SC2334L, 2SC2334M, 2SC2517K, 2SC2517L, 2SC2517M, 2SC3157K, TIP31, 2SC3157M, 2SC3181O, 2SC3181R, 2SC3834G, 2SC3834O, 2SC3834Y, 2SC3835G, 2SC3835O
