Биполярный транзистор 2SC5198O - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SC5198O
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 140 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 10 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 30(typ) MHz
Ёмкость коллекторного перехода (Cc): 170 pf
Статический коэффициент передачи тока (hfe): 80
Корпус транзистора: TO3PN
2SC5198O Datasheet (PDF)
2sc5198r 2sc5198o.pdf
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em
2sc5198r 2sc5198o.pdf
SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL
2sc5198.pdf
2SC5198 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5198 Power Amplifier Applications Unit: mm High breakdown voltage: VCEO = 140 V (min) Complementary to 2SA1941 Suitable for use in 70-W high fidelity audio amplifiers output stage Absolute Maximum Ratings (Ta = 25C) Characteristics Symbol Rating UnitCollector-base voltage VCBO 140 VCollector-em
2sc5198b.pdf
RoHS 2SC5198B Series RoHS SEMICONDUCTORNell High Power ProductsSilicon NPN triple diffusion planar transistor10A/140V/100W15.60.44.80.29.62.00.13.20,12TO-3P(B)3+0.2+0.20.651.05-0.1-0.1FEATURESHigh breakdown voltage, VCEO =140V (min) 5.450.1 5.450.11.4Complementary to 2SA1941BB C ETO-3P package which can be installed to the heat
2sc5198t7tl.pdf
2SC5198T7TLSilicon NPN Power TransistorDESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941APPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collect
2sc5198.pdf
2SC5198 Transistor Silicon NPN Epitaxial Type Power Amplifier Applications FEATURES * High collector voltage: Vceo=140V(min) * Recommended for 70W high-fidelity audio Frequency amplifier output * Complementary to 2SA1941 MAXIMUM RATINGS (Ta=25 ) Parameter Symbol Rating Unit Collector-Base Voltage VCBO 140 V Collector-Emitter Voltage VCEO 140 V Emitter-Base Voltage V
2sc5198.pdf
isc Silicon NPN Power Transistor 2SC5198DESCRIPTIONLow Collector Saturation Voltage-: V = 2.0V(Min) @I = 7ACE(sat) CGood Linearity of hFEComplement to Type 2SA1941Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 70W high fidelity audio frequencyamplifier output stage appli
Другие транзисторы... 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , 2SA1804R , 2SA1805 , 2SA1805O , 2SA1805R , D882P , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C , 2SA1811 , 2SA1815 , 2SA1815-3 , 2SA1815-4 .
