TIP31C-O. Аналоги и основные параметры
Наименование производителя: TIP31C-O
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 40 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 100 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 3 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 20
Корпус транзистора: TO220
Аналоги (замена) для TIP31C-O
- подборⓘ биполярного транзистора по параметрам
TIP31C-O даташит
..1. Size:136K st
tip31c-r tip31c-o tip31c-y.pdf 
TIP31C Power transistors General features New enhanced series High switching speed hFE improved linearity hFE Grouping 3 2 Applications 1 Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry s
8.1. Size:136K st
tip31c.pdf 
TIP31C Power transistors General features New enhanced series High switching speed hFE improved linearity hFE Grouping 3 2 Applications 1 Linear and switching industrial application TO-220 Description The TIP31C is a base island technology NPN power transistor in TO-220 plastic package with Internal schematic diagram better performances than the industry s
8.2. Size:67K st
tip31a tip31c tip32a tip32b tip32c.pdf 
TIP31A/31C TIP32A/32B/32C COMPLEMENTARY SILICON POWER TRANSISTORS APPLICATION LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The TIP31A and TIP31C are silicon Epitaxial-Base NPN transistors mounted in Jedec TO-220 plastic package. They are intented 3 for use in medium power linear and switching 2 1 applications. The complementary PNP types are TIP32A and TO-220 TI
8.3. Size:526K fairchild semi
tip31 tip31a tip31b tip31c.pdf 
July 2008 TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage TIP31 40 V TIP31A 60 V TIP31B 80 V TIP31C 100 V VCEO Collector-Emitter Voltage TIP31 40 V TIP
8.4. Size:256K mcc
tip31 tip31a tip31b tip31c to-220.pdf 
MCC TM Micro Commercial Components TIP31/31A/31B/31C 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates RoHS Compliant. See ordering information) Silicon NPN The complementary PNP types are the TIP32 respectively Epoxy meets UL 94 V-0
8.5. Size:227K onsemi
tip31g tip31ag tip31bg tip31cg tip32g tip32ag tip32bg tip32cg.pdf 
TIP31G, TIP31AG, TIP31BG, TIP31CG (NPN), TIP32G, TIP32AG, TIP32BG, TIP32CG (PNP) Complementary Silicon www.onsemi.com Plastic Power Transistors 3 AMPERE Designed for use in general purpose amplifier and switching applications. POWER TRANSISTORS COMPLEMENTARY SILICON Features 40-60-80-100 VOLTS, High Current Gain - Bandwidth Product 40 WATTS Compact TO-220 Package Th
8.6. Size:164K utc
tip31c.pdf 
UNISONIC TECHNOLOGIES CO., LTD TIP31C NPN EXPITAXIAL TRANSISTOR NPN EXPITAXIAL PLANAR TRANSISTOR DESCRIPTION The UTC TIP31C is a NPN epitaxial planar transistor, designed for using in general purpose amplifier and switching applications. FEATURES * Complement to TIP32C. ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3
8.8. Size:68K kec
tip31c.pdf 
SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A R FEATURES S Complementary to TIP32C. P D DIM MILLIMETERS A 10.30 MAX B 15.30 MAX C 0.80 MAXIMUM RATING (Ta=25 ) _ + D 3.60 0.20 T E 3.00 CHARACTERISTIC SYMBOL RATING UNIT F 6.70 MAX _ G 13.60 + 0.50 L H 5.60 MAX VCBO Collector-Base Voltage 100 V C C J 1.37 MAX K 0.50
8.9. Size:436K kec
tip31cf.pdf 
SEMICONDUCTOR TIP31CF TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. A C FEATURES DIM MILLIMETERS S _ Complementary to TIP32CF. A 10.0 + 0.3 _ + B 15.0 0.3 E C _ 2.70 0.3 + D 0.76+0.09/-0.05 _ E 3.2 0.2 + _ F 3.0 0.3 + _ 12.0 0.3 G + MAXIMUM RATING (Ta=25 ) 0.5+0.1/-0.05 H _ + J 13.6 0.5 L L R K _ 3.7 0.2 CHARACTERISTIC SYMBOL RA
8.10. Size:204K lge
tip31 tip31a tip31b tip31c.pdf 
TIP31/31A/31B/31C TO-220 Transistor (NPN) TO-220 1. BASE 2. COLLECTOR 3. EMITTER 3 2 1 Features Medium Power Linear Switching Applications Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter TIP31 TIP31A TIP31B TIP31C Units VCBO Collector-Base Voltage 40 60 80 100 V VCEO Collector-Emitter Voltage 40 60 80 100 V
8.11. Size:630K jilin sino
tip31c.pdf 
NPN NPN Epitaxial Silicon Transistor R TIP31C APPLICATIONS Medium Power Linear Switching Applications FEATURES V =100V (min) High collector voltage V =100V (min) CEO CEO TIP32C Complementary to TIP32C RoHS RoHS prod
8.12. Size:310K cystek
tip31cj3.pdf 
Spec. No. C609J3 Issued Date 2014.06.06 CYStech Electronics Corp. Revised Date Page No. 1/6 3A NPN Epitaxial Planar Power Transistor TIP31CJ3 Description TIP31CJ3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 0.5V(max) @ IC = 3A High collector-emitter sustaining volta
8.13. Size:149K cystek
tip31ce3.pdf 
Spec. No. C609E3 Issued Date 2003.09.04 CYStech Electronics Corp. Revised Date Page No. 1/4 3A NPN Epitaxial Planar Power Transistor TIP31CE3 Description TIP31CE3 is designed for use in general purpose amplifier and switching applications. Features Low collector-emitter saturation voltage, VCE(sat) = 1.2V(max) @ IC = 3A High collector-emitter sustaining vo
8.14. Size:530K semtech
sttip31c.pdf 
ST TIP31C NPN Silicon Epitaxial Planar Transistor for power switching and amplifier applications TO-220 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 100 V Emitter Base Voltage VEBO 5 V Collector Current IC 3 A Collector Current (Pulse) ICP 5 A Base Current IB 1 A O Power Diss
8.15. Size:278K feihonltd
tip31ca.pdf 
TRANSISTOR TIP31CA MAIN CHARACTERISTICS FEATURES IC 3A Epitaxial silicon VCEO 70V High switching speed VCBO 100V RoHS RoHS product PC 30W APPLICATIONS High frequency switch power supply Commonly power amplifier circuit High frequency powe
8.16. Size:443K cn evvo
tip31c.pdf 
TIP31C Silicon NPN Epitaxial Transistor TIP31C TIP31C, the base island technology NPN power transistor, make this device suitable for audio,power linear and switching applications.The complementary PNP type is TIP32C Features Complementary PNP-NPN devices h grouping FE h improved linearity FE RoHS product Applications General purpose circuits Audio amplifi
8.17. Size:149K inchange semiconductor
tip31 tip31a tip31b tip31c.pdf 
Inchange Semiconductor Product Specification Silicon NPN Power Transistors TIP31/31A/31B/31C DESCRIPTION With TO-220C package Complement to type TIP32/32A/32B/32C APPLICATIONS Medium power linear switching applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO
Другие транзисторы: MN1526P, MN1526R, MP1526O, MP1526P, MP1526R, ST13003-K, STD888T4, STX616-AP, BD136, TIP31C-R, TIP31C-Y, TIP41C-O, TIP41C-R, TIP41C-Y, TIP42C-O, TIP42C-R, TIP42C-Y
