Справочник транзисторов. 2N3773T3BL

 

Биполярный транзистор 2N3773T3BL - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: 2N3773T3BL
   Тип материала: Si
   Полярность: NPN
   Максимальная рассеиваемая мощность (Pc): 150 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 160 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 140 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 7 V
   Макcимальный постоянный ток коллектора (Ic): 16 A
   Предельная температура PN-перехода (Tj): 150 °C
   Статический коэффициент передачи тока (hfe): 15
   Корпус транзистора: TO3

 Аналоги (замена) для 2N3773T3BL

 

 

2N3773T3BL Datasheet (PDF)

 ..1. Size:1274K  cn sps
2n3773t3bl.pdf

2N3773T3BL
2N3773T3BL

2N3773T3BLSilicon NPN Power TransistorDESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which can also be used in powerswitching circuits such as relay or

 8.1. Size:205K  motorola
2n3773 2n6609.pdf

2N3773T3BL
2N3773T3BL

Order this documentMOTOROLAby 2N3773/DSEMICONDUCTOR TECHNICAL DATANPN2N3773*Complementary Silicon PowerPNP2N6609TransistorsThe 2N3773 and 2N6609 are PowerBase power transistors designed for high*Motorola Preferred Devicepower audio, disk head positioners and other linear applications. These devices canalso be used in power switching circuits such as relay or solenoid d

 8.2. Size:83K  st
2n3773.pdf

2N3773T3BL
2N3773T3BL

2N3773High power NPN transistorFeatures High power dissipation Low collector-emitter saturation voltageDescriptionThe device is a planar NPN transistor mounted in 1TO-3 metal case. It is intended for linear 2amplifiers and inductive switching applications.TO-3Figure 1. Internal schematic diagramTable 1. Device summaryOrder code Marking Package Packaging2N3773

 8.3. Size:80K  central
2n3773 2n6609.pdf

2N3773T3BL

TMCentralSemiconductor Corp.145 Adams AvenueHauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824www.centralsemi.com

 8.4. Size:182K  onsemi
2n3773g.pdf

2N3773T3BL
2N3773T3BL

2N3773NPN Power TransistorsThe 2N3773 is a PowerBaset power transistor designed for highpower audio, disk head positioners and other linear applications. Thisdevice can also be used in power switching circuits such as relay orsolenoid drivers, DC-DC converters or inverters.http://onsemi.comFeatures High Safe Operating Area (100% Tested) 150 W @ 100 V16 A NPN Completely

 8.5. Size:93K  onsemi
2n3773 2n6609.pdf

2N3773T3BL
2N3773T3BL

NPN 2N3773*, PNP 2N6609Preferred DeviceComplementary SiliconPower TransistorsThe 2N3773 and 2N6609 are PowerBaset power transistorsdesigned for high power audio, disk head positioners and other linearapplications. These devices can also be used in power switchinghttp://onsemi.comcircuits such as relay or solenoid drivers, DC-DC converters orinverters.16 A COMPLEMENTARYFeat

 8.6. Size:32K  utc
2n3773.pdf

2N3773T3BL
2N3773T3BL

UTC 2N3773/2N6099 P O W E R TRANSISTORCOMPLEMENTARY SILICONTRANSISTORS The 2N3773/2N6099 are power-base power transistorsdesigned for high power audio, disk head positions andother linear applications. These device can be used inpower switching circuits such as relay or solened drivers,DC to DC converters or inverts.FEATURES*High safe operating area(100 tested) 150W and 100V

 8.7. Size:214K  cdil
2n3773.pdf

2N3773T3BL
2N3773T3BL

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company2N3773NPN SILICON PLANAR POWER TRANSISTORTO-3Metal Can PackageComplementary 2N6609General Purpose Amplifier specially suited for Power Conditioning ApplicationsABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL UNITSVALUECollector Base Voltage VCBO 160 VCollector Emitter Voltage VCEO V140

 8.8. Size:172K  jmnic
2n3773.pdf

2N3773T3BL
2N3773T3BL

Product Specification www.jmnic.comSilicon NPN Power Transistors 2N3773 DESCRIPTION With TO-3 package Complement to type 2N6609 High DC current gain Low saturation voltage High safe operating area APPLICATIONS Designed for high power audio, disk head positioners and other linear applications. These devices can also be used in power switching circuits such as

 8.9. Size:167K  cn sptech
2n3773.pdf

2N3773T3BL
2N3773T3BL

SPTECH Product Specificationisc Silicon NPN Power Transistor 2N3773DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609APPLICATIONSDesigned for high power audio ,disk head positioners andother linear applications, which can also be used in powerswitch

 8.10. Size:192K  inchange semiconductor
2n3773.pdf

2N3773T3BL
2N3773T3BL

INCHANGE Semiconductorisc Silicon NPN Power Transistor 2N3773DESCRIPTIONExcellent Safe Operating AreaHigh DC Current Gain-h =15(Min)@I = 8AFE CLow Saturation Voltage-: V )= 1.4V(Max)@ I = 8ACE(sat CComplement to Type 2N6609100% avalanche testedMinimum Lot-to-Lot variations for robust device performanceand reliable operation.APPLICATIONSDesigned for high

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