BU406T1TLSilicon NPN Power TransistorDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 400 VCEVV C

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Order this documentMOTOROLAby BU406/DSEMICONDUCTOR TECHNICAL DATABU406BU407NPN Power TransistorsThese devices are high voltage, high speed transistors for horizontal deflectionoutput stages of TVs and CRTs.7 AMPERESNPN SILICON High Voltage: VCEV = 330 or 400 VPOWER TRANSISTORS Fast Switching Speed: tf = 750 ns (max)

BU406DBU407DSILICON NPN SWITCHING TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FORMONOCHROME TV 321 TO-220DESCRIPTION The BU406D and BU407D are silicon planarepitaxial NPN transistors with integrated damperdiode, in Jedec TO-220 plastic package. Theyare fast switching, devices for us

BU406SILICON NPN SWITCHING TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR VERY HIGH SWITCHING SPEED APPLICATIONS: HORIZONTAL DEFLECTION FORMONOCHROME TV 3DESCRIPTION 21The BU406 is a silicon Epitaxial Planar NPNtransistor in Jedec TO-220 plastic package.TO-220It is a fast switching device for use in horizontaldeflection output stages of la

BU406/406H/408High Voltage Switching Use In Horizontal Deflection Output StageTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage 400 V VCEO Collector-Emitter Voltage 200 V VEBO Emitter-Base Voltage 6 V IC Collector Current (DC) 7 A ICP Co

BU406/406H/408 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE SWITCHINGTO-220USE IN HORIZONTAL DEFLECTIONOUTPUT STAGEABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO 400 V Collector-Emitter Voltage VCEO 200 V Emitter-Base Voltage VEBO 6 V Collector Current IC 7 A 1.Base 2.Collector 3.Emitter Collector Peck Current ICM 10 A Base Current

BU406, BU407NPN Power TransistorsThese devices are high voltage, high speed transistors for horizontaldeflection output stages of TVs and CRTs.Features High Voltagewww.onsemi.com Fast Switching Speed Low Saturation VoltageNPN SILICON These Devices are Pb-Free and are RoHS Compliant*POWER TRANSISTORS7 AMPERES - 60 WATTSMAXIMUM RATINGS150 AND 200 VOLT

UNISONIC TECHNOLOGIES CO., LTD BU406 NPN PLANAR TRANSISTOR SILICON NPN SWITCHING TRANSISTOR DESCRIPTIONThe UTC BU406 is a NPN expitaxial planar transistor. It is a fast switching device for use in horizontal deflection output stages of large screens MTV receivers with 110C CRT. ORDERING INFORMATION Order Number Pin Assignment Package Packing Lead Free Halogen Free 1 2

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN PLASTIC POWER TRANSISTORS BU406BU407TO-220Plastic PackageHorizontal Deflection Output Stages of TV and CRTABSOLUTE MAXIMUM RATINGS (Ta=25C)DESCRIPTION SYMBOL BU406 BU407 UNITCollector Emitter Voltage VCEO 200 150 VCollector Base Voltage VCBO 400 330 VVCEVCollector Emitter Volta

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Transistors BU406 TRANSISTOR (NPN) TO-220-3L FEATURES High Voltage1. BASE Fast Switching Speed: tf = 750 ns (max) 2. COLLECTOR Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Pb-Free Packages are Available* 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Sy

NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR RBU406 MAIN CHARACTERISTICS Package I 7A CV 200V CEOP (IPAK) 35W CP (TO-220/220C/263) 60W C P (TO-3PB) 120W C TO-3PB APPLICATIONS TO-220C High frequency switching power supply High frequenc

BU406S(BR3DA406SR) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features High voltage. / Applications High voltage switching and humidifier. / Equivalent Circuit / Pinning 1 2

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406H APPLICATIONS High Voltage Swltching . ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150TjJunction Temperature150PCCollector Dissipation

NPN S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HBU406 APPLICATIONS High Voltage Swltching . ABSOLUTE MAXIMUM RATINGSTa=25 TO-220 TstgStorage Temperature -55~150 TjJunction Temperature150 PCCollector DissipationTc=25

NPN R BU406 A8 BU406 A8 NPN VCEO 100 V IC 7 A Ptot TC=25 60 W

NPN R BU406 A8 BU406 A8 NPN VCEO 100 V IC 7 A Ptot TC=25 60 W

TRANSISTOR BU406B MAIN CHARACTERISTICS FEATURES IC 6A Epitaxial silicon VCEO 150V High switching speed PC 65W High current capability RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform

TRANSISTOR BU406A MAIN CHARACTERISTICS FEATURES Epitaxial silicon IC 7A VCEO 200V High switching speed High current capability PC 60W RoHS RoHS product APPLICATIONS High frequency switching power supply High frequency power transform

BU406HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORFEATURES High Voltage Fast Switching Speed: tf = 750 ns (max) Low Saturation Voltage: VCE(sat) = 1 V (max) @ 5 A Pb-Free Packages are Available* MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage 400 V Collector-Emitter Voltage 200 VCEO V VEBO Emitter

BU406DT9TLSilicon NPN Power TransistorDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector-Emitter Voltage 200 VCEOP

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU406DESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collector

SPTECH Product SpecificationSPTECH Silicon NPN Power Transistor BU406DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 400 VCBOV Collect

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BU406F/407F DESCRIPTION High Voltage Fast Switching Speed- : toff= 0.75s (Max) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS Designed for use in converters, inverters, switching regulators and motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) S

isc Silicon NPN Power Transistor BU406HDESCRIPTIONHigh Voltage: V = 400V(Min)CEVLow Saturation Voltage-: V = 1.0V(Max.)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU406D BU407D DESCRIPTION With TO-220C package High voltage Fast switching speed Low saturation voltage Built-in damper diode APPLICATIONS For use in horizontal deflection output stages of TVs and CTVs circuits PINNING PIN DESCRIPTION1 Base Collector;connected to 2 moun

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU406 DESCRIPTION High Voltage: VCEV= 400V(Min) Fast Switching Speed- : tf= 750ns(Max) Low Saturation Voltage- : VCE(sat)= 1.0V(Max)@ IC= 5A APPLICATIONS Designed for use in horizontal deflection output stages of TVs and CRTs ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAME

isc Silicon NPN Power Transistors BU406FI/407FIDESCRIPTIONHigh VoltageLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switchingregulators and motor control systems etc.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER

isc Silicon NPN Power Transistor BU406DDESCRIPTIONHigh Voltage: V = 400V(Min)CEVFast Switching Speed-: t = 0.75s(Max)fLow Saturation Voltage-: V = 1.0V(Max)@ I = 5ACE(sat) CMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in horizontal deflection output stagesof TVs and CRTsABSOLUTE MAXI