2SA1013SQ-Y - описание и поиск аналогов

2SA1013SQ PNP Transistor Features SOT-89 High voltage Large continuous collector current capability Equivalent Circuit 2.Collector 1.Base 2.Collector 3. Emitter Marking Code 2SA1013SQ-R 1013R 1.Base 2SA1013SQ-O 1013O 2SA1013SQ-Y 1013Y 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Va

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

MCC Micro Commercial Components TM 2SA1013-R 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1013-O Phone (818) 701-4933 Fax (818) 701-4939 2SA1013-Y Features Lead Free Finish/Rohs Compliant ("P"Suffix designates RoHS Compliant. See ordering information) Capable of 0.9Watts of Power Dissipation. PNP Collector-current -1.0A Epitaxial Sili

UNISONIC TECHNOLOGIES CO., LTD 2SA1013 PNP EPITAXIAL SILICON TRANSISTOR PNP EPITAXIAL SILICON TRANSISTOR DESCRIPTION The UTC 2SA1013 is a PNP epitaxial silicon transistor, it uses UTC s advanced technology to provide the customers with high BVCEO and high DC current gain, etc. The UTC 2SA1013 is suitable for power switching and color TV vertical deflection output, etc.

2SA1013 -1A, -160V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURE TO-92L High Voltage VCEO= -160V G H Large Continuous Collector Current Capability 1Emitter 1 1 1 2Collector 2 2 Complementary to 2SC2383 2 3Base 3 3 3 J A D CLASSIFICATION OF hFE Millimete

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1013 TRANSISTOR (PNP) 1. BASE FEATURE 1 High voltage 2. COLLECTOR 2 2 3 Large continuous collector current capability 3. EMITTER MARKING 1013 MAXIMUM RATINGS (Ta=25 unless otherwise noted ) Symbol Parameter Value Unit VCBO Collector-Base Voltag

2SA1013 TO-92MOD Transistor (PNP) TO-92MOD 1. EMITTER 1 2 2. COLLECTOR 3 3. BASE 5.800 Features 6.200 High voltage VCEO=-160V 8.400 8.800 Large continuous collector current capability 0.900 Complementary to 2SC2383 1.100 0.400 0.600 13.800 14.200 1.500 TYP 2.900 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted)

2SA1013 TO-92L Transistor (PNP) TO-92L 1. EMITTER 2. COLLECTOR 3. BASE 2 3 4.700 1 5.100 Features 7.800 High voltage VCEO=-160V 8.200 0.600 Large continuous collector current capability 0.800 Complementary to 2SC2383 0.350 0.550 13.800 14.200 Dimensions in inches and (millimeters) 1.270 TYP MAXIMUM RATINGS (TA=25 unless otherwise noted) 2.440 2.640

SMD Type Transistors PNP Transistors 2SA1013 1.70 0.1 Features High voltage Large continuous collector current capability 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current

2SA1013 SOT-89 PNP Transistors 3 Features 2 High voltage 1.Base 1 Large continuous collector current capability 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -160 Collector - Emitter Voltage VCEO -160 V Emitter - Base Voltage VEBO -6 Collector Current - Con

INCHANGE Semiconductor isc Silicon PNP Transistor 2SA1013 DESCRIPTION High Voltage and High Current Vceo=-160V(Min. Excellent hFE Linearity Low Noise Complement to Type 2SC2383 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. AB