2SB1188SQ-P. Аналоги и основные параметры
Наименование производителя: 2SB1188SQ-P
Маркировка: 1188-P
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 32 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 typ MHz
Ёмкость коллекторного перехода (Cc): 50 pf
Статический коэффициент передачи тока (hFE): 82
Корпус транзистора: SOT89
Аналоги (замена) для 2SB1188SQ-P
- подборⓘ биполярного транзистора по параметрам
2SB1188SQ-P даташит
..1. Size:1466K pjsemi
2sb1188sq-p 2sb1188sq-q 2sb1188sq-r.pdf 
2SB1188SQ PNP Transistor SOT-89 Features Low collector saturation voltage Excellent h characteristics FE 1. Base 2. Collector 3.Emitter Marking 1188-P 1188-Q 1188-R Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current -IC 2 A Colle
7.1. Size:173K rohm
2sb1188 2sb1182 2sb1240.pdf 
Medium power transistor ( 32V, 2A) 2SB1188 / 2SB1182 / 2SB1240 Features Dimensions (Unit mm) 1) Low VCE(sat). 2SB1188 2SB1182 VCE(sat) = 0.5V (Typ.) (IC/IB = 2A / 0.2A) 2.3+0.2 6.5 0.2 -0.1 4.5+0.2 -0.1 C0.5 2) Complements the 2SD1766 / 2SD1758 / 2SD1862. +0.2 5.1+0.2 1.5-0.1 -0.1 0.5 0.1 1.6 0.1 0.65 0.1 0.75 (1) (2) (3) +0.1 Structure 0.4-
7.2. Size:130K rohm
2sb1188 2sb1188 2sb1182 2sb1240 2sb822 2sb1277 2sb911m.pdf 
Transistors Medium power Transistor(*32V,*2A) 2SB1188 / 2SB1182 / 2SB1240 / 2SB822 / 2SB1277 / 2SB911M FFeatures FExternal dimensions (Unit mm) 1) Low VCE(sat). VCE(sat) = *0.5V (Typ.) (IC / IB = *2A / *0.2A) 2) Complements the 2SD1766 / 2SD1758 / 2SD1862 / 2SD1189F / 2SD1055 / 2SD1919 / SD1227M. FStructure Epitaxial planar type PNP silicon transistor (96-131-B24) 215 2SB1188
7.3. Size:279K utc
2sb1188.pdf 
UNISONIC TECHNOLOGIES CO., LTD 2SB1188 PNP SILICON TRANSISTOR MEDIUM POWER LOW VOLTAGE TRANSISTOR DESCRIPTION The UTC 2SB1188 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. 1 FEATURES SOT-89 *High current output up to 3A *Low saturation voltage ORDERING INFORMATION Pin Assignment Orderi
7.4. Size:338K secos
2sb1188.pdf 
2SB1188 -2A, -40V PNP Silicon Medium Power Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION The 2SB1188 is designed for medium poweramplifier applications. 4 1 2 3 A FEATURES E C Low collector saturation voltage VCE(sat)=-0.5V(Typ.) RoHS Compliant Product B D F G CLASSIFICATION
7.5. Size:585K jiangsu
2sb1188.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors 2SB1188 TRANSISTOR (PNP) SOT-89-3L 1. BASE FEATURES Low VCE(sat). 2. COLLECTOR 1 Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage V
7.6. Size:321K htsemi
2sb1188.pdf 
2SB1 1 8 8 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES 1 Low VCE(sat). 2. COLLECTOR Complements the 2SD1766 2 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -40 V Collector-Base Voltage VCEO -32 V Collector-Emitter Voltage VEBO -5 V Emitter-Base Voltage Collector Current -Continuous IC -2 A Collector Power Dissip
7.7. Size:242K lge
2sb1188 sot-89.pdf 
2SB1188 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 2 1.8 3. EMITTER 1.4 1.4 3 2.6 4.25 2.4 3.75 Features 0.8 MIN 0.53 Low VCE(sat). 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 Complements the 2SD1766 1.5 3.0 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCB
7.8. Size:364K wietron
2sb1188k.pdf 
2SB1188K PNP Silicon Medium Power Transistors SOT-89 P b Lead(Pb)-Free 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER ABSOLUTE MAXIMUM RATINGS (TA = 25 C unless otherwise specified) Unit Parameter Symbol Ratings Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -32 V Emitter-Base Voltage VEBO -5 V Collector Current -Continuous IC -2 A Collector Power Dissipation PD
7.9. Size:761K wietron
2sb1188.pdf 
2SB1188 Epitaxial Planar PNP Transistors SOT-89 1 2 1. BASE 3 2. COLLECTOR 3. EMITTER % C ABSOLUTE MAXIMUM RATINGS (Ta=25 ) Rating Symbol Limits Unit Collector-Base Voltage Vdc VCBO -40 Collector-Emitter Voltage Vdc VCEO -32 Emitter-Base Voltage Vdc VEBO -5 IC A(DC) -2 Collector Current ICP -3 A (Pulse)* PC W Collector Power Dissipation 0.5 % T , Tstg C Junctio
7.10. Size:525K willas
2sb1188.pdf 
2SB1188 SOT-89 Plastic-Encapsulate Transistors TRANSISTOR (PNP) FEATURES Low VCE(sat).VCE(sat) = -0.5V (Typ.)(IC/IB = -2A / -0.2A) SOT-89 Complements the 2SD1766 Weight 0.05 g RoHS product for packing code suffix "G" 1. BASE Halogen free product for packing code suffix "H" MAXIMUM RATINGS (TA=25 unless otherwise noted) 1 2. COLLECTOR Symbol Parameter Value U
7.11. Size:558K semtech
st2sb1188u.pdf 
ST 2SB1188U PNP Silicon Epitaxial Planar Transistor Medium power transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 40 V Collector Emitter Voltage -VCEO 32 V Emitter Base Voltage -VEBO 5 V Collector Current - DC -IC 2 A Collector Current - Pulse 1) -ICP 3 1) A 0.5 PC W Collector Power Dissipation 2 2) Junction Temper
7.12. Size:349K kexin
2sb1188.pdf 
SMD Type Transistors SMD Type PNP Transistor 2SB1188 1.70 0.1 Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3
7.13. Size:94K chenmko
2sb1188gp.pdf 
CHENMKO ENTERPRISE CO.,LTD 2SB1188GP SURFACE MOUNT PNP Medium Power Transistor VOLTAGE 32 Volts CURRENT 2 Ampere APPLICATION * Power driver and Dc to DC convertor . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat)=-0.5V(typ.)(IC/IB=-2A/-0.2A) CONSTRUCTION 4.6MAX. 1.6MAX. 1.7MAX. 0.4+0.05 * PNP Switching Transistor MARKING * HFE(P) NO +
7.14. Size:2091K slkor
2sb1188-p 2sb1188-q 2sb1188-r.pdf 
2SB1188 SMD Ty p e PNP Transistors Features Low VCE(sat). VCE(sat) = -0.5V (Typ.) (IC/IB = -2A / -0.2A) 3 2 1 1.Base 2.Collector 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base Voltage VCBO -40 V Collector-emitter Voltage VCEO -32 V Emitter-base Voltage VEBO -5 V IC -2 A Collector current ICP * -3 A Coll
7.15. Size:1056K cn shikues
2sb1188q 2sb1188r.pdf 
2SB1188 PNP-Silicon General use Transistors 1W 1.5A 25V Applications Can be used for switching and amplifying in various 4 electrical and electronic circuit. 3 2 1 2 1 3 Maximum ratings SOT-89 Parameters Symbol Rating Unit 1 Base 2 Collector 3 Emitter V VCEO 25 Collector-emitter voltage (IB=0) VCBO 40 V Collector-base voltage IE=0 VEBO 6 V Emitter-b
Другие транзисторы: 2SA1013SQ-O, 2SA1013SQ-Y, 2SA1013SQ-R, 2SA1213SQ-O, 2SA1213SQ-Y, 2SB1132SQ-P, 2SB1132SQ-Q, 2SB1132SQ-R, D667, 2SB1188SQ-Q, 2SB1188SQ-R, 2SB772SQ-E, 2SB772SQ-P, 2SB772SQ-Q, 2SB772SQ-R, 2SC2873SQ-O, 2SC2873SQ-Y
