MMBT8050D-1.5A - Даташиты. Аналоги. Основные параметры

MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications. Equivalent Circuit 1.Base 2.Emitter 3.Collector 3.Collector Marking Code MMBT8050C-1.5A X1 MMBT8050D-1.5A Y1 1.Base 2. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value Unit Collector Base Voltage V 40

MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Peak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Te

MMBT8050D o TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat

MMBT8050C/D(1.5A) Features For switching and amplifier applications Especially suitable for AF-Driver stages and low power output stages Absolute maximum ratings (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 6 V Collector Current IC 1.5 A Power Dissipation PD 350 mW