BCX56-16U - описание и поиск аналогов

BCX56U NPN Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage VCBO 100 V Collector Emitter Voltage VCEO 80 V Emitter Base Voltage VEBO 5 V Collector Current IC 1 A Peak Collector Current ICM 1.5 A 0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150 Sto

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCX56T series 80 V, 1 A NPN power bipolar transistors Rev. 1 22 August 2019 Product data sheet 1. Product profile 1.1. General description NPN power transistors in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number Package PNP complement Nexperia JEDEC BCX56T SOT89 SC-62 BCX53T BCX56-10T BCX53-10T BCX56-16T

BCX54 ...- BCX56... NPN Silicon AF Transistors 1 For AF driver and output stages 2 High collector current 3 2 Low collctor-emitter saturation voltage Complementary types BCX51...BCX53 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101 Type Marking Pin Configuration Package BCX54-16 BD 1=B 2=C 3=E SOT89 BCX55 BE 1=B 2=C 3=E SOT89 BCX55-16

BCX56/BCX56-10/BCX56-16 Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO 100 IC=100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO IC=10mA, IB=0 Collector-Emitter Breakdown Voltage 80 V V(BR)EBO IE=10 A, IC=0 Emitter-Base Breakdown Voltage 5 V ICBO VCB=30V, IE=0 Collector-Base Cutoff Current 0.1 A IEBO VEB=

BCX54-BCX56 NPN Silicon AF Transistors SOT-89 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 2.4 3.75 For AF driver and output stages 0.8 MIN 0.53 High collector current 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Low collector-emitter saturation voltage 3.0 Complementary types BCX51 BCX53(PNP) Dimensions in inches and (millimeters) Ordering Information T

PBCX56-16-AU NPN Low Vce(sat) Transistor SOT-89 Unit inch(mm) Voltage 100V Current 1A Features Silicon NPN epitaxial type Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in comply with EU RoHS 2.0 Green molding compound as per IEC61249 Standar

BCX54/BCX55/BCX56 NPN Silicon AF Transistors FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types BCX51 BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE SOT-89 BCX55-10 BG SOT-89

BCX54/BCX55/BCX56 NPN Transistors Features High current (max. 1 A). Low voltage (max. 80 V). 3 2 1.Base 2.Collector 1 3.Emitter Simplified outline(SOT-89) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage BCX54 VCBO 45 V BCX55 60 V BCX56 100 V Collector-emitter voltage BCX54 VCEO 45 V BCX55 60 V BCX56 80 V Emitter-base voltage VEBO 5 V

BCX54,BCX55,BCX56 TRANSISTOR(NPN) SOT-89-3L SOT-89-3LPlastic-Encapsulate Transistors SOT-89-3L Features BCX51,BCX52,BCX53 ; Complementary to BCX51, BCX52,BCX53 500mW; Power Dissipation of 500mW High Stability and High Reliability Mechanical Data SOT-89-3L SO

BCX54 THRU BCX56 BCX54 THRU BCX56 BCX54 THRU BCX56 BCX54 THRU BCX56 BCX54 THRU BCX56 TRANSISTOR(NPN) FEATURE SOT-89 PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current 1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS Driver Stages of Audio Amplifiers MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit BCX54 45 VCBO Collector-Base Vo

RoHS COMPLIANT BCX56-16Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 Low collector-emitter saturation voltage Part no. with suffix Q means AEC-Q101 qualified Mechanical Data Package SOT-89 Molding compound meet

BCX54-BCX56 SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN) 1. BASE FEATURES 2. COLLECTOR PNP Complements to BCX51,BCX52,BCX53 Low Voltage 3. EMITTER High Current APPLICATIONS Driver Stages of Audio Amplifiers MARKING BCX54 BA, BCX54-10 BC, BCX54-16 BD BCX55 BE, BCX55-10 BG, BCX55-16BM BCX56 B H, BCX56-10 BK, BCX56-16 BL MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Plastic-Encapsulate Transistors BCX54/BCX55/BCX56 FEATURES (NPN) For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types BCX51 BCX53(PNP) ORDERING INFORMATION Type No. Marking Package Code 1. BASE BCX54 BA SOT-89 2. COLLECTO SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 3. EMITTER BCX55 BE SOT-89

YFSEMI ELECTRON NPN Silicon AF Transistors BCX54/BCX55/BCX56 FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types BCX51 BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE S

1 Jiangsu Weida Semiconductor Co., Ltd. NPN Transistors BCX54,BCX55,BCX56 (KCX54 ,KCX55,KCX56) Features High current (max. 1A). Low voltage (max.80V). Package SOT-89-3L. SOT-89-3L 1 B 2 C 3 E Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit BCX54 45 V VCBO Collector-base voltage BCX55 60 V BCX56 100 V BCX54 45 V VCEO Collector-emitter voltage BCX55