MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 5 VPeak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Te

MMBT8050C/D(1.5A)Features For switching and amplifier applications Especially suitable for AF-Driver stages and lowpower output stagesAbsolute maximum ratings (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation PD 350 mW

MMBT8050-1.5A NPN Transistor Features SOT-23 For Switching and AF Amplifer Applications.Equivalent Circuit 1.Base 2.Emitter 3.Collector3.CollectorMarking Code : MMBT8050C-1.5A : X1 MMBT8050D-1.5A : Y11.Base2. Emitter.Absolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified.Parameter Symbol Value UnitCollector Base Voltage V 40