Биполярный транзистор MRF15060 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF15060
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 185 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 3.5 V
Макcимальный постоянный ток коллектора (Ic): 8 A
Предельная температура PN-перехода (Tj): 200 °C
Граничная частота коэффициента передачи тока (ft): 1600 MHz
Ёмкость коллекторного перехода (Cc): 55 pf
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: CASE451-04
MRF15060 Datasheet (PDF)
mrf15060 mrf15060s.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf15060rev0.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15060/DThe RF SubMicron Bipolar LineMRF15060RF Power Bipolar TransistorsMRF15060SDesigned for broadband commercial and industrial applications at frequen-cies from 1400 to 1600 MHz. The high gain and broadband performance ofthese devices makes them ideal for largesignal, commonemitter class A and60 W, 1.
mrf15030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf15030rev7.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15030/DThe RF LineNPN SiliconMRF15030RF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz. Specified 26 Volts, 1490 MHz, Class AB Characteristics:
mrf1500.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
mrf15090.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF15090/DAdvance InformationThe RF LineMRF15090NPN SiliconRF Power TransistorDesigned for 26 volts microwave largesignal, common emitter, class A andclass AB linear amplifier applications in industrial and commercial FM/AMequipment operating in the range 14001600 MHz.90 W, 1.5 GHz Specified 26 Volts, 1
mrf1507 mrf1507t1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
mrf1507rev1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1507/DThe RF MOSFET LineMRF1507RF Power Field Effect TransistorMRF1507T1NChannel EnhancementMode Lateral MOSFETsThe MRF1507 is designed for broadband commercial and industrialapplications at frequencies to 520 MHz. The high gain and broadband 8 W, 520 MHz, 7.5 Vperformance of this device makes it ideal for
mrf1500r.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF1500/DThe RF LineMicrowave PulseMRF1500Power TransistorMotorola Preferred DeviceDesigned for 10251150 MHz pulse common base amplifier applicationssuch as DME. Guaranteed Performance @ 1090 MHzOutput Power = 500 Watts Peak500 W (PEAK), 10251150 MHzGain = 5.2 dB MinMICROWAVE POWER 100% Tested
mrf150.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
mrf150rev8.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
mrf150re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF150/DThe RF MOSFET LineRF Power Field-Effect TransistorNChannel EnhancementMode MRF150Designed primarily for linear largesignal output stages up to 150 MHzfrequency range. Specified 50 Volts, 30 MHz CharacteristicsOutput Power = 150 WattsPower Gain = 17 dB (Typ)150 W, to 150 MHzEfficiency = 45% (T
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
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BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050