MRF16030 - описание и поиск аналогов

 ..1. Size:81K  motorola
 mrf16030.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large signal, common base, Class C CW amplifier applications in the range 1600 1640 MHz. 30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz Class C Characteristics RF POWER TRANSISTOR Output Power = 30 Watts NPN SILICON

 0.1. Size:108K  motorola
 mrf16030rev3.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16030/D The RF Line MRF16030 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large signal, common base, Class C CW amplifier applications in the range 1600 1640 MHz. 30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz Class C Characteristics RF POWER TRANSISTOR Output Power = 30 Watts NPN SILICON

 8.1. Size:122K  motorola
 mrf160.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF160 Designed primarily for wideband large signal output and driver from 30 500 MHz. Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB 4.0 W, to 400 MHz Efficiency = 50% MOSFET BROADBAND

 8.2. Size:82K  motorola
 mrf16006.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF16006/D The RF Line MRF16006 NPN Silicon RF Power Transistor Designed for 28 Volt microwave large signal, common base, Class C CW amplifier applications in the range 1600 1640 MHz. 6.0 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz Class C Characteristics RF POWER TRANSISTOR Output Power = 6 Watts NPN SILICO

 8.3. Size:122K  motorola
 mrf160re.pdf 

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MRF160/D The RF MOSFET Line Power Field Effect Transistor N Channel Enhancement Mode MOSFET MRF160 Designed primarily for wideband large signal output and driver from 30 500 MHz. Typical Performance at 400 MHz, 28 Vdc Output Power = 4.0 Watts Gain = 17 dB 4.0 W, to 400 MHz Efficiency = 50% MOSFET BROADBAND

 8.4. Size:527K  macom
 mrf160.pdf 

MRF160 The RF MOSFET Line Broadband Power FET M/A-COM Products Released - Rev. 07.07 4W, to 500MHz, 28V Product Image Designed primarily for wideband large signal output and driver from 30 500 MHz. N Channel enhancement mode MOSFET Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.) Excellent thermal s

 8.5. Size:171K  macom
 mrf16006.pdf 

MRF16006 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 6.0W , 1.6GHz, 28V Product Image Designed for 28 V microwave large signal, common base, Class C, CW amplifier applications in the range 1600 1640 MHz. Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40% @