Биполярный транзистор MRF16030 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: MRF16030
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 103 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 4 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 1600 MHz
Статический коэффициент передачи тока (hfe): 20
Корпус транзистора: CASE395C-01
MRF16030 Datasheet (PDF)
mrf16030.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16030/DThe RF LineMRF16030NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC CharacteristicsRF POWER TRANSISTOROutput Power = 30 WattsNPN SILICON
mrf16030rev3.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16030/DThe RF LineMRF16030NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.30 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC CharacteristicsRF POWER TRANSISTOROutput Power = 30 WattsNPN SILICON
mrf160.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF160/DThe RF MOSFET LinePower Field Effect TransistorNChannel EnhancementMode MOSFETMRF160Designed primarily for wideband largesignal output and driver from30500 MHz. Typical Performance at 400 MHz, 28 VdcOutput Power = 4.0 WattsGain = 17 dB4.0 W, to 400 MHzEfficiency = 50%MOSFET BROADBAND
mrf16006.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF16006/DThe RF LineMRF16006NPN SiliconRF Power TransistorDesigned for 28 Volt microwave largesignal, common base, ClassC CWamplifier applications in the range 1600 1640 MHz.6.0 WATTS, 1.6 GHz Specified 28 Volt, 1.6 GHz ClassC Characteristics RF POWER TRANSISTOROutput Power = 6 WattsNPN SILICO
mrf160re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MRF160/DThe RF MOSFET LinePower Field Effect TransistorNChannel EnhancementMode MOSFETMRF160Designed primarily for wideband largesignal output and driver from30500 MHz. Typical Performance at 400 MHz, 28 VdcOutput Power = 4.0 WattsGain = 17 dB4.0 W, to 400 MHzEfficiency = 50%MOSFET BROADBAND
mrf160.pdf
MRF160 The RF MOSFET Line: Broadband Power FET M/A-COM Products Released - Rev. 07.07 4W, to 500MHz, 28V Product Image Designed primarily for wideband largesignal output and driver from 30500 MHz. NChannel enhancement mode MOSFET Guaranteed 28 V, 500 MHz performance Output power = 4.0 W Gain = 16 dB (min.) Efficiency = 55% (typ.) Excellent thermal s
mrf16006.pdf
MRF16006 The RF Line NPN Silicon Power Transistor M/A-COM Products Released - Rev. 07.07 6.0W , 1.6GHz, 28V Product Image Designed for 28 V microwave largesignal, common base, Class C, CW amplifier applications in the range 1600 1640 MHz. Specified 28 V, 1.6 GHz Class C characteristics Output power = 6 W Minimum gain = 7.4 dB, @ 6 W Minimum efficiency = 40% @
Другие транзисторы... 2SA1801 , 2SA1802 , 2SA1802A , 2SA1803 , 2SA1803O , 2SA1803R , 2SA1804 , 2SA1804O , BD777 , 2SA1805 , 2SA1805O , 2SA1805R , 2SA1806 , 2SA181 , 2SA1810 , 2SA1810B , 2SA1810C .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS