Справочник транзисторов. BC858CQ

 

Биполярный транзистор BC858CQ - описание производителя. Основные параметры. Даташиты.


   Наименование производителя: BC858CQ
   Маркировка: 3L
   Тип материала: Si
   Полярность: PNP
   Максимальная рассеиваемая мощность (Pc): 0.3 W
   Макcимально допустимое напряжение коллектор-база (Ucb): 30 V
   Макcимально допустимое напряжение коллектор-эмиттер (Uce): 30 V
   Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
   Макcимальный постоянный ток коллектора (Ic): 0.1 A
   Предельная температура PN-перехода (Tj): 150 °C
   Граничная частота коэффициента передачи тока (ft): 100 MHz
   Ёмкость коллекторного перехода (Cc): 4.5(max) pf
   Статический коэффициент передачи тока (hfe): 420
   Корпус транзистора: SOT23

 Аналоги (замена) для BC858CQ

 

 

BC858CQ Datasheet (PDF)

 ..1. Size:270K  cn yangzhou yangjie elec
bc856aq bc856bq bc857aq bc857bq bc857cq bc858aq bc858bq bc858cq.pdf

BC858CQ
BC858CQ

RoHS COMPLIANT BC856Q THRU BC858Q PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications General purpose switching and amplification Mechanical Data : SOT-23 Case Terminals: Tin plated

 8.1. Size:203K  diodes
bc856aw-bc858cw.pdf

BC858CQ
BC858CQ

BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT323 Complementary NPN Types Available (BC846AW BC848CW) Case material: molded plastic, Green molding compound For switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Ful

 8.2. Size:290K  diodes
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary NPN Types: BC846 BC848 Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

 8.3. Size:354K  diodes
bc856a-bc858c.pdf

BC858CQ
BC858CQ

BC856A-BC858C PNP SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Ideally Suited for Automatic Insertion Case: SOT23 Complementary NPN Types: BC846 BC848 Case Material: Molded Plastic, Green Molding Compound For Switching and AF Amplifier Applications UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Not

 8.4. Size:140K  infineon
bc856a bc856b bc856bw bc857a bc857b bc857bf bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bl3 bc858bw bc858c bc858cw bc859b bc859c bc860b bc860bw bc860cw.pdf

BC858CQ
BC858CQ

BC856...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC846...-BC850... (NPN) Pb-free (RoHS compliant) package1) Qualified according AEC Q1011Pb-containing package may be available upon special request20

 8.5. Size:861K  infineon
bc857a bc857b bc857bl3 bc857bw bc857c bc857cw bc858a bc858b bc858bw bc858c bc858cw bc859c bc860b bc860bw bc860cw.pdf

BC858CQ
BC858CQ

BC857...-BC860...PNP Silicon AF Transistor For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 hz and 15 kHz Complementary types: BC847...-BC850... (NPN) Pb-free (RoHS compliant) package Qualified according AEC Q1011)1BC857BL3 is not qualified according AEC Q101Type Marking Pin

 8.6. Size:778K  mcc
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858CQ
BC858CQ

BC856AW THRU BC858CWFeatures Halogen free available upon request by adding suffix "-HF" Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating PNP Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSGeneral Purpose Compliant. See Ordering Information)TransistorsMaximum Ratings @ 25C Unless Otherwise Specified Operating Junction Tempera

 8.7. Size:890K  mcc
bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC858A,BC858B,BC858CFeatures For Switching and AF Amplifier Applications Halogen Free. "Green" Device (Note 1) PNP Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingSmall Signal Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS TransistorCompliant. See Ordering Information) Maximum RatingsSOT-23 Operating Junction Temper

 8.8. Size:195K  mcc
bc856a bc857b bc858c sot-23.pdf

BC858CQ
BC858CQ

BC856AMCCMicro Commercial ComponentsTMTHRU20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933BC858CFax: (818) 701-4939FeaturesPNP Small Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) Epoxy meets UL 94 V-0 flammability ratingSignal TransistorMoisure Sensitivity Level 1

 8.9. Size:82K  onsemi
bc856bdw1t1g bc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf

BC858CQ
BC858CQ

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 8.10. Size:156K  onsemi
bc856bdw1t1g sbc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g sbc857cdw1t1g bc858cdw1t1g.pdf

BC858CQ
BC858CQ

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 8.11. Size:55K  onsemi
bc858cdxv6t1g.pdf

BC858CQ
BC858CQ

BC858CDXV6T1,BC858CDXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 These are Pb-Free DevicesMAXIMUM RATINGS(4) (5) (6)Rating Symbol Value UnitCollector -Emitter Voltag

 8.12. Size:209K  onsemi
bc856alt1g bc856blt1g bc857alt1g bc857blt1g bc857clt1g bc858alt1g bc858blt1g bc858clt1g bc859blt1g bc859clt1g.pdf

BC858CQ
BC858CQ

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureswww.onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGS (TA = 25C unless otherwise noted)2

 8.13. Size:86K  onsemi
nsvbc858clt1g.pdf

BC858CQ
BC858CQ

BC856ALT1G SeriesGeneral PurposeTransistorsPNP SiliconFeatureshttp://onsemi.com S and NSV Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirements; AEC-Q101COLLECTORQualified and PPAP Capable3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASE2EMITTERMAXIMUM RATINGS (TA = 25C unless other

 8.14. Size:215K  onsemi
bc856amtf bc856bmtf bc856cmtf bc857amtf bc857bmtf bc857cmtf bc858amtf bc858bmtf bc858cmtf bc859amtf bc859bmtf bc859cmtf bc860amtf bc860bmtf bc860cmtf.pdf

BC858CQ
BC858CQ

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 8.15. Size:172K  onsemi
bc856bdw1t1g bc857bdw1t1g bc858cdw1t1g.pdf

BC858CQ
BC858CQ

BC856BDW1T1G,BC857BDW1T1G Series,BC858CDW1T1G SeriesPreferred DevicesDual General PurposeTransistorshttp://onsemi.comPNP Duals(3) (2) (1)These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.Q1 Q2Features These Devices are Pb-Free, Halogen Free/BFR Fr

 8.16. Size:56K  onsemi
bc858cdxv6t1-5.pdf

BC858CQ
BC858CQ

BC858CDXV6T1,BC858CDXV6T5Dual General PurposeTransistorPNP Dualhttp://onsemi.comThis transistor is designed for general purpose amplifierapplications. It is housed in the SOT-563 which is designed for low(3) (2) (1)power surface mount applications.FeaturesQ1 Q2 These are Pb-Free DevicesMAXIMUM RATINGS(4) (5) (6)Rating Symbol Value UnitCollector -Emitter Voltag

 8.17. Size:156K  onsemi
bc856bdw1t1g bc857bdw1t1g sbc857bdw1t1g bc857cdw1t1g bc858cdw1t1g.pdf

BC858CQ
BC858CQ

BC856BDW1T1G,SBC856BDW1T1G Series,BC857BDW1T1G,SBC857BDW1T1G Series,BC858CDW1T1G Serieswww.onsemi.comDual General PurposeTransistorsPNP DualsSOT-363/SC-88These transistors are designed for general purpose amplifierCASE 419BSTYLE 1applications. They are housed in the SOT-363/SC-88 which isdesigned for low power surface mount applications.(3) (2) (1)Features S

 8.18. Size:352K  taiwansemi
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC858CQ
BC858CQ

BC856A SERIESTaiwan SemiconductorSmall Signal Product200mW, PNP Small Signal TransistorFEATURES - Epitaxial planar die construction- Surface device type mounting- Moisture sensitivity level 1- Matte Tin(Sn) lead finish with Nickel(Ni) underplate- Pb free and RoHS compliant- Green compound (Halogen free) with suffix "G" on packing code and prefix "G" on date codeMECHANICA

 8.19. Size:445K  jiangsu
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Colle

 8.20. Size:674K  htsemi
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC856A,B BC857A, B,C BC858A, B,C TRANSISTOR (PNP) FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications SOT-23 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage BC856 -80 V BC857 -50 BC858 -30 VCEO Collector-Emitter Voltage B

 8.21. Size:159K  lrc
lbc856alt3g lbc856blt3g lbc857alt1g lbc857blt3g lbc857clt1g lbc858alt1g lbc858blt3g lbc858clt3g lbc859blt1g lbc859clt3g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site a

 8.22. Size:178K  lrc
lbc858cdw1t1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which is65designed for low power surface mount applications.4We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 8.23. Size:276K  lrc
lbc858cwt1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountapplications. CWT1GFeaturesS-LBC856AWT1G, BWT1GWe declare that the material of product c

 8.24. Size:234K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc857clt1g lbc858alt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859blt1g lbc859clt1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 8.25. Size:158K  lrc
lbc856alt1g lbc856blt1g lbc857alt1g lbc857blt1g lbc857clt1g lbc858alt1g lbc858blt1g lbc858clt1g lbc859blt1g lbc859clt1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1GPNP Silicon SeriesS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with 3RoHS requirements. S- Prefix for Automotive and Other Applications Requiring 1Unique Sit

 8.26. Size:182K  lrc
lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g lbc856adw1t1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1GThese transistors are designed for general purpose amplifierapplications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.654We declare that the material of product compliance with RoHS requirements.S- Prefix for Automotive and Other A

 8.27. Size:254K  lrc
lbc856awt1g lbc856bwt1g lbc857awt1g lbc857bwt1g lbc857cwt1g lbc858awt1g lbc858bwt1g lbc858cwt1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC856AWT1G, BWT1GLBC857AWT1G, BWT1GPNP SiliconThese transistors are designed for general purposeCWT1Gamplifier applications. They are housed in the SOT323/LBC858AWT1G, BWT1GSC70 which is designed for low power surface mountCWT1Gapplications.S-LBC856AWT1G, BWT1GFeaturesWe declare that the material of product

 8.28. Size:194K  lrc
lbc856adw1t1g lbc856bdw1t1g lbc857bdw1t1g lbc857cdw1t1g lbc858bdw1t1g lbc858cdw1t1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.Dual General PurposeLBC85** DW1T1GTransistorsS-LBC85** DW1T1G65These transistors are designed for general purpose amplifier4applications. They are housed in the SOT363/SC88 which isdesigned for low power surface mount applications.1We declare that the material of product compliance with RoHS requirements.23S- Prefix for Automotive an

 8.29. Size:158K  lrc
lbc858clt1g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsLBC857CLT1G SeriesPNP SiliconS-LBC857CLT1G Moisture Sensitivity Level: 1 Series ESD Rating Human Body Model: >4000 VESD Rating Machine Model: >400 V We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site an

 8.30. Size:234K  lrc
lbc858alt1g lbc858alt1g lbc858blt1g lbc858blt3g lbc858clt1g lbc858clt3g lbc859blt1g lbc859blt1g lbc859clt1g lbc859clt3g.pdf

BC858CQ
BC858CQ

LESHAN RADIO COMPANY, LTD.General Purpose TransistorsPNP Silicon Moisture Sensitivity Level: 1 ESD Rating Human Body Model: >4000 VLBC857CLT1GESD Rating Machine Model: >400 VS-LBC857CLT1G We declare that the material of product compliance with SeriesRoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Siteand Control Ch

 8.31. Size:143K  panjit
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858CQ
BC858CQ

BC856AW ~ BC859CWPNP GENERAL PURPOSE TRANSISTORS30/45/65 Volts POWER 250 mWattsVOLTAGEFEATURES General purpose amplifier applications PNP epitaxial silicon, planar design Collector current IC = 100mA Complimentary (NPN) Devices : BC846AW/BC847AW/BC848AW/BC849BW Series Lead free in comply with EU RoHS 2011/65/EU directives Green molding compound as per IEC

 8.32. Size:176K  panjit
bc856a bc857a bc858a bc856b bc857b bc858b bc859b bc857c bc858c bc859c.pdf

BC858CQ
BC858CQ

BC856 SERIESPNP GENERAL PURPOSE TRANSISTORSPOWER 330 mWattVOLTAGE 30/45/65 VoltFEATURES0.120(3.04) General Purpose Amplifier Applications0.110(2.80) Collector Current IC = -100mA Complimentary (PNP) Devices : BC846/BC847/BC848/BC849Series Lead free in compliance with EU RoHS 2011/65/EU directive0.056(1.40)0.047(1.20) Green molding compound as per IEC61

 8.33. Size:140K  comchip
bc858cw-g.pdf

BC858CQ
BC858CQ

Small Signal TransistorBC856AW-G Thru. BC858CW-G (PNP)RoHS DeviceFeatures -Ideally suited for automatic insertion -For Switching and AF Amplifier ApplicationsSOT-323 -Power dissipationPCM: 0.15W (@TA=25C)0.087 (2.20)0.079 (2.00) -Collector current3ICM: -0.1A -Collector-base voltage0.053(1.35)0.045(1.15)VCBO: BC856W= -80VBC857W= -50V1 20.006 (0.15)BC85

 8.34. Size:688K  slkor
bc856aw 857aw 858aw bc856bw 857bw 858bw bc857cw bc858cw.pdf

BC858CQ
BC858CQ

BC856W-BC858WPlastic-Encapsulate TransistorsTRANSISTOR (PNP) FEATURES SOT-323 Ideally suited for automatic insertion For Switching and AF Amplifier Applications1. BASE 2. EMITTER3. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit Collector-Base Voltage BC856W -80VCBO V BC857W -50BC858W -30Collector-Emitter Voltage BC8

 8.35. Size:447K  umw-ic
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

RUMW UMW BC857SOT-23 Plastic-Encapsulate Transistors BC856A, B TRANSISTOR (PNP) BC857A, B,C SOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage BC856 -80 V B

 8.36. Size:781K  anbon
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c bc859b bc859c.pdf

BC858CQ
BC858CQ

BC856A/B-BC857A/B/CBC858A/B/C-BC859B/CGeneral Purpose TransistorPNP Silicon Package outlineFeatures Moisture sensitivity level: 1SOT-23 ESD rating human body model: >4000 V,machine model: >400 V Epitaxial plana chip construction Ideal for medium power application and switching Capable of 225mW power dissipation. Lead-free parts for green partner, ex

 8.37. Size:2269K  high diode
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC856-8SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( P NP )Features SOT- 23 Ideally suited for automatic insertion For Switching and AF Amplifier Applications Marking: BC856A=3A;BC856B=3B; BC857A=3E;BC857B=3F;BC857C=3G;BC858A=3J;BC858B=3K;BC858C=3L; CB EItem Symbol Unit Conditions ValueBC856Collector-Base Voltage -80 -50 BC857 V VC

 8.38. Size:6174K  msksemi
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

www.msksemi.comBC856/57/58ABCSemiconductor CompianceSemiconductor Compiance TRANSISTOR (PNP)1. BASE 2. EMITTER FEATURES 3. COLLECTOR Ideally suited for automatic insertion SOT-23 For Switching and AF Amplifier Applications DEVICE MARKING P/N MARK P/N MARK P/N MARKBC856A 3A BC856B 3BBC857A 3E BC857B 3F BC857C 3GBC858A 3J BC858B 3K BC858C 3LMAXIMUM RATINGS (T

 8.39. Size:254K  powersilicon
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

DATA SHEET BC856A/B,BC857A/B/C,BC858A/B/C PNP GENERAL PURPOSE TRANSISTOR VOLTAGE -30 ~ -65 V CURRENT -100 mA FEATURES PNP SILICON EPITAXIAL PLANAR TRANSISTOR FOR SWITCHING AND AMPLIFIER APPLICATIONS COLLECTOR CURRENT IC = -100mA LEAD FREE AND HALOGEN-FREE MECHANICAL DATA CASE: SOT-23 TERMINALS: SOLDERABLE PER MIL-STD-202G, METHOD 208 APPROX. WEIGHT: 0.008

 8.41. Size:135K  cn shandong jingdao microelectronics
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC858CQ
BC858CQ

Jingdao Microelectronics co.LTD BC856 BC857 BC858 BC856 BC857 BC858SOT-23PNP TRANSISTOR3FEATURES Ideally suited for automatic insertion For Switching and AF Amplifier Applications 1MAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value Unit2 BC856 -801.BASECollectorBase VoltageV BC8

 8.43. Size:2188K  cn yongyutai
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC856/BC857/BC858 TRANSI STOR (PNP)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Ideaiiy suited for automatic insertion For switching and AF amplifier applicationsMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitCollector-Base Voltage -80 BC856 VCBO -50 V BC857 -30 BC858Collector-Emitter Voltage -6

 8.44. Size:550K  cn zre
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC856/BC857/BC858 TRANSISTOR(PNP)SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applicationsMarking: Mechanical DataBC856A=3A BC856B=3B Small Outline Plastic PackageBC857A=

 8.45. Size:3051K  cn twgmc
bc856a bc856b bc856c bc857a bc857b bc857c bc858a bc858b bc858c bc859a bc859b bc859c bc860a bc860b bc860c.pdf

BC858CQ
BC858CQ

BC856 THRU BC860BC856 THRU BC860BC856 THRU BC860BC8 56 THRU BC8 60 TRANSISTOR(PNP)FEATURESSwitching and Amplifier Applications SOT-23 Suitable for automatic insertion in thick and thin-film circuits1BASE Low Noise: BC859, BC8602EMITTER 3COLLECTOR Complement to BC846 ... BC850MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit Collec

 8.46. Size:276K  cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bc857bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858CQ
BC858CQ

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingHalogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-

 8.47. Size:253K  cn yangzhou yangjie elec
bc856awq bc856bwq bc857awq bc857bwq bc857cwq bc858awq bc858bwq bc858cwq.pdf

BC858CQ
BC858CQ

RoHS RoHSCOMPLIANT COMPLIANTBC856AWQ THRU BC858CWQ PNP General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 Part no. with suffix Q means AEC-Q101 qualified Applications PNP General purpose switching and amplification Mechanical Data Case: SOT-323 Terminals: Tin plated

 8.48. Size:299K  cn yangzhou yangjie elec
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

RoHS RoHSCOMPLIANT COMPLIANTBC856/BC857/BC858 PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-23 Molding compound meets UL 94 V-0 flammability rating,RoHS-compliant, halogen-free Terminals: T

 8.49. Size:283K  cn yangzhou yangjie elec
bc856aw bc856bw bc857aw bcb57bw bc857cw bc858aw bc858bw bc858cw.pdf

BC858CQ
BC858CQ

RoHS RoHSCOMPLIANT COMPLIANTBC856AW THRU BC858CW PNP Transistor Features Epoxy meets UL-94 V-0 flammability ratingMoisture Sensitivity Level 1 High Conductance Surface Mount Package Ideally Suited for Automatic Insertion Mechanical Data Package: SOT-323 Molding compound meets UL 94 V-0 flammability rating, RoHS-compliant, halogen-free Termina

 8.50. Size:1082K  cn dowo
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC858CQ
BC858CQ

BC856-BC858BC856A, B TRANSISTOR (PNP)BC857A, B,CSOT-23 BC858A, B,C FEATURES 1. BASE 2. EMITTER Ideally suited for automatic insertion 3. COLLECTOR For Switching and AF Amplifier Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base Voltage BC856 -80V BC857 -50BC858 -30VCEO Collector-Emitter Voltage B

 8.51. Size:629K  cn doeshare
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC858CQ
BC858CQ

BC856/BC857/BC858 BC856/BC857/BC858 SOT-23 Plastic-Encapsulate Transistors (PNP) General description SOT-23 Plastic-Encapsulate Transistors (PNP) FEATURES Complementary to BC846/BC847/BC848 Power Dissipation of 200mW Ideally suited for automatic insertion For switching and AF amplifier applications SOT-23 Small Outline Plastic Package DEVICE MARKING COD

 8.52. Size:409K  cn cbi
bc856a bc856b bc856c bc857a bc857b bc857c bc858a bc858b bc858c bc859a bc859b bc859c bc860a bc860b bc860c.pdf

BC858CQ
BC858CQ

BC856BC860 PNP Silicon Epitaxial Transistor for switching and amplifier applications1.BASE 2.EMITTER 3.COLLECTORSOT-23 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage BC856 -VCBO 80 V BC857, BC860 -VCBO 50 V BC858, BC859 -VCBO 30 V Collector Emitter Voltage BC856 -VCEO 65 V BC857, BC860 -VCEO 45 V BC858, BC859 -

 8.53. Size:327K  cn fosan
bc856a bc857a bc858a bc856b bc857b bc858b bc857c bc858c.pdf

BC858CQ
BC858CQ

ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTDBC856/BC857/BC858FEATURES PNP General Purpose TransistorMAXIMUM RATINGS Characteristic Symbol GM856A,B GM857A,B,C GM858A,B,C Unit (BC856A,B) (BC857A,B,C) (BC858A,B,C) Collector-Emitter VoltageV -65 -45 -30 VdcCEOC

 8.54. Size:486K  cn hottech
bc856a bc856b bc857a bc857b bc857c bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

Plastic-Encapsulate Transistors(PNP)FEATURESBC856A/B (PNP)BC857A/B/CIdeally suited for automatic insertionBC858A/B/C (PNP)For Switching and AF Amplifier ApplicationsMarkingBC856A BC856B BC857A BC857B3A 3B 3E 3FBC857C BC858A BC858B BC858C1. BASE3G 3J 3K 3L2. EMITTER SOT-233. COLLECTOMAXIMUM RATINGS (TA=25 unless otherwise noted)Parameter Symbol Value UnitBC8

 8.55. Size:637K  cn hottech
bc858a bc858b bc858c.pdf

BC858CQ
BC858CQ

BC858BIPOLAR TRANSISTOR (PNP)FEATURES Complementary to BC848 Ideally suited for automatic insertion For switching and AF amplifier applications Surface Mount deviceSOT-23MECHANICAL DATA Case: SOT-23 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.008 grams (approximate)MAXIMUM RATINGS (T = 25C unless othe

Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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