RoHS COMPLIANT BCX56-16Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moitsure Sensitivity Level 1 Low collector-emitter saturation voltage Part no. with suffix Q means AEC-Q101 qualified Mechanical Data Package: SOT-89 Molding compound meet

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain

BCX56T series80 V, 1 A NPN power bipolar transistorsRev. 1 22 August 2019 Product data sheet1. Product profile1.1. General descriptionNPN power transistors in a medium power SOT89 (SC-62) flat lead Surface-Mounted Device(SMD) plastic package.Table 1. Product overviewType number Package PNP complementNexperia JEDECBCX56T SOT89 SC-62 BCX53TBCX56-10T BCX53-10TBCX56-16T

BCX54 ...- BCX56...NPN Silicon AF Transistors1 For AF driver and output stages2 High collector current 32 Low collctor-emitter saturation voltage Complementary types: BCX51...BCX53 (PNP) Pb-free (RoHS compliant) package Qualified according AEC Q101Type Marking Pin Configuration PackageBCX54-16 BD 1=B 2=C 3=E SOT89 BCX55 BE 1=B 2=C 3=E SOT89 BCX55-16

BCX56/BCX56-10/BCX56-16Electrical Characteristics @ 25C Unless Otherwise SpecifiedParameter Symbol Min Typ Max Units ConditionsV(BR)CBO 100 IC=100A, IE=0Collector-Base Breakdown Voltage VV(BR)CEO IC=10mA, IB=0Collector-Emitter Breakdown Voltage 80 VV(BR)EBO IE=10A, IC=0Emitter-Base Breakdown Voltage 5 VICBO VCB=30V, IE=0Collector-Base Cutoff Current 0.1 AIEBO VEB=

BCX54-BCX56 NPN Silicon AF TransistorsSOT-894.6B4.41.61.81.41.4Features2.64.252.43.75 For AF driver and output stages 0.8MIN0.53High collector current 0.400.480.442x)0.13 B0.35 0.371.5 Low collector-emitter saturation voltage 3.0 Complementary types:BCX51BCX53(PNP)Dimensions in inches and (millimeters)Ordering InformationT

BCX56U NPN Silicon Epitaxial Planar Transistor Medium Power Transistor Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Base Voltage VCBO 100 VCollector Emitter Voltage VCEO 80 VEmitter Base Voltage VEBO 5 VCollector Current IC 1 APeak Collector Current ICM 1.5 A0.5 1) Total Power Dissipation Ptot W 1.3 2) Junction Temperature Tj 150 Sto

PBCX56-16-AU NPN Low Vce(sat) Transistor SOT-89 Unit: inch(mm) Voltage 100V Current 1A Features Silicon NPN epitaxial type Low Vce(sat) 0.35V(max)@Ic/Ib= 500mA / 50mA High collector current capability Excellent DC current gain characteristics AEC-Q101 qualified Lead free in comply with EU RoHS 2.0 Green molding compound as per IEC61249 Standar

BCX54/BCX55/BCX56NPN Silicon AF Transistors FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types: BCX51BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE SOT-89 BCX55-10 BG SOT-89

BCX54/BCX55/BCX56NPN TransistorsFeaturesHigh current (max. 1 A).Low voltage (max. 80 V).321.Base2.Collector13.Emitter Simplified outline(SOT-89)Absolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage BCX54 VCBO 45 VBCX55 60 VBCX56 100 VCollector-emitter voltage BCX54 VCEO 45 VBCX55 60 VBCX56 80 VEmitter-base voltage VEBO 5 V

BCX54,BCX55,BCX56 TRANSISTOR(NPN)SOT-89-3L SOT-89-3LPlastic-Encapsulate TransistorsSOT-89-3L Features BCX51,BCX52,BCX53 ; Complementary to BCX51,BCX52,BCX53 500mW; Power Dissipation of 500mW High Stability and High Reliability Mechanical Data : SOT-89-3L SO

BCX54 THRU BCX56BCX54 THRU BCX56BCX54 THRU BCX56BCX54 THRU BCX56BCX54 THRU BCX56 TRANSISTOR(NPN)FEATURE SOT-89 PNP Complements to BCX51,BCX52,BCX53 Low Voltage High Current1. BASE 2. COLLECTOR 3. EMITTER APPLICATIONS Driver Stages of Audio Amplifiers MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Unit BCX54 45VCBO Collector-Base Vo

BCX54-BCX56SOT-89-3L BCX54,BCX55,BCX56 TRANSISTOR (NPN)1. BASEFEATURES 2. COLLECTOR PNP Complements to BCX51,BCX52,BCX53 Low Voltage3. EMITTER High CurrentAPPLICATIONS Driver Stages of Audio AmplifiersMARKING:BCX54:BA, BCX54-10:BC, BCX54-16:BD BCX55:BE, BCX55-10:BG, BCX55-16BM BCX56:B H, BCX56-10:BK, BCX56-16:BL MAXIMUM RATINGS (Ta=25 unless otherwise noted)

Plastic-Encapsulate Transistors BCX54/BCX55/BCX56 FEATURES (NPN) For AF driver and output stages High collector current Low collector-emitter saturation voltage Complementary types:BCX51BCX53(PNP) ORDERING INFORMATION Type No. Marking Package Code 1. BASE BCX54 BA SOT-89 2. COLLECTO SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 3. EMITTER BCX55 BE SOT-89

YFSEMI ELECTRONNPN Silicon AF Transistors BCX54/BCX55/BCX56 FEATURES For AF driver and output stages Pb High collector current Lead-free Low collector-emitter saturation voltage Complementary types: BCX51BCX53(PNP) SOT-89 ORDERING INFORMATION Type No. Marking Package Code BCX54 BA SOT-89 BCX54-10 BC SOT-89 BCX54-16 BD SOT-89 BCX55 BE S

1Jiangsu Weida Semiconductor Co., Ltd.NPN TransistorsBCX54,BCX55,BCX56(KCX54 ,KCX55,KCX56)FeaturesHigh current (max. 1A).Low voltage (max.80V).Package:SOT-89-3L.SOT-89-3L1:B 2:C 3:EAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitBCX54 45 VVCBOCollector-base voltageBCX55 60 VBCX56 100 VBCX54 45 VVCEOCollector-emitter voltageBCX55