S9013L datasheet, аналоги, основные параметры
Наименование производителя: S9013L
Маркировка: J3
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Статический коэффициент передачи тока (hFE): 120
Корпус транзистора: SOT23
Аналоги (замена) для S9013L
- подборⓘ биполярного транзистора по параметрам
S9013L даташит
s9013l s9013h s9013j.pdf
R UMW UMW S9013 SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT 23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V
s9013l s9013h s9013j.pdf
S9013 S9013 TRANSISTOR NPN 1 BASE 2 EMITTER 3 COLLECTOR TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Contin
s9013l s9013h s9013j.pdf
RoHS RoHS COMPLIANT COMPLIANT S9013 NPN Transistor Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking J3 Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 40 Collector-Emitter Voltage V
s9013lt1.pdf
S9013LT1 3 P b Lead(Pb)-Free 1 2 SOT-23 Value VCEO 20 40 5.0 500 S9013PLT1=13P S9013QLT1=13Q S9013RLT1=13R S9013SLT1=13S 0.1 20 40 100 100 u 0.15 35 0.15 u 4.0 1/2 28-Apr-2011 WEITRON http //www.weitron.com.tw S9013LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Max Unit Min ON CHARACTERISTICS DC Current Gain h
s9013lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd SOT-23 Plastic-Encapsulate Transistors SOT-23 S9013LT1 TRANSISTOR (NPN) 1. BASE FEATURES 2. EMITTER 3. COLLECTOR Complementary to S9012 Excellent hFE linearity MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter
ss9013.pdf
SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25 C unless otherwise noted Symbol Parameter Ratings Units VCB
ss9013.pdf
SS9013 NPN EPITAXIAL SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE TO-92 RADIOS IN CLASS B PUSH-PULL OPERATION. High total power dissipation. (PT=625mW) High Collector Current. (IC=500mA) Complementary to SS9012 Excelent hFE linearity. ABSOLUTE MAXIMUM RATINGS (T =25 ) A Characteristic Symbol Rating Unit V Collector-Base Voltage VCBO 40 V Collector-Emitter Vo
mms9013-l.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone (818) 701-4933 MMS9013-H Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating
mms9013-h.pdf
MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth MMS9013-L Micro Commercial Components CA 91311 Phone (818) 701-4933 MMS9013-H Fax (818) 701-4939 Features SOT-23 Plastic-Encapsulate Transistors NPN Silicon Capable of 0.3Watts(Tamb=25OC) of Power Dissipation. Collector-current 0.5A Plastic-Encapsulate Collector-base Voltage 40V Operating
s9013h s9013g s9013i.pdf
MCC S9013-G TM Micro Commercial Components 20736 Marilla Street Chatsworth S9013-H Micro Commercial Components CA 91311 S9013-I Phone (818) 701-4933 Fax (818) 701-4939 Features TO-92 Plastic-Encapsulate Transistors Capable of 0.625Watts(Tamb=25OC) of Power Dissipation. NPN Silicon Collector-current 0.5A Collector-base Voltage 40V Transistors Operating and
sts9013.pdf
STS9013 NPN Silicon Transistor Descriptions PIN Connection General purpose application. C Switching application. B Features Excellent hFE linearity. E Complementary pair with STS9012 TO-92 Ordering Information Type NO. Marking Package Code STS9013 STS9013 TO-92 Absolute maximum ratings (Ta=25 C) Characteristic Symbol Ratings Unit Collector-B
s9013w.pdf
S9013W 0.5A , 40V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 High Collector Current Excellent HFE Linearity A L 3 3 CLASSIFICATION OF hFE Top View C B 1 1 2 Product-Rank S9013W-L S9013W-H S9013W-J 2 K E Range 120 200 200 350 300 400 D Marking Code J3
s9013t.pdf
S9013T NPN Epitaxial Silicon Transistor RoHS Compliant Product TO-92 A suffix of "-C" specifies halogen & lead-free 4.55 0.2 3.5 0.2 FEATURE Power dissipation P CM 0.625 W Tamb=25 C Collector current CM 0.5 A I 0.43+0.08 0.07 Collector-base voltage 46+0.1 0. 0.1 V(BR)CBO 40 V (1.27 Typ.) Operating and storage junction temperature range 1 Emitter +0.2
s9013w.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT 323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. C
s9013.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) SOT 23 FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. 1. BASE MARKING J3 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage
s9013w.pdf
S901 3W TRANSISTOR(NPN) SOT 323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Current 500 mA P Collector Power Dissipatio
s9013.pdf
S901 3 TRANSISTOR(NPN) SOT-23 FEATURES 1. BASE Complementary to S9012 2. EMITTER Excellent hFE linearity 3. COLLECTOR MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Power
s9013.pdf
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM9013 FEATURES FEATURES FEATURES Excellent HFE Linearity HFE hFE(2)=25(Min.) at VCE=6V,Ic=400mA. Complementary to GM9012 GM9012 MAXIMUM RATINGS (Ta=25 ) MAXIMUM RATIN
s9013 to-92.pdf
S9013 Transistor(NPN) TO-92 1. EMITTER 2. BASE 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MAXIMUM RATINGS TA=25 unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO 5 V Emitter-Base Voltage IC Collector Current -Continuous 500 mA Dimensions in inches and (milli
s9013.pdf
S9013 NPN Silicon Epitaxial Planar Transistor FEATURES A SOT-23 High Collector Current.(IC= 500mA). Dim Min Max Complementary To S9012. A 2.70 3.10 E B 1.10 1.50 K B Excellent HFE Linearity. C 1.0 Typical D 0.4 Typical Power dissipation.(PC=300mW). E 0.35 0.48 J D G 1.80 2.00 G H 0.02 0.1 J 0.1 Typical APPLICATIONS H K 2.20 2.60 C All Dimensions in mm Hi
s9013 sot-23.pdf
S9013 SOT-23 Transistor(NPN) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9012 Excellent hFE linearity MARKING J3 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector
s9013.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd TO-92 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) TO-92 FEATURE Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE MAXIMUM RATINGS TA=25 unless otherwise noted 3. COLLECTOR Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emi
s9013.pdf
TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors TO-92 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES z FEATURES TO-92 Complementary to S9012 z Excellent hFE linearity 1.EMITTER MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise noted) MAXIMUM RATINGS 2.BASE Symbol Parameter Val
s9013.pdf
Product specification NPN Silicon Epitaxial Planar Transistor S9013 FEATURES Pb High Collector Current.(I = 500mA). C Lead-free Complementary To S9012. Excellent H Linearity. FE Power dissipation.(P =300mW). C APPLICATIONS High Collector Current. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9013 J3 SOT-23 none is for
s9013d s9013e s9013f s9013g s9013h s9013i s9013j.pdf
S9013 TRANSISTOR (NPN) FEATURES Complementary to S9012 1. EMITTER Excellent hFE linearity 2. BASE 3. COLLECTOR Equivalent Circuit Collector-Base Voltage 40 V Collector-Emitter Voltage 25 V Emitter-Base Voltage 5 V Collector Current -Continuous 0.5 A Co
s9013.pdf
S9013 General Purpose Transistors NPN Silicon Package outline Features High collector current. (500mA) SOT-23 Lead-free parts for green partner, exceeds environmental standards of MIL-STD-19500 /228 Suffix "-H" indicates Halogen-free part, ex. S9013 -H. (B) (C) (A) Mechanical data Epoxy UL94-V0 rated flame retardant 0.055 (1.40) 0.024 (0.60) 0.047 (1.20) 0.018 (0
s9013.pdf
S9013 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to S9012 High Stability and High Reliability MARKING J3 1. BASE 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage V
s9013.pdf
S9013 General Purpose Transistors NPN Silicon FEATURES High Collector Current. SOT-23 Complementary to S9012. Excellent hFE Linearity. MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current 500 mA PC Collector Power Dissipat
s9013.pdf
S9 013 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 High Collector Current. Complementary to S9012. Excellent hFE Linearity. Marking J3 Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V C V Collector-Emitter Voltage 25 V CEO V Emitter-Base Voltage 5 V EBO I Collector Current 500 mA C P Collector Power D
s9013.pdf
S9013 NPN Epitaxial Silicon Transistor TO-92 4.55 0.2 3.5 0.2 FEATURE Power dissipation P CM 0.625 W Tamb=25 C Collector current CM 0.5 A I 0.43+0.08 0.07 Collector-base voltage 46+0.1 0. 0.1 V(BR)CBO 40 V (1.27 Typ.) Operating and storage junction temperature range 1 Emitter +0.2 1.25 0.2 2 Base 1 2 3 stg Tj, T -55 to +150 C 3 Collector 2.5
s9013.pdf
S9013 NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. SOT-23 Plastic Package MARKING J3 O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEB
s9013-ms.pdf
www.msksemi.com S9013-MS Semiconductor Compiance Semiconductor Compiance TRANSISTOR (NPN) FEATURES High Collector Current. Complementary to S9012-MS Excellent hFE Linearity. 1. BASE 2. EMITTER MARKING J3 SOT 23 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Volta
s9013 s9013-l s9013-h s9013-j.pdf
S9013 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Excellent hFE linearity Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Power Dissipat
s9013-l s9013-h s9013-j.pdf
Jingdao Microelectronics co.LTD S9013 General Purpose Transistor NPN Silicon FEATURES High Collector Current. Complementary to S9012. Excellent hFE Linearity. SOT-23 3 COLLECTOOR 3 1 DEVICE MARKING BASE S9013 = J3 1 2 EMITTER 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc C
s9013 s9013-l s9013-h s9013-j.pdf
S9013 SOT-23 NPN Transistors 3 2 1.Base Features 2.Emitter 1 3.Collector Excellent hFE linearity Collector Current IC=0.5A Simplified outline(SOT-23) Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 40 V Collector - Emitter Voltage VCEO 25 V Emitter - Base Voltage VEBO 5 V Collector Current - Continuous IC 500 mA Collector Pow
s9013.pdf
S9013 SOT-23 Plastic-Encapsulate Transistors S9013 TRANSISTOR (NPN) FEATURES Complimentary to S9012 Collector current Ic=0.5A MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage
s9013.pdf
S9013 S9013 NPN Transistors General description SOT-23 Plastic-Encapsulate Transistors FEATURES Complementary to S9012 Power Dissipation of 300mW High Stability and High Reliability MECHANICAL DATA SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 Mounting Position Any Marking J3 Maximum Ratings & Thermal Characteristics TA = 25 C unl
s9013w.pdf
SOT-323 Plastic-Encapsulate Transistors S9013W TRANSISTOR (NPN) SOT 323 FEATURES High Collector Current Excellent HFE Linearity MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage 40 V CBO 2. EMITTER V Collector-Emitter Voltage 25 V CEO 3. COLLECTOR V Emitter-Base Voltage 5 V EBO IC Collector Cu
s9013.pdf
S9013 TRANSISTOR NPN FEATURES SOT-23 Complementary to S9012 Excellent hFE linearity 1 BASE 2 EMITTER 3 COLLECTOR MARKING J3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO 40 V Collector-Base Voltage VCEO 25 V Collector-Emitter Voltage VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Coll
s9013.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD S9013 MAXIMUM RATINGS (T =25 ) a Characteristic Symbol Rating Unit Collector-Base voltage V 40 Vdc CBO - -Collector-Emitter Voltage V 30 Vdc CEO - Emitter-Base voltage V 5.0 Vdc EBO
s9013.pdf
S9013 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 25Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=25V. Collector current IC=0.5A. ansition frequency fT>150MHz @ Tr IC=20mAdc, VCE=6Vdc, f=30MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 C Terminals Solde
s9013.pdf
S9013 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to S9012 Excellent h Linearity FE High Collector Current Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol
s9013.pdf
isc Silicon NPN Power Transistor S9013 DESCRIPTION Excellent hFE linearity Complement to PNP Type S9012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 40 V CBO V Collector-Emitter Voltage 25 V CEO V Emitter
Другие транзисторы: MMBT2222AQ, MMBT2907AQ, MMBT4401Q, MMBT5401Q, MMBT5551Q, MMBTA06Q, S8050-H, S8050-L, BC549, S9015H, S9015L, 2SA812H, 2SA812L, 2SC1623-L4, 2SC2412Q, 2SC2412R, 2SC2412S
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