2SA812H. Аналоги и основные параметры
Наименование производителя: 2SA812H
Маркировка: M6
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.2 W
Макcимально допустимое напряжение коллектор-база (Ucb): 50 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 45 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 0.1 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 150 MHz
Ёмкость коллекторного перехода (Cc): 7 max pf
Статический коэффициент передачи тока (hFE): 400
Корпус транзистора: SOT323
Аналоги (замена) для 2SA812H
- подборⓘ биполярного транзистора по параметрам
2SA812H даташит
..1. Size:1193K cn yongyutai
2sa812l 2sa812h.pdf 
2SA812 TRANSISTOR (PNP) SOT 323 FEATURES Small Surface Mount Package High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE V Collector-Base Voltage -50 V CBO 2. EMITTER V Collector-Emitter Voltage -45 V CEO 3. COLLECTOR V Emitter-Base Voltage -5 V EBO IC Collector Current -100 mA P Collector Power Dissipat
8.2. Size:243K secos
2sa812k.pdf 
2SA812K -50 V, -100 mA PNP Epitaxial Planar Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead free FEATURES Complementary to 2SC1623K High DC Current Gain hFE = 200 TYP. (VCE = -6V, IC = -1mA) High Voltage VCEO = -50V PACKAGE DIMENSIONS SOT-23 Collector 3 Dim Min Max A 2.800 3.040 1 Base B 1.200 1.400
8.3. Size:2054K jiangsu
2sa812.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD J C T SOT-23 Plastic-Encapsulate Transistors SOT-23 2SA812 TRANSISTOR (PNP) 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO
8.4. Size:757K htsemi
2sa812.pdf 
2SA8 1 2 SOT-23 TRANSISTOR(PNP) 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V VEBO Emitter-Base Voltage -5 V
8.5. Size:273K gsme
2sa812.pdf 
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM812 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - C
8.6. Size:244K lge
2sa812 sot-23.pdf 
2SA812 SOT-23 Transistor(PNP) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Voltage -50 V
8.7. Size:257K wietron
2sa812.pdf 
2SA812 PNP General Purpose Transistors 3 P b Lead(Pb)-Free 1 2 SOT-23 MAXIMUM RATINGS(Ta=25 C) Rating Symbol Value Unit VCBO Collector-Base Voltage -60 V Collector-Emitter Voltage VCEO -50 V VEBO Emitter-Base Voltage -6 V IC Collector Current - Continuous -150 mA Total Device Dissipation FR-5 Board, PD 200 mW T =25 C A Derate above 25 C mW/ C 1.8 Thermal Resistance,
8.8. Size:345K willas
2sa812xlt1.pdf 
FM120-M WILLAS 2SA812xLT1 THRU General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low pr FEATUREofile surface mounted application in order to o
8.9. Size:621K blue-rocket-elect
2sa812.pdf 
2SA812 Rev.E Mar.-2016 DATA SHEET / Descriptions SOT-23 PNP Silicon PNP transistor in a SOT-23 Plastic Package. / Features 2SC1623 Complementary pair with 2SC1623. / Applications Audio frequency amplifier application. / Equivalent Circuit / Pinning
8.10. Size:191K lrc
l2sa812slt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors FEATURE L2SA812QLT1G Series High Voltage VCEO = -50 V. S-L2SA812QLT1G Series Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifi
8.11. Size:187K lrc
l2sa812qlt1g.pdf 
LESHAN RADIO COMPANY, LTD. General Purpose Transistors L2SA812QLT1G Series FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 We declare that the material of product compliance with RoHS requirements. 3 S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualifie
8.12. Size:193K lrc
l2sa812qlt1g l2sa812qlt3g l2sa812rlt1g l2sa812rlt3g l2sa812slt3g l2sa812slt1g.pdf 
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu
8.13. Size:193K lrc
l2sa812rlt1g.pdf 
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu
8.14. Size:193K lrc
l2sa812qlt1g l2sa812rlt1g l2sa812slt3g l2sa812slt1g.pdf 
LESHAN RADIO COMPANY, LTD. L2SA812QLT1G Series General Purpose Transistors FEATURE S-L2SA812QLT1G Series High Voltage VCEO = -50 V. Epitaxial planar type. NPN complement L2SC1623 3 We declare that the material of product compliance with RoHS requirements. S- Prefix for Automotive and Other Applications Requiring Unique Site 1 and Control Change Requirements; AEC-Q101 Qu
8.15. Size:816K kexin
2sa812.pdf 
SMD Type SMD Type Transistors PNP Transistors 2SA812 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High DC Current Gain hFE = 200 TYP. (VCE = -6.0 V, IC = -1.0 mA) 1 2 High Voltage VCEO = -50 V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO
8.16. Size:260K galaxy
2sa812.pdf 
Product specification Silicon Epitaxial Planar Transistor 2SA812 FEATURES Pb Commplementary to 2SC1623. Lead-free High DC current gain h =200typ. FE (V =-6.0V,I =-1.0mA) CE C High Voltage V =-50V. CEO APPLICATIONS Audio frequency, general purpose amplifier. SOT-23 ORDERING INFORMATION Type No. Marking Package Code 2SA812 M4/M5/M6/M7 SOT-23
8.17. Size:385K slkor
2sa812m4 2sa812m5 2sa812m6 2sa812m7 2sa812m8.pdf 
2SA812 SOT-23 Plastic-Encapsulate Transistors SOT-23 TRANSISTOR (PNP) 1. BASE Unit mm FEATURES 2. EMITTER 3. COLLECTOR Complementary to 2SC1623 High DC Current Gain hFE=200 TYP.(VCE=-6V,IC=-1mA) High Voltage Vceo=-50V MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector- Base Voltage -60 V VCEO Collector-Emitter Volta
8.20. Size:815K cn yangzhou yangjie elec
2sa812-m4 2sa812-m5 2sa812-m6 2sa812-m7.pdf 
RoHS RoHS COMPLIANT COMPLIANT 2SA812 PNP Transistor Features Epoxy meets UL-94 V-0 flammability rating Moisture Sensitivity Level 1 Halogen free available upon request by adding suffix HF Surface mount package ideally Suited for Automatic Insertion PNP Mechanical Data ackage SOT-23 P Terminals Tin plated leads, solderable per
8.21. Size:281K cn fosan
2sa812.pdf 
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD 2SA812 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO -50 Vdc - Collector-Base Voltage VCBO -60 Vdc - Emitter-Base Voltage VEBO -5.0 Vdc - Co
8.22. Size:620K cn hottech
2sa812.pdf 
2SA812 BIPOLAR TRANSISTOR (PNP) FEATURES High DC current gain h =200(Typ) V = -6V,I = -1mA FE CE C High voltage V = -50V CEO Surface Mount device Complementary to 2SC1623 SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unles
Другие транзисторы: MMBT5401Q, MMBT5551Q, MMBTA06Q, S8050-H, S8050-L, S9013L, S9015H, S9015L, BC556, 2SA812L, 2SC1623-L4, 2SC2412Q, 2SC2412R, 2SC2412S, 2SC3356-SC1-R-R, 2SC3356-SD3-R-R, 2SC3356-SF3-R-R
