MMBT4401H. Аналоги и основные параметры
Наименование производителя: MMBT4401H
Маркировка: 2X
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 60 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 40 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 250 MHz
Статический коэффициент передачи тока (hFE): 200
Корпус транзистора: SOT23
Аналоги (замена) для MMBT4401H
- подборⓘ биполярного транзистора по параметрам
MMBT4401H даташит
..1. Size:1544K cn yongyutai
mmbt4401l mmbt4401h.pdf 
MMBT4401 TRANSI STOR (NPN) MARKING Equivalent Circuit SOT-23 1.BASE 2.EMITTER 3.COLLECTOR FEATURES Complimentary to MMBT4403 Collector Current Ic=0.6A Switching Transistor MAXIMUM RATINGS (Ta=25 unless otherwise noted) Parameter Symbol Value Unit VCBO 60 V Collector-Base Voltage VCEO 40 V Collector-Emitter Voltage VEBO 6 V Emitter-Base Voltage IC 600 mA C
6.1. Size:301K motorola
mmbt4401.pdf 
MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT4401LT1/D Switching Transistor MMBT4401LT1 NPN Silicon Motorola Preferred Device COLLECTOR 3 1 BASE 3 2 EMITTER 1 MAXIMUM RATINGS 2 Rating Symbol Value Unit Collector Emitter Voltage VCEO 40 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Collector Base Voltage VCBO 60 Vdc Emitter Base Voltage VEBO 6.
6.2. Size:162K fairchild semi
mmbt4401k.pdf 
November 2006 MMBT4401K tm NPN Epitaxial Silicon Transistor Switching Transistor Marking 3 2XK 2 SOT-23 1 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Dissipation 3
6.3. Size:92K fairchild semi
2n4401 mmbt4401.pdf 
2N4401 MMBT4401 C E C TO-92 B SOT-23 B E Mark 2X NPN General Pupose Amplifier This device is designed for use as a medium power amplifier and switch requiring collector currents up to 500 mA. Absolute Maximum Ratings* TA = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 40 V VCBO Collector-Base Voltage 60 V VEBO Emitter-Base Voltage 6.0
6.4. Size:257K diodes
mmbt4401.pdf 
MMBT4401 40V NPN SMALL SIGNAL TRANSISTOR IN SOT23 Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Ideal for Medium Power Amplification and Switching Case material molded Plastic Green Compound UL Flammability Rating 94V-0 Complementary PNP Type MMBT4403 Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Moisture Sensiti
6.5. Size:176K diodes
mmbt4401t.pdf 
MMBT4401T NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Type Available (MMBT4403T) C Dim Min Max Typ Lead Free/RoHS Compliant (Note 2) "Green" Device (Note 3 and 4) A 0.15 0.30 0.22 TOP VIEW B C B 0.75 0.85 0.80 B E Mechanical Data C 1.45 1.75 1.60 G Case SOT-523 D 0.50
6.6. Size:184K mcc
mmbt4401.pdf 
MCC Micro Commercial Components TM 20736 Marilla Street Chatsworth MMBT4401 Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Surface Mount SOT-23 Package Capable of 350mWatts of Power Dissipation NPN General Operating and Storage Junction Temperatures -55 to 150 Purpose Amplifier IC=600mA Marking 2X/M4A Lead Fre
6.7. Size:111K onsemi
mmbt4401m3.pdf 
MMBT4401M3T5G NPN Switching Transistor The MMBT4401M3T5G device is a spin-off of our popular SOT-23 three-leaded device. It is designed for general purpose switching applications and is housed in the SOT-723 surface mount package. This device is ideal for low-power surface mount applications where board space is at a premium. http //onsemi.com Features Reduces Board Space COLLECTO
6.8. Size:155K onsemi
mmbt4401lt1.pdf 
MMBT4401LT1G Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR 3 MAXIMUM RATINGS 1 Rating Symbol Value Unit BASE Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc 2 EMITTER Emitter-Base Voltage VEBO 6.0 Vdc Collector Current - Continuous IC 6
6.9. Size:152K onsemi
mmbt4401lt1g.pdf 
MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni
6.10. Size:381K onsemi
2n4401bu 2n4401tf 2n4401tfr 2n4401ta 2n4401tar mmbt4401.pdf 
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
6.11. Size:147K onsemi
mmbt4401wt1g.pdf 
MMBT4401WT1G Switching Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO
6.12. Size:147K onsemi
mmbt4401l smmbt4401l.pdf 
MMBT4401L, SMMBT4401L Switching Transistor NPN Silicon Features These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http //onsemi.com http //onsemi.com Compliant COLLECTOR AEC-Q101 Qualified and PPAP Capable 3 S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE MAXIMUM RATINGS 2 Rating Symbol Value Uni
6.13. Size:180K onsemi
mmbt4401wt1.pdf 
MMBT4401WT1G Switching Transistor NPN Silicon Features Moisture Sensitivity Level 1 http //onsemi.com ESD Rating Human Body Model; 4 kV, Machine Model; 400 V COLLECTOR These Devices are Pb--Free, Halogen Free/BFR Free and are RoHS 3 Compliant 1 BASE MAXIMUM RATINGS 2 EMITTER Rating Symbol Value Unit Collector -- Emitter Voltage VCEO 40 Vdc Collector -- Base Volta
6.14. Size:267K utc
mmbt4401.pdf 
UNISONIC TECHNOLOGIES CO., LTD MMBT4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 3 1 DESCRIPTION 2 The UTC MMBT4401 is designed for use as a medium power SOT-23 amplifier and switch requiring collector currents up to 500mA. (JEDEC TO-236) 3 1 2 SOT-323 ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3 MMBT4401G-AE3-R SOT-
6.16. Size:298K secos
mmbt4401w.pdf 
MMBT4401W NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A SOT-323 L COLLECTOR Dim Min Max 3 A 1.800 2.200 S Top View B B 1.150 1.350 3 1 C 0.800 1.000 BASE V G D 0.300 0.400 1 G 1.200 1.400 2 2 C H 0.000 0.100 EMITTER H J 0.100 0.250 J D K K 0.350 0.500 L 0.590 0.720 S 2.000 2.400 MAXIMUM RATINGS V 0.280 0.420 Rating Symbo
6.17. Size:951K secos
mmbt4401.pdf 
MMBT4401 NPN Silicon Elektronische Bauelemente Switching Transistor RoHS Compliant Product A suffix of "-C" specifies halogen & lead-free A COLLECTOR SOT-23 L 3 Dim Min Max 3 3 A 2.800 3.040 S Top View 1 B 1 1 2 B 1.200 1.400 BASE 2 C 0.890 1.110 V G D 0.370 0.500 2 EMITTER G 1.780 2.040 C H 0.013 0.100 J 0.085 0.177 H J D K K 0.450 0.600 L 0.890 1.020 MAXIM
6.18. Size:686K jiangsu
mmbt4401.pdf 
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT 23 FEATURES Switching Transistor MARKING 2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit 1. BASE VCBO Collector-Base Voltage 60 V 2. EMITTER VCEO Collector-Emitter Voltage 40 V 3. COLLECTOR VEBO Emitter-Base Vol
6.19. Size:109K zovie
mmbt4401gh.pdf 
Zowie Technology Corporation Switching Transistor NPN Silicon Lead free product Halogen-free type COLLECTOR 3 3 BASE 1 1 MMBT4401GH 2 2 EMITTER SOT-23 MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage VCEO 40 Vdc Collector-Base Voltage VCBO 60 Vdc Emitter-Base Voltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc THERMAL CHARACTERISTICS Characteri
6.20. Size:1474K htsemi
mmbt4401.pdf 
MMBT4401 TRANSISTOR(NPN) SOT-23 FEATURES Switching transistor 1. BASE MARKING MMBT4401=2X 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 600 mA PC Collector Power dissipation
6.21. Size:316K gsme
mmbt4401.pdf 
Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. Guilin Strong Micro-Electronics Co.,Ltd. GM4401 MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc -
6.22. Size:195K lge
mmbt4401.pdf 
MMBT4401 SOT-23 Transistor(NPN) 1. BASE SOT-23 2. EMITTER 3. COLLECTOR Features Switching transistor MARKING MMBT4401=2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60 V Dimensions in inches and (millimeters) VCEO Collector-Emitter Voltage 40 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuou
6.23. Size:520K wietron
mmbt4401.pdf 
MMBT4401 COLLECTOR 3 Switching Transistor NPN Silicon 3 1 1 BASE 2 2 SOT-23 EMITTER Maximum Ratings Rating Symbol Value Unit Collector-Emitter Voltage V 40 Vdc CEO Collector-Base Voltage VCBO 60 Vdc Emitter-Base VOltage VEBO 6.0 Vdc Collector Current-Continuous IC 600 mAdc Thermal Characteristics Characteristics Symbol Max Unit Total Device Dissipation FR-5 Board (1) mW
6.24. Size:422K willas
mmbt4401lt1.pdf 
FM120-M WILLAS MMBT4401LT1 THRU General Purpose Transistor FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers We declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.
6.25. Size:528K willas
mmbt4401wt1.pdf 
FM120-M WILLAS THRU MMBT4401WT1 General Purpose Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to We declare
6.26. Size:285K can-sheng
mmbt4401.pdf 
SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors SOT-23 Plastic-Encapsulate Transistors FEATURES FEATURES FEATURES FEATURES Switching transistor SOT-23 MARKING MMBT4401=2X MARKING MMBT4401=2X MARKING MMBT4401=2X MARKING MMBT4401=2X MAXIMUM RATINGS MAXIMUM RATINGS MAXIMUM RATINGS (TA=25 unless otherwise no
6.28. Size:198K semtech
mmbt4401.pdf 
MMBT4401 NPN Silicon General Purpose Transistor TO-236 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current Continuous IC 600 mA Total Device Dissipation FR-5 Board 1) Ptot 300 mW O Thermal Resistance Junction to Ambient R JA 417 C/W
6.29. Size:1817K kexin
mmbt4401.pdf 
SMD Type Transistors NPN Transistors MMBT4401 (KMBT4401) SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Ideal for Medium Power Amplification and Switching Complementary PNP Type Available (MMBT4403) 1 2 +0.1 +0.05 0.95 -0.1 0.1-0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Colle
6.30. Size:148K panjit
mmbt4401.pdf 
MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR POWER 40 Volt 225 mWatt VOLTAGE FEATURES 0.120(3.04) NPN epitaxial silicon, planar design 0.110(2.80) Collector-emitter voltage VCE = 40V Collector current IC = 600mA Lead free in compliance with EU RoHS 2011/65/EU directive 0.056(1.40) Green molding compound as per IEC61249 Std. . 0.047(1.20) (Halogen Free) 0
6.31. Size:139K comchip
mmbt4401-g.pdf 
General Purpose Transistor MMBT4401-G (NPN) RoHS Device Features SOT-23 -Switching Transistor 0.118(3.00) 0.110(2.80) 3 0.055(1.40) Circuit Diagram 0.047(1.20) 1 2 0.079(2.00) 0.071(1.80) Collector 3 0.006(0.15) 0.003(0.08) 0.041(1.05) 0.100(2.55) 1 0.035(0.90) Base 0.089(2.25) 2 0.004(0.10) max Emitter 0.020(0.50) 0.020(0.50) 0.012(0.30) 0.012(0.30) Dimension
6.32. Size:666K umw-ic
mmbt4401.pdf 
R UMW UMW MMBT4401 SOT-23 Plastic-Encapsulate Transistors MMBT4401 TRANSISTOR (NPN) SOT-23 FEATURES Switching Transistor MARKING 2X 1. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2. EMITTER 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 60
6.35. Size:892K fms
mmbt4401.pdf 
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT4401 TRANSISTOR (NPN) FEATURES Switching Transistor SOT 23 MARKING 2X MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V 1. BASE VEBO Emitter-Base Voltage 6 V 2. EMITTER IC Collector Current 600 mA 3. COLLECTOR PC
6.36. Size:2354K high diode
mmbt4401.pdf 
MMBT4401 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) SOT- 23 Features Switching Transistor Marking 2X Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V V Collector-Emitter Voltage 40 V CEO C V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Collector Power Dissipation 300 mW C R JA Thermal Resistance From Junction T
6.37. Size:745K jsmsemi
mmbt4401.pdf 
MMBT4401 NPN Silicon Epitaxial Planar Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available MMBT4403. Ideal for medium power amplification and switching. APPLICATIONS General purpose application, switching application. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value Units Collector-Base Voltage V
6.38. Size:1619K mdd
mmbt4401.pdf 
MMBT4401 TRANSISTOR (NPN) FEATURES SOT-23 Switching transistor MARKING MMBT4401=2X 1. BASE MAXIMUM RATINGS (TA=25 unless otherwise noted) 2. EMITTER Symbol Parameter Value Units 3. COLLECTOR VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.6 A PC Collector Power Dissipation 0
6.39. Size:6088K msksemi
mmbt4401.pdf 
www.msksemi.com MMBT4401 Semiconductor Compiance Semiconductor Compiance FEATURES Switching Transistor MARKING 2X SOT 23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 40 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collect
6.40. Size:1009K pjsemi
mmbt4401.pdf 
MMBT4401 NPN Transistor Features For Switching and AF Amplifer Applications. Silicon Epitaxial Chip. SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute Maximum Ratings (T = 25 ) A Parameter Symbol Value Unit Collector Base Voltage VCBO 60 V Collector Emitter Voltage VCEO 40 V Emitter Base Voltage VEBO 6 V Collector Current I 600 mA C Power Dissipation 1
6.42. Size:786K cn shandong jingdao microelectronics
mmbt4401.pdf 
Jingdao Microelectronics co.LTD MMBT4401 MMBT4401 SOT-23 NPN TRANSISTOR 3 FEATURES Switching Transistor 1 MAXIMUM RATINGS (Ta=25 unless otherwise noted) 2 Symbol Parameter Value Unit 1.BASE Collector Base Voltage VCBO 60 V 2.EMITTER Collector Emitter Voltage VCEO 40 V 3.COLLECTOR Emitter Base Voltage VEBO 6 V
6.44. Size:581K cn yfw
mmbt4401.pdf 
MMBT4401 SOT-23 NPN Transistors 3 Features Ideal for Medium Power Amplification and Switching 2 1.Base Complementary PNP Type Available (MMBT4403) 2.Emitter 1 3.Collector Simplified outline(SOT-23) Marking Marking 2X Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO
6.45. Size:1871K cn twgmc
mmbt4401.pdf 
MMBT3904 MMBT4401 AO3400 SI2305 MMBT4401 TRANSISTOR ( NPN) FEATURES Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT4403) Ideal for Medium Power Amplification and Switching SOT-23 1 BASE 2 EMITTER 3 COLLECTOR MARKING 2X MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units Collector-Base Voltage VCBO 60
6.46. Size:353K cn yangzhou yangjie elec
mmbt4401q.pdf 
RoHS RoHS COMPLIANT COMPLIANT MMBT4401Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Conductance Part no. with suffix Q means AEC-Q101 qualified Applications Switching and linear amplification Mechanical Data Case SOT-23 Terminals Tin plated leads,
6.47. Size:314K cn yangzhou yangjie elec
mmbt4401.pdf 
RoHS RoHS COMPLIANT COMPLIANT MMBT4401 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Halogen free available upon request by adding suffix HF Moisture Sensitivity Level 1 Marking 2X Maximum Ratings (Ta=25 unless otherwise noted) Item Symbol Unit Conditions Value Collector-Base Voltage VCBO V 60 Collector
6.48. Size:495K cn doeshare
mmbt4401.pdf 
MMBT4401 MMBT4401 SOT-23 Plastic-Encapsulate Switching Transistors (NPN) General description SOT-23 Plastic-Encapsulate Switching Transistors (NPN) FEATURES Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT4401 2X Maximum Ratings & The
6.49. Size:331K cn fosan
mmbt4401.pdf 
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT4401 MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector-Emitter Voltage VCEO 40 Vdc - Collector-Base Voltage VCBO 60 Vdc - Emitter-Base Voltage VEBO 6.0 Vdc -
6.50. Size:2012K cn goodwork
mmbt4401.pdf 
MMBT4401 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 60Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=40V. Collector current IC=0.6A. ansition frequency fT>250MHz @ Tr IC=20mAdc, VCE=20Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals So
6.51. Size:696K cn hottech
mmbt4401.pdf 
MMBT4401 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT4403 Switching Transistor Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symbol Value Unit Collector-Base V
6.52. Size:502K cn xch
mmbt4401.pdf 
Features A SOT-23 C Dim Min Max A 0.37 0.51 B C B 1.20 1.40 TOP VIEW B E C D 2.30 2.50 E G D 0.89 1.03 E 0.45 0.60 H G 1.78 2.05 K H 2.8
Другие транзисторы: MMBT2222A-L, MMBT2907A-H, MMBT2907A-L, MMBT3904-H, MMBT3904J, MMBT3904-L, MMBT3906-H, MMBT3906-L, 2N2222, MMBT4403H, MMBT5401H, MMBT5401-H, MMBT5401-L, MMBT5551H, MMBT5551-H, MMBT5551-L, MMBTA42-L
