MMBT5551-L. Аналоги и основные параметры
Наименование производителя: MMBT5551-L
Маркировка: G1
Тип материала: Si
Полярность: NPN
Предельные значения
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 180 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 160 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 0.6 A
Предельная температура PN-перехода (Tj): 150 °C
Электрические характеристики
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 6 max pf
Статический коэффициент передачи тока (hFE): 100
Корпус транзистора: SOT23
Аналоги (замена) для MMBT5551-L
- подборⓘ биполярного транзистора по параметрам
MMBT5551-L даташит
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter
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mmbt5551.pdf
MCC Micro Commercial Components TM MMBT5551 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features NPN Plastic Halogen free available upon request by adding suffix "-HF" Collector Current ICM=0.6A Encapsulate Collector-Base Voltage V(BR)CBO=180V Operating And Storage Temperatures 55OC to 150OC
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SMD Type Transistors SMD Type NPN Transistors (KMBT5551) MMBT5551 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High Voltage Transistors Pb-Free Packages are Available 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter volt
mmbt5551.pdf
MMBT5551 NPN HIGH VOLTAGE TRANSISTOR 160 Volts POWER 250 mWatts VOLTAGE FEATURES 0.120(3.04) 0.110(2.80) NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 0.056(1.40) Green molding compound as per IEC 61249 standard 0.047(1.20) 0.079(2.00) 0.008(0.20) MECHANICAL DATA 0.070(1.
mmbt5551.pdf
Product specification NPN General Purpose Transistor MMBT5551 FEATURES Pb Epitaxial planar die construction. Lead-free Complementary PNP type available (MMBT5401). Also available in lead free version. MSL 1 APPLICATIONS Ideal for medium power amplification and switching. SOT-23 ORDERING INFORMATION Type No. Marking Package Code MMBT5551 G
mmbt5551.pdf
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mmbt5551.pdf
R UMW UMW MMBT5551 SOT-23 Plastic-Encapsulate Transistors MMBT5551 TRANSISTOR (NPN) SOT 23 FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching 1. BASE MARKING G1 2. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. COLLECTOR Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage
mmbt5551.pdf
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mmbt5551.pdf
MMBT5551 Transistors SOT-23 Plastic-Encapsulate Transistors(NPN) RHOS SOT-23 Features Complementary to MMBT5401 Epitaxial planar die construction Power Dissipation of 300mW 1. BASE MARKING G1 2. EMITTER 3. COLLECTOR Maximum Ratings (Ratings at 25 ambient temperature unless otherwise specified.) Parameters Symbol Value Unit Collector-Base Voltage VCBO
mmbt5551.pdf
MMBT5551 High Voltage Transistors NPN Silicon FEATURES Complementary to MMBT5401 SOT-23 Ideal for Medium Power Amplification and Switching MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipatio
mmbt5551.pdf
SOT-23 Plastic-Encapsulate Transistors Formosa MS MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1. BASE 2. EMITTER 3. COLLECTOR - MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V
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MMBT5551 HD-ST0.44 SOT-23 Plastic-Encapsulate Transistors TRANSISTOR( NP N ) Features SOT- 23 Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching Marking G1 Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V V Collector-Emitter Voltage 160 V C CEO V Emitter-Base Voltage 6 V EBO I Collector Current 600 mA C P Coll
mmbt5551.pdf
MMBT5551 NPN General Purpose Transistor FEATURES Epitaxial planar die construction. Complementary PNP type available (MMBT5401). Also available in lead free version. APPLICATIONS Ideal for medium power amplification and switching. SOT-23 MAXIMUM RATING @ Ta=25 unless otherwise specified Symbol Parameter Value UNIT VCBO collector-base voltage 180 V VCEO collec
mmbt5551.pdf
MMBT5551 TRANSISTOR(NPN) FEATURES Complementary to MMBT5401 Ideal for Medium Power Amplification and Switching SOT-23 Plastic Package O Absolute Maximum Ratings (Ta = 25 C) Symbol Parameter Value Unit VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Current 600 mA PC Collector Power Dissipation 300 mW R
mmbt5551.pdf
MMBT5551 GENERAL PURPOSE TRANSISTORS NPN Silicon FEATURES NPN Silicon Epitaxial planar Transistor For Switching And Amplifier Applications Collector Current IC=600mA C MECHANICAL DATA E Available in SOT-23 Package Solderability MIL-STD-202, Method 208 Full RoHS Compliance B ORDERING INFORMATION PART NUMBER PACKAGE SHIPPING MARKING CODE G1
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MMBT5551DW Descriptions Double silicon NPN transistor in a SOT-363 Plastic Package. Features High voltage, complementary pair with MMBT5401DW. Applications General purpose high voltage amplifier. Equivalent Circuit Pinning PIN 1 4 Emitter PIN 2 5 Base PIN 3 6 Collector hFE Classifications & Marking See Marking Instructions. REV.08 1 of 6 MMBT55
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Integrated in OVP&OCP products provider MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emi
mmbt5551.pdf
MMBT5551 SOT-23 NPN Transistors 3 2 1.Base 2.Emitter Features 1 3.Collector High Voltage Transistors Simplified outline(SOT-23) Pb-Free Packages are Available Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 180 V Collector-emitter voltage VCEO 160 V Emitter-base voltage VEBO 6 V Collector current-continuous IC 0.6 A Collector Powe
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MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data SOT-23 SOT-23 Small Outline Plastic Pack
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MMBT5551 MMBT5551 AO3400 SI2305 MMBT5551 TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 SOT-23 Ideal for medium power amplification and switching 1 BASE MARKING G1 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Volt
mmbt5551q.pdf
RoHS COMPLIANT MMBT5551Q NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating and halogen free Moisture Sensitivity Level 1 High Voltage Transistors NPN Silicon Part no. with suffix Q means AEC-Q101 qualified Applications Linear amplification Mechanical Data SOT-23 Case Terminals Tin plated leads, solder
mmbt5551.pdf
RoHS COMPLIANT MMBT5551 NPN General Purpose Amplifier Features Epoxy meets UL-94 V-0 flammability rating Moisure Sensitivity Level 1 Marking G1 Maximum Rantings (Ta=25 ) Item Symbol Unit Conditions Value Collector-Emitter Voltage* VCEO V IC=1.0mAdc, IB=0 160 Collector-Base Voltage VCBO V IC=100uAdc, IE=0 180 Emitter-Base Voltage VEBO V IE=10uAdc, IC=0 6.0
mmbt5551.pdf
MMBT5551 MMBT5551 SOT-23 Plastic-Encapsulate Transistors(NPN) General description SOT-23 Plastic-Encapsulate Transistors(NPN) FEATURES Complementary to MMBT5401 Power Dissipation of 300mW High Stability and High Reliability SOT-23 Small Outline Plastic Package Epoxy UL 94V-0 DEVICE MARKING CODE Device Type Device Marking MMBT5551 G1 . Maximum Ra
mmbt5551.pdf
MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V IC Collector Curren
mmbt5551t.pdf
MMBT5551T TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching MARKING G1 MAXIMUM RATINGS (T =25 unless otherwise noted) A Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V V CEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 6 V I Collector Current -Continuous 0.6 A C P Collector Power Dissipation 200
mmbt5551.pdf
ANHUI FOSAN SEMICONDUCTOR TECHNOLOGY CO., LTD MMBT5551 FEATURES NPN High Voltage Transistor MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Emitter Voltage V 160 Vdc CEO - Collector Base Voltage V 180 Vdc CBO - Emitter
mmbt5551.pdf
MMBT5551 NPN GENERAL PURPOSE SWITCHING TRANSISTOR 160Volts POWER 300mWatts VOLTAGE FEATURES NPN epitaxial silicon, planar design. Collector-emitter voltage VCE=160V. Collector current IC=0.6A. ansition frequency fT>100MHz @ Tr IC=10mAdc, VCE=6Vdc, f=100MHz. In compliance with ER RoHS 2002/95/EC directives. MECHANICAL DATA Case SOT-23, Plastic 3 Terminals S
mmbt5551.pdf
MMBT5551 BIPOLAR TRANSISTOR (NPN) FEATURES Complementary to MMBT5401 Ideal for medium power amplification and switching Surface Mount device SOT-23 MECHANICAL DATA Case SOT-23 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.008 grams (approximate) MAXIMUM RATINGS (T = 25 C unless otherwise noted) A Parameter Symb
mmbt5551.pdf
NPN MMBT5551 MMBT5551 TRANSISTOR (NPN) FEATURES SOT-23 Complementary to MMBT5401 Ideal for medium power amplification and switching 1 BASE 2 EMITTER 3 COLLECTOR MARKING G1 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter
Другие транзисторы: MMBT3906-L, MMBT4401H, MMBT4403H, MMBT5401H, MMBT5401-H, MMBT5401-L, MMBT5551H, MMBT5551-H, TIP41, MMBTA42-L, MMBTA92H, MMBTA92J, MMBTA92-L, MMBTS8550H, MMBTS8550J, MMBTS8550L, MMBTSS8050H
History: 2N279 | BU323AP | KT368AM
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