Биполярный транзистор PXT8050-D2 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: PXT8050-D2
Маркировка: Y1
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 0.5 W
Макcимально допустимое напряжение коллектор-база (Ucb): 40 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 25 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 5 V
Макcимальный постоянный ток коллектора (Ic): 1.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 100 MHz
Ёмкость коллекторного перехода (Cc): 15(max) pf
Статический коэффициент передачи тока (hfe): 300
Корпус транзистора: SOT89
Аналоги (замена) для PXT8050-D2
PXT8050-D2 Datasheet (PDF)
pxt8050-c pxt8050-d pxt8050-d1 pxt8050-d2.pdf
PXT8050PXT8050PXT8050PXT8050 TRANSISTOR (NPN)SOT-89FEATURESCompliment to PXT8550 1. BASE MARKING: Y12. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VV Emitter-Base Voltage 5 VEBOI Collector Current -Continuous 1.5 ACP Collector Power dissipat
pxt8050-c-d-d3.pdf
PXT8050-CMCCMicro Commercial ComponentsTMPXT8050-D20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311PXT8050-D3Phone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Epoxy meets UL 94 V-0 flammability ratingNPN Silicon Moisture Sensitivity Level 1 Marking:Y1 Plastic-Encapsulate
pxt8050.pdf
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L PXT8050 TRANSISTOR (NPN) FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base V
pxt8050.pdf
PXT8 050TRANSISTOR(NPN)SOT-89 FEATURES Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) 3. EMITTER Symbol Parameter Value UnitsVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 6 VIC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ Junctio
pxt8050.pdf
PXT8050 SOT-89 Transistor(NPN)1. BASE 2. COLLECTOR 3. EMITTER SOT-894.6B4.41.61.8Features 1.41.4 Compliment to PXT8550 2.64.252.43.75 0.8MARKING: Y1 MIN0.530.400.480.442x)0.13 BMAXIMUM RATINGS (TA=25 unless otherwise noted) 0.35 0.371.53.0Symbol Parameter Value UnitsDimensions in inches and (millimeters)VCBO Collector-Base
pxt8050.pdf
Product specification PLASTIC-ENCAPSULATE TRANSISTORS PXT8050(NPN) FEATURES Commplimentray to PXT8550 Pb Lead-free APPLICATIONS This device is designed as a general purpose amplifier and switching. SOT-89 ORDERING INFORMATION Type No. Marking Package Code PXT8050 8050 SOT-89 : none is for Lead Free package; G is for Halogen Free package. MAX
pxt8050c pxt8050d.pdf
PXT8050NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 40 VCollector Emitter Voltage VCEO 25 VEmitter Base Voltage VEBO 6 VCollector Current IC 1.5 APower Dissipation Ptot 625
pxt8050.pdf
PXT8050SOT-89-3L PXT8050 TRANSISTOR (NPN)FEATURES Compliment to PXT85501. BASEMARKING: Y1 2. COLLECTORMAXIMUM RATINGS (Ta=25 unless otherwise noted) 3. EMITTERSymbol Parameter Value UnitVCBO Collector-Base Voltage 40 VVCEO Collector-Emitter Voltage 25 VVEBO Emitter-Base Voltage 5 VIC Collector Current -Continuous 1.5 A PC Collector Power dissipation 0.5 W TJ J
pxt8050.pdf
PXT8050BIPOLAR TRANSISTOR (NPN)FEATURES Complementary to PXT8550 Surface Mount deviceSOT-89MECHANICAL DATA Case: SOT-89 Case Material: Molded Plastic. UL flammability Classification Rating: 94V-0Weight: 0.055 grams (approximate)MAXIMUM RATINGS (T = 25C unless otherwise noted)AParameter Symbol Value UnitCollector-Base Voltage V 40 VCBOCollect
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