Биполярный транзистор 3DD13009E - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DD13009E
Маркировка: D13009E
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 100 W
Макcимально допустимое напряжение коллектор-база (Ucb): 700 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 400 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 9 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 4 MHz
Статический коэффициент передачи тока (hfe): 10
Корпус транзистора: TO220 TO3PB
Аналоги (замена) для 3DD13009E
3DD13009E Datasheet (PDF)
3dd13009e.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009E MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W CTO-220C-S1 TO-220C APPLICATIONS Energy-saving ligh Electronic ballasts High fre
3dd13009.pdf
3DD13009(NPN) TO-220 TransistorTO-2201. BASE 2. COLLECTOR 3. EMITTER 3 21Features power switching applications MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V Dimensions in inches and (millimeters)IC Collector Current -Contin
3dd13009k.pdf
NPN HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR R3DD13009K MAIN CHARACTERISTICS Package I 12A CV 400V CEOP (TO-220C) 100W CP (TO-3PB) 120W C APPLICATIONS Energy-saving ligh Electronic ballasts High frequency switching power
br3dd13009z8f.pdf
MJE13009Z8(BR3DD13009Z8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.
br3dd13009x8f.pdf
MJE13009X8(BR3DD13009X8F) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220F NPN Silicon NPN transistor in a TO-220F Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications.
br3dd13009x7r.pdf
MJE13009X7(BR3DD13009X7R) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-220 NPN Silicon NPN transistor in a TO-220 Plastic Package. / Features , High voltage capability, high speed switching. / Applications High frequency electronic lighting ballast applications .
br3dd13009x9p.pdf
MJE13009X9(BR3DD13009X9P) Rev.C Feb.-2015 DATA SHEET / Descriptions TO-3P NPN Silicon NPN Transistor in a TO-3P Plastic Package. / Features High Speed Switching / Applications High frequency electronic lighting ballast applications. / Equivalent Circuit
3dd13009a8.pdf
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13009c8.pdf
NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13009 x8d.pdf
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W
3dd13009 an.pdf
NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W
3dd13009 c8.pdf
NPN R 3DD13009 C8 3DD13009 C8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13009 a8.pdf
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13009an.pdf
NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W
3dd13009x8d.pdf
NPN R 3DD13009 X8D 3DD13009 X8D VCEO 200 V NPN IC 12 A Ptot TC=25 100 W
3dd13009a8.pdf
NPN R 3DD13009 A8 3DD13009 A8 NPN VCEO 400 V IC 12 A Ptot TC=25 100 W
3dd13009an.pdf
NPN R 3DD13009 AN 3DD13009 AN NPN VCEO 400 V IC 12 A Ptot TC=25 120 W
3dd13009an.pdf
3DD13009ANNPN Main Characteristics VCEO 400 V IC 12 A Ptot TC=25 120 W Applications Energy-saving light Electronic lamp ballasts Electronic transformer High frequency switching power supplyTO-3P Commonly power am
3dd13009k.pdf
isc Silicon NPN Power Transistor 3DD13009KDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighElectronic ballastsHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYM
3dd13009n.pdf
isc Silicon NPN Power Transistor 3DD13009NDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
3dd13009nl.pdf
isc Silicon NPN Power Transistor 3DD13009NLDESCRIPTIONHigh breakdown voltageHigh switching speedHigh current capabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSEnergy-saving lighHigh frequency switching power supplyHigh frequency power transformABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UN
3dd13009.pdf
INCHANGE Semiconductorisc Silicon NPN Power Transistor 3DD13009DESCRIPTIONCollectorEmitter Sustaining Voltage: V = 400V(Min.)CEO(SUS)Collector Saturation Voltage: V = 1.5 (Max) @ I = 8.0ACE(sat) CSwitching Time: t = 0.7s(Max.)@ I = 8.0Af C100% testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesig
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