Биполярный транзистор 3DD5017P - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 3DD5017P
Маркировка: 5017P
Тип материала: Si
Полярность: NPN
Максимальная рассеиваемая мощность (Pc): 50 W
Макcимально допустимое напряжение коллектор-база (Ucb): 1000 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 600 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 12 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 2 MHz
Статический коэффициент передачи тока (hfe): 15
Корпус транзистора: TO3P
3DD5017P Datasheet (PDF)
3dd5017p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5017P Package MAIN CHARACTERISTICSTO-3P(H)IS 1000 VBVCBO 12 AIC 0.5 V(max)VCE(sat) 0.3 s(max)tf APPLICATIONS Switching power Supply for color TV. F
3dd5011.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR 3DD5011 FOR LOW FREQUENCY AMPLIFICATION R3DD5011 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS BVCBO 900VIC 10 AVCE(sat) 0.5 V(max)
3dd5036.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036 FOR LOW FREQUENCY R3DD5036 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO8 A I C3 V(max) V
3dd5024p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5024P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 8AIC 3V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEATU
3dd5027.pdf
NPN WSRs_sQvfSO{HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORR3DD5027 ;NSpe MAIN CHARACTERISTICS \ Package IC 3AVCEO 800VPC(TO-220) 50W(u APPLICATIONS op Energy-saving ligh
3dd5032.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5032 FOR LOW FREQUENCY R3DD5032 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1500 V BVCBO 8 A Ic 3 V(max) Vce(sat)
3dd5032p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5032P Package MAIN CHARACTERISTICSTO-3P(H)IS 1500 VBVCBO 8 AIC 3 V(max)VCE(sat) 1s(max)tf APPLICATIONS Switching power Supply for color TV. FEATURE
3dd5039.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5039 FOR LOW FREQUENCY R3DD5039 \ Package ;NSpe MAIN CHARACTERISTICS TO-220HF 900 V BV CBO6 A I C1.0 V(max) V C
3dd5023p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5023 FOR LOW FREQUENCYR 3DD5023P Package MAIN CHARACTERISTICSTO-220HF 1500 VBVCBO 6 AIC 5 V(max)VCE(sat) 1 s(max)tf APPLICATIONS Horizontal deflection output for color TV.1 2 3 FEA
3dd5038p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5017P FOR LOW FREQUENCYR 3DD5038P Package MAIN CHARACTERISTICSTO-3P(H)IS 1200 VBVCBO 10 AIC 0.5 V(max)VCE(sat) 0.3s(max)tf APPLICATIONS Switching power Supply for color TV. FE
3dd5040.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5040 FOR LOW FREQUENCY R3DD5040 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1700 V BV CBO22 A I C3 V(max) V
3dd5038.pdf
NO>e'Y{X[vSgWvfSO{ CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5038 FOR LOW FREQUENCY R3DD5038 \ Package ;NSpe MAIN CHARACTERISTICS TO-3P(H)IS 1200 V BV CBO10 A I C0.5 V(max) V
3dd5036p.pdf
CASE-RATED BIPOLAR TRANSISTOR FOR TYPE 3DD5036P FOR LOW FREQUENCYR 3DD5036P Package MAIN CHARACTERISTICS TO-3P(H)IS1500 V BVCBO 10 A IC 3 V(max) VCE(sat) 0.6 s(max) tf APPLICATIONS Horizontal deflection output for color TV.B C E ENT
3dd5023.pdf
3DD5023 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte
3dd5024.pdf
3DD5024 NPN /SILICON NPN TRANSISTOR Application: Color TV Horizontal deflection output applications :, Features: High breakdown voltageLow drain currentHigh switching speedLow saturation voltageExcellent current characte
3dd50.pdf
3DD50/3DD51 NPN A B C D E F PCM TC=75 1 W ICM 1 A Tjm 175 Tstg -55~150 VCE=10V Rth 100 /W IC=0.1A V(BR)CBO ICB=1mA 30 50 80 110 150 200 V V(BR)CEO ICE=1mA 30 50 80 110 150 200 V V(BR)EBO IEB=1mA 5.0 V ICBO VCB=20V 0.2 mA
3dd505.pdf
Shaanxi Qunli Electric Co., Ltd 11:54:41 Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 2012-8-1 3DD505,BU104 NPN Silicon Low Frequency High Power Transistor Features: 1. Heavy working current.Good temperature stability.Excellent thermal fatigue capability. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,
3dd507.pdf
Shaanxi Qunli Electric Co., Ltd Add.:No. 1 Qunli Road,Baoji City,Shaanxi,China 3DD507NPN Silicon Low Frequency High Power Transistor Features: 1. Three pins isnt connected with the cover. It could be produced according to the requirement. 2. Implementation of standards: GJB33 A-97, QZJ840611A, QZJ840611 3. Use for Low-speed switch,low frequency power amplify,power adjustment. 4
Другие транзисторы... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Список транзисторов
Обновления
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS