2SA1292 - описание и поиск аналогов

Ordering number ENN2370A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1292/2SC3256 60V/15A High-Speed Switching Applications Applications Package Dimensions Various inductance, lamp drivers for electrical unit mm equipment. 2022A Inverters, converters (strobo, flash, fluorescent lamp [2SA1292/2SC3256] lighting circuit). 15.6 3.2 Power amp (high-power care stereo, mo

JMnic Product Specification Silicon PNP Power Transistors 2SA1292 DESCRIPTION With TO-3PN package Low saturation voltage. Fast switching time. Complement to type 2SC3256 APPLICATIONS Various inductance, lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION 1 Base Collector;connecte

isc Silicon PNP Power Transistor 2SA1292 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -7.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3256 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters,converters(strobo,flash,fluorescent l

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit mm Power Switching Applications High DC current gain hFE = 100 320 Low saturation voltage V = -0.4 V (max) CE (sat) (I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO

2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3267. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit mm Power Switching Applications High DC current gain hFE = 100 to 320 Low saturation voltage VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

Ordering number ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010C Inverters, converters (strobo, flash, fluorescent lamp [2SA1291/2SC3255] lighting circuit). 10.2 4.5 Power amp (high power car stereo, moto

Ordering number ENN1200D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1290/2SC3254 60V/7A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010C Inverters, converters (strobo, flash, fluorescent lamp [2SA1290/2SC3254] lighting circuit). 10.2 4.5 3.6 5.1 Power amp (high power car ste

MCC 2SA1298-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1298-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

MCC 2SA1298-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1298-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

2SA1298 Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1) PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Purpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless

2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L 3 3 Top View C B CLASSIFICATION OF hFE (1) 1 1 2 Product-Rank 2SA1298-O 2SA1298-Y 2 K E Range 100 20

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage VCE(sat) High DC Current Gain G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1296-Y 2SA1296-GR Millimeter REF. B Min. Max.

JMnic Product Specification Silicon PNP Power Transistors 2SA1291 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. Complement to type 2SC3255 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION 1 Emitter Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION With TO-220 package Short switching time Low collector saturation voltage Complement to type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters,converters Power amplifier Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Co

JMnic Product Specification Silicon PNP Power Transistors 2SA1294 DESCRIPTION With TO-3PN package Complement to type 2SC3263 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1293 DESCRIPTION With TO-220 package Complement to type 2SC3258 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAM

LAPT 2SA1294 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 VCBO 230 V ICBO VCB= 230V 100max A 9.6 2.0 VCEO 230 V IEBO VEB=

LAPT 2SA1295 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application Audio and General (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 230 V ICBO VCB= 230V 100max A 0.2 24.4 2.1 VCEO V IEBO VEB= 5V 100max

2SA1 298 TRANSISTOR(PNP) SOT 23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO 3. COLLECTOR V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -800 mA C

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-PNP

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-

SMD Type Transistors PNP Transistors 2SA1298 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-0.8A 1 2 Collector Emitter Voltage VCEO=-30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications 1.Base Complementary to 2SC3265 2.Emitter 3.collecto

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1290 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescent lamp lighting circuits). Power amplifier (high p

isc Silicon PNP Power Transistor 2SA1291 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3255 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescent

isc Silicon PNP Power Transistor 2SA1290 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescent lamp lighting circuits). Power amplifier (high power car stereo, motor controller

isc Silicon PNP Power Transistor 2SA1294 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3263 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1293 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C Fast Switching Speed Complement to Type 2SC3258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA