Биполярный транзистор 2SA1296 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1296
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.75 W
Макcимально допустимое напряжение коллектор-база (Ucb): 20 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 20 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 6 V
Макcимальный постоянный ток коллектора (Ic): 2 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Ёмкость коллекторного перехода (Cc): 120 pf
Статический коэффициент передачи тока (hfe): 120
Корпус транзистора: TO92
2SA1296 Datasheet (PDF)
2sa1296.pdf
2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO
2sa1296.pdf
2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation VoltageVCE(sat) High DC Current Gain G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1296-Y 2SA1296-GR MillimeterREF.B Min. Max.
2sa1298.pdf
2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mm Power Switching Applications High DC current gain: hFE = 100~320 Low saturation voltage: V = -0.4 V (max) CE (sat)(I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max
2sa1297.pdf
2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit: mm Power Switching Applications Low saturation voltage: VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3267. Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -20 VCollector-emitter voltage VCEO
2sa1298o 2sa1298y.pdf
2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit: mmPower Switching Applications High DC current gain: hFE = 100 to 320 Low saturation voltage: VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu
2sa1291.pdf
Ordering number:ENN1201DPNP/NPN Epitaxial Planar Silicon Transistors2SA1291/2SC325560V/10A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1291/2SC3255]lighting circuit).10.24.5 Power amp (high power car stereo, moto
2sa1290.pdf
Ordering number:ENN1200DPNP/NPN Epitaxial Planar Silicon Transistors2SA1290/2SC325460V/7A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2010C Inverters, converters (strobo, flash, fluorescent lamp[2SA1290/2SC3254]lighting circuit).10.24.53.65.1 Power amp (high power car ste
2sa1292.pdf
Ordering number:ENN2370APNP/NPN Epitaxial Planar Silicon Transistors2SA1292/2SC325660V/15A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance, lamp drivers for electricalunit:mmequipment.2022A Inverters, converters (strobo, flash, fluorescent lamp[2SA1292/2SC3256]lighting circuit).15.63.2 Power amp (high-power care stereo, mo
2sa1298-o.pdf
MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin
2sa1298-y.pdf
MCC2SA1298-OTM Micro Commercial Components20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1298-YPhone: (818) 701-4933Fax: (818) 701-4939Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin
2sa1298.pdf
2SA1298Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1)PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability RatingPurpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25C Unless
2sa1298.pdf
2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L33Top View C BCLASSIFICATION OF hFE (1) 11 2Product-Rank 2SA1298-O 2SA1298-Y 2K ERange 100~20
2sa1291.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1291 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. Complement to type 2SC3255 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Emitter Colle
2sa1290.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION With TO-220 package Short switching time Low collector saturation voltage Complement to type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters,converters Power amplifier Switching regulator ,driver PINNING PIN DESCRIPTION1 Emitter Co
2sa1294.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1294 DESCRIPTION With TO-3PN package Complement to type 2SC3263 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT
2sa1293.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1293 DESCRIPTION With TO-220 package Complement to type 2SC3258 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas
2sa1292.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1292 DESCRIPTION With TO-3PN package Low saturation voltage. Fast switching time. Complement to type 2SC3256 APPLICATIONS Various inductance, lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION1 Base Collector;connecte
2sa1295.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAM
2sa1294.pdf
LAPT 2SA1294Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263)Application : Audio and General Purpose(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-100(TO3P)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.1VCBO 230 V ICBO VCB=230V 100max A 9.6 2.0VCEO 230 V IEBO VEB=
2sa1295.pdf
LAPT 2SA1295Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264)Application : Audio and General(Ta=25C) Absolute maximum ratings (Ta=25C) Electrical Characteristics External Dimensions MT-200Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 230 V ICBO VCB=230V 100max A0.224.42.1VCEO V IEBO VEB=5V 100max
2sa1298.pdf
2SA1 298TRANSISTOR(PNP)SOT23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO3. COLLECTOR V Collector-Emitter Voltage -30 V CEOV Emitter-Base Voltage -5 V EBOI Collector Current -800 mA C
2sc3264 2sa1295.pdf
Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEONPN-PNP Complementary NPN-PNP
2sa1295 2sc3264.pdf
Complementary NPN-PNP Power Bipolar Transistor R2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltageV =230V (min) CEO CEO NPN-PNP Complementary NPN-
2sa1298.pdf
SMD Type TransistorsPNP Transistors2SA1298SOT-23Unit: mm+0.12.9 -0.1+0.10.4-0.13 Features Collector Current Capability IC=-0.8A1 2 Collector Emitter Voltage VCEO=-30V+0.1+0.050.95 -0.1 0.1 -0.01+0.11.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications1.Base Complementary to 2SC32652.Emitter3.collecto
2sa1290q 2sa1290r 2sa1290s.pdf
SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1290DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3254APPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent lamp lightingcircuits).Power amplifier (high p
2sa1291.pdf
isc Silicon PNP Power Transistor 2SA1291DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -5ACE(sat) CFast Switching SpeedComplement to Type 2SC3255Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent
2sa1290.pdf
isc Silicon PNP Power Transistor 2SA1290DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3254APPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters, converters(strobo, flash, fluorescent lamp lightingcircuits).Power amplifier (high power car stereo, motor controller
2sa1294.pdf
isc Silicon PNP Power Transistor 2SA1294DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3263Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sa1293.pdf
isc Silicon PNP Power Transistor 2SA1293DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CFast Switching SpeedComplement to Type 2SC3258Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL
2sa1292.pdf
isc Silicon PNP Power Transistor 2SA1292DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -7.5ACE(sat) CFast Switching SpeedComplement to Type 2SC3256Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for electrical equipment.Inverters,converters(strobo,flash,fluorescent l
2sa1295.pdf
isc Silicon PNP Power Transistor 2SA1295DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -230V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3264Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA
Другие транзисторы... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050