2SA12H - описание и поиск аналогов

2SA1200 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1200 High Voltage Switching Applications Unit mm High voltage VCEO = -150 V High transition frequency f = 120 MHz (typ.) T Small flat package P = 1 to 2 W (mounted on ceramic substrate) C Complementary to 2SC2880 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating

2SA1201 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1201 Voltage Amplifier Applications Unit mm Power Amplifier Applications High voltage VCEO = -120 V High transition frequency f = 120 MHz (typ.) T Small flat package P C = 1 to 2 W (mounted on ceramic substrate) Complementary to 2SC2881 Maximum Ratings (Ta = 25 C) Characteri

2SA1202 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1202 Power Amplifier Applications Unit mm Voltage Amplifier Applications Suitable for driver of 30 to 35 watts audio amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2882 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit

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2SA1203 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1203 Audio Frequency Amplifier Applications Unit mm Suitable for output stage of 3 watts amplifier Small flat package P = 1.0 to 2.0 W (mounted on ceramic substrate) C Complementary to 2SC2883 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO

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2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High speed switching time tstg = 1.0 s (typ.) Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Complementary to 2SC2873 Absolut

2SA1255 TOSHIBA Transistor Silicon PNP Triple Diffused (PCT process) 2SA1255 High Voltage Switching Applications Unit mm High voltage VCBO = -200 V (min) V = -200 V (min) CEO Small package Complementary to 2SC3138 Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -200 V

2SA1242 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1242 Strobe Flash Applications Unit mm Medium Power Amplifier Applications Excellent hFE linearity h = 100 to 320 (V = -2 V, I = -0.5 A) FE (1) CE C h = 70 (min) (V = -2 V, I = -4 A) FE (2) CE C Low collector saturation voltage V = -1.0 V (max) (I = -4 A, I = -0.1 A) CE (sat) C B

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit mm Power Switching Applications High DC current gain hFE = 100 320 Low saturation voltage V = -0.4 V (max) CE (sat) (I = -500 mA, I = -20 mA) C B Suitable for driver stage of small motor Complementary to 2SC3265 Small package Max

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2SA1245 TOSHIBA Transistor Silicon PNP Epitaxial Planar Type 2SA1245 High Frequency Amplifier and Switching Applications Unit mm VHF UHF Band Low Noise Amplifier Applications Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO -8 V Emitter-base voltage VEBO -2 V Collector current IC -30 mA

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2SA1204 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1204 Audio Frequency Amplifier Applications Unit mm High DC current gain hFE = 100 to 320 Suitable for output stage of 1 watts amplifier Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2884 Maximum Ratings (Ta = 25 C) Characteristics Symbol

2SA1225 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1225 Power Amplifier Applications Unit mm Driver Stage Amplifier Applications High transition frequency fT = 100 MHz (typ.) Complementary to 2SC2983 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -160 V Collector-emitter voltage VCEO -160 V Emitter-

2SA1296 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1296 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3266. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO

2SA1244 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1244 High Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (I = -3 A) C High speed switching time t = 1.0 s (typ.) stg Complementary to 2SC3074 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -60

2SA1213 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1213 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) (I C = -1 A) High speed switching time t = 1.0 s (typ.) stg Small flat package PC = 1.0 to 2.0 W (mounted on ceramic substrate) Complementary to 2SC2873 Max

2SA1297 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1297 Power Amplifier Applications Unit mm Power Switching Applications Low saturation voltage VCE (sat) = -0.5 V (max) @I = -2 A C Complementary to 2SC3267. Maximum Ratings (Ta = = 25 C) = = Characteristics Symbol Rating Unit Collector-base voltage VCBO -20 V Collector-emitter voltage VCEO

2SA1241 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1241 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (I = -1 A) C Excellent switching time t = 1.0 s (typ.) stg Complementary to 2SC3076 Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collecto

2SA1298 TOSHIBA Transistor Silicon PNP Epitaxial (PCT process) 2SA1298 Low Frequency Power Amplifier Application Unit mm Power Switching Applications High DC current gain hFE = 100 to 320 Low saturation voltage VCE (sat) = -0.4 V (max) (IC = -500 mA, IB = -20 mA) Suitable for driver stage of small motor Complementary to 2SC3265 Small package Absolu

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Ordering number ENN1201D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1291/2SC3255 60V/10A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010C Inverters, converters (strobo, flash, fluorescent lamp [2SA1291/2SC3255] lighting circuit). 10.2 4.5 Power amp (high power car stereo, moto

Ordering number ENN1032B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1248/2SC3116 160V/700mA Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1248/2SC3116] High breakdown voltage. 8.0 2.7 4.0 Large current capacity. Using MBIT process 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2 Co

Ordering number EN1056C PNP Epitaxial Planar Silicon Transistors 2SA1256 High Frequency Amp Applications Applications Package Dimensions Ideally suited for use in FM RF amplifiers, mixers, unit mm oscillators, converters, and IF amplifiers. 2018B [2SA1256] Features High fT (230MHz typ), and small Cre (1.1pF typ). Small NF (2.5dB typ). 1 Base 2 Emitter 3 Collecto

Ordering number ENN1200D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1290/2SC3254 60V/7A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010C Inverters, converters (strobo, flash, fluorescent lamp [2SA1290/2SC3254] lighting circuit). 10.2 4.5 3.6 5.1 Power amp (high power car ste

Ordering number ENN1060C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1249/2SC3117 160V/1.5A Switching Applications Uses Package Dimensions Color TV sound output, converters, inverters. unit mm 2009B Features [2SA1249/2SC3117] 8.0 High breakdown voltage. 2.7 4.0 Large current capacity. Adoption of MBIT process. 3.0 1.6 0.8 0.8 0.6 0.5 1 Emitter 1 2 3 2

Ordering number ENN1049E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1253/2SC3135 High-hFE, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2033A [2SA1253/2SC3135] 2.2 4.0 0.4 0.5 0.4 0.4 1 2 3 1.3 1.3 1 Emitter 2 Collector ( ) 2SA1253 3 Base 3.0 3.8 SANYO SPA Specifications Absolut

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Ordering number ENN1057C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1257/2SC3143 High-Voltage Switching, AF Power Amp, 100W Output Predriver Applications Features Package Dimensions Very small-sized package permitting the 2SA1257/ unit mm 2SC3143-applied sets to be made small and slim. 2018B High breakdown voltage (VCEO 160V). [2SA1257/2SC3143] Small output capac

Ordering number ENN779D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009B Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. 8.0 2.7 4.0 3.0 1.6 0.8 0.8 0.6 0.5

Ordering number EN779C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1209/2SC2911 160V/140mA High-Voltage Switching and AF 100W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2009A Good linearity of hFE and small Cob. [2SA1209/2SC2911] Fast switching speed. Switching Test Circuit IC=10IB1= 10IB2=10mA

Ordering number ENN778F PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2003B Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter

Ordering number ENN1048C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1252/2SC3134 High VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and high durability against breakdown. 2018B [2SA1252/2SC3134] 0.4 0.16 3 0 to 0.1 1 0.95 0.95 2 1.9 2.9 1 Base 2 Emitter ( ) 2SA1252 3 Collector SANYO CP Specifications Absolute Maxim

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Ordering number ENN781G PNP/NPN Epitaxial Planar Silicon Transistors 2SA1208/2SC2910 High-Voltage Switching Audio 80W Output Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2006B Excellent linearity of hFE and small Cob. [2SA1208/2SC2910] Fast swtching speed. 6.0 5.0 4.7 0.5 0.6 0.5 0.5 1 2 3 1 Emi

Ordering number ENN2370A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1292/2SC3256 60V/15A High-Speed Switching Applications Applications Package Dimensions Various inductance, lamp drivers for electrical unit mm equipment. 2022A Inverters, converters (strobo, flash, fluorescent lamp [2SA1292/2SC3256] lighting circuit). 15.6 3.2 Power amp (high-power care stereo, mo

Ordering number ENN1047C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1246/2SC3114 High-VEBO, AF Amp Applications Features Package Dimensions High VEBO. unit mm Wide ASO and highly resistant to breakdown. 2003B [2SA1246/2SC3114] 5.0 4.0 4.0 0.45 0.5 0.44 0.45 1 2 3 1 Emitter 2 Collector ( ) 2SA1246 3 Base 1.3 1.3 SANYO NP Specifications Absolute Maxim

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Ordering number ENN1059D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1259/2SC3145 60V/5A for High-Speed Drivers Applications Features Package Dimensions High fT. unit mm High switching speed. 2010C Wide ASO. [2SA1259/2SC3145] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 1 2 3 2 Collector ( ) 2SA1259 3 Emitter 2.55 2.55 SANYO TO-220AB Sp

Ordering number ENN1199D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1289/2SC3253 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2010C Inverters, converters (strobo, flash, fluorescent lamp [2SA1289/2SC3253] lighting circuit). 10.2 4.5 3.6 5.1 Power amp (high power car ste

Ordering number ENN1058D PNP/NPN Epitaxial Planar Silicon Darlington Transistors 2SA1258/2SC3144 60V/3A for High-Speed Drivers Applications Features Package Dimensions High fT. unit mm High switching speed. 2010C Wide ASO. [2SA1258/2SC3144] 10.2 4.5 3.6 5.1 1.3 1.2 0.8 0.4 1 Base 1 2 3 2 Collector ( ) 2SA1258 3 Emitter 2.55 2.55 SANYO TO-220AB Spe

Ordering number EN778E PNP/NPN Epitaxial Planar Silicon Transistors 2SA1207/2SC2909 High-Voltage Switching AF 60W Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage. 2003A Excellent linearity of hFE and small Cob. [2SA1207/2SC2909] Fast switching speed. JEDEC TO-92 B Base ( ) 2SA1207 EIAJ SC-43 C Collector

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DATA SHEET SILICON TRANSISTORS 2SA1221, 1222 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS FEATURES PACKAGE DRAWING (UNIT mm) Ideal for use of high withstanding voltage current such as TV vertical deflection output, audio output, and variable power supplies. Complementary transistor with 2SC2958 and 2SC2959 VCEO = 140 V 2SA1221/2SC2958 VCEO = 160 V 2S

MCC 2SA1298-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1298-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

MCC 2SA1298-O TM Micro Commercial Components 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1298-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Power switching application Low frequency power amplifier application PNP General Epoxy meets UL 94 V-0 flammability rating Moisure Sensitivity Level 1 Purpose Amplifier Lead Free Fin

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

2SA1213-O/2SA1213-Y Electrical Characteristics @ 25 C Unless Otherwise Specified Parameter Symbol Min Typ Max Units Conditions V(BR)CBO -50 IC=-100 A, IE=0 Collector-Base Breakdown Voltage V V(BR)CEO -50 IC=-10mA, IB=0 Collector-Emitter Breakdown Voltag V V(BR)EBO -5 IE=-100 A, IC=0 Emitter-Base Breakdown Voltage V ICBO VCB=-50V, IE=0 Collector-Base Cutoff Current -0.1 A IEB

2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Low Saturation voltage VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

2SA1298 Features Power Switching Application Low Frequency Power Amplifier Application Halogen Free. Green Device (Note 1) PNP General Moisture Sensitivity Level 1 Epoxy Meets UL 94 V-0 Flammability Rating Purpose Amplifier Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information) Maximum Ratings @ 25 C Unless

2SA1213-O MCC TM Micro Commercial Components Micro Commercial Components 20736 Marilla Street Chatsworth 2SA1213-Y CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates PNP Silicon RoHS Compliant. See ordering information) Low Saturation voltage VCE(sat)=0.5V(max.)(IC=1.0A) Epitaxial Transistors Small

MCC 2SA1201-O Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components CA 91311 2SA1201-Y Phone (818) 701-4933 Fax (818) 701-4939 Features Lead Free Finish/RoHS Compliant ("P" Suffix designates RoHS Compliant. See ordering information) PNP Silicon Power amplifier applications Power Transistors Epoxy meets UL 94 V-0 flammability

Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2206 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 A

Transistor 2SA1254 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2206 6.9 0.1 2.5 0.1 1.5 1.5 R0.9 1.0 Features R0.9 High transition frequency fT. Low collector to emitter saturation voltage VCE(sat). M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.85 A

UNISONIC TECHNOLOGIES CO., LTD 2SA1201 Preliminary PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1201 is designed for power amplifier and voltage amplifier applications. FEATURES *High voltage VCEO= -120V *High transition frequency fT=120MHz(typ.) *Pc=1 to 2 W(mounted on ceramic substrate) ORDERING INFORMATION Ordering Numb

2SA1201 PNP Silicon Elektronische Bauelemente Epitaxial Planar Transistor RoHS Compliant Product SOT-89 FEATURES E C B High voltage High transition frequency Complementary to 2SC2881 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V Millimeter Millimeter REF.

2SA1235A -0.2A , -60V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Collector Current A Low Collector Power Dissipation L 3 3 Top View C B CLASSIFICATION OF hFE (1) 1 1 2 2 Product-Rank 2SA1235A-ME 2SA1235A-MF K E Range 150 300 250 500 D Ma

2SA1298 -0.8A , -35V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-23 FEATURES Low Frequency Power Amplifier Application A Power Switching Applications L 3 3 Top View C B CLASSIFICATION OF hFE (1) 1 1 2 Product-Rank 2SA1298-O 2SA1298-Y 2 K E Range 100 20

2SA1296 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES Low Saturation Voltage VCE(sat) High DC Current Gain G H Emitter Collector Base J CLASSIFICATION OF hFE(1) A D Product-Rank 2SA1296-Y 2SA1296-GR Millimeter REF. B Min. Max.

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

DONG GUAN SHI HUA YUAN ELECTRON CO.,LTD. TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189 SOT-23 Plastic-Encapsulate Transistors SOT 23 1. BASE 2SA1235A TRANSISTOR PNP 2. EMITTER 3. COLLECTOR FEATURES Power dissipation 2.4 PCM 0.2 W Tamb=25 1.3 Collector current ICM -0.2 A Collector-base voltage V

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1201 TRANSISTOR (PNP) 1. BASE FEATURES High voltage 2. COLLECTOR High transition frequency Complementary to 2SC2881 3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO -120 Collector-Base Voltage V VCEO -120

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1203 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VC

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors 2SA1235A TRANSISTOR (PNP) SOT 23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -60 V CBO 3. COLLECTOR V Collector-Emitter Voltage -50 V C

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1204 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collecto

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1225 TRANSISTOR (PNP) TO-252-2L FEATURES 1. BASE High Transition Frequency Complementary to 2SC2983 2. COLLECTOR 3 .EMITTER APPLICATIONS Power Amplifier Applications Driver Stage Amplifier Applications Equivalent Circuit A1225=Device code A1225 Solid dot=Gre

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L 2SA1213 TRANSISTOR (PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbo

JMnic Product Specification Silicon PNP Power Transistors 2SA1291 DESCRIPTION With TO-220 package Low collector saturation voltage. Short switching time. Complement to type 2SC3255 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION 1 Emitter Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1250 DESCRIPTION With TO-66 package Excellent safe operating area High breadown voltage APPLICATIONS For general-purpose amplifier ; and switching applications PINNING(see Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-66) and symbol 3 Collector Absolute maximum ratings(Ta= )

JMnic Product Specification Silicon PNP Power Transistors 2SA1261 DESCRIPTION With TO-220 package High switching speed Low collector saturation voltage Complement to type 2SC3157 APPLICATIONS For high voltage ,high speed and power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector Fig.1 simplified outline (TO-220) and symbol 3 Base Absolu

JMnic Product Specification Silicon PNP Power Transistors 2SA1215 DESCRIPTION With MT-200 package Complement to type 2SC2921 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon PNP Power Transistors 2SA1290 DESCRIPTION With TO-220 package Short switching time Low collector saturation voltage Complement to type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters,converters Power amplifier Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Co

JMnic Product Specification Silicon PNP Power Transistors 2SA1262 DESCRIPTION With TO-220 package Complement to type 2SC3179 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Fig.1 simplified outline (TO-220) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1217 DESCRIPTION With TO-126 package Complement to type 2SC2877 Good linearity of hFE APPLICATIONS Audio frequency power amplifier Low speed switching Suitable for output stage of 5 watts car radio and car stereo PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Ba

JMnic Product Specification Silicon PNP Power Transistors 2SA1232 DESCRIPTION With TO-3PFa package Complement to type 2SC3012 APPLICATIONS Audio frequency power amplifier. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitt

JMnic Product Specification Silicon PNP Power Transistors 2SA1249 DESCRIPTION With TO-126 package Complement to type 2SC3117 High breakdown voltage Large current capacity APPLICATIONS For color TV sound output,converters, Inverters applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=2

JMnic Product Specification Silicon PNP Power Transistors 2SA1205 DESCRIPTION With TO-3PN package High power dissipation APPLICATIONS For general purpose applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UN

JMnic Product Specification Silicon PNP Power Transistors 2SA1294 DESCRIPTION With TO-3PN package Complement to type 2SC3263 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1263N DESCRIPTION With TO-3P(I) package Complement to type 2SC3180N 2SA1263 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S

JMnic Product Specification Silicon PNP Power Transistors 2SA1209 DESCRIPTION With TO-126 package Complement to type 2SC2911 High breakdown voltage Fast switching speed APPLICATIONS High-voltage switching and AF 100W predriver applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 )

JMnic Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1280 DESCRIPTION With TO-220F package High breakdown voltage High power dissipation APPLICATIONS For use in low frequency power amplifier Color TV vertical deflection output PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=

JMnic Product Specification Silicon PNP Power Transistors 2SA1293 DESCRIPTION With TO-220 package Complement to type 2SC3258 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1265N DESCRIPTION With TO-3P(I) package Complement to type 2SC3182 2SA1265 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SY

JMnic Product Specification Silicon PNP Power Transistors 2SA1292 DESCRIPTION With TO-3PN package Low saturation voltage. Fast switching time. Complement to type 2SC3256 APPLICATIONS Various inductance, lamp drivers for electrical equipment. Inverters, converters Power amplifier High-speed switching PINNING PIN DESCRIPTION 1 Base Collector;connecte

JMnic Product Specification Silicon PNP Power Transistors 2SA1295 DESCRIPTION With MT-200 package Complement to type 2SC3264 APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAM

JMnic Product Specification Silicon PNP Power Transistors 2SA1279 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collec

JMnic Product Specification Silicon PNP Power Transistors 2SA1216 DESCRIPTION With MT-200 package Complement to type 2SC2922 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIO

JMnic Product Specification Silicon PNP Power Transistors 2SA1220 2SA1220A DESCRIPTION With TO-126 package Complement to type 2SC2690/2690A APPLICATIONS Audio frequency power amplifier High frequency power amplifier PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITION

JMnic Product Specification Silicon PNP Power Transistors 2SA1289 DESCRIPTION With TO-220 package Complement to type 2SC3253 Low saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collecto

JMnic Product Specification Silicon PNP Power Transistors 2SA1276 DESCRIPTION With TO-220 package Complement to type 2SC3230 Good linearity of hFE APPLICATIONS General purpose applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL P

JMnic Product Specification Silicon PNP Power Transistors 2SA1288 DESCRIPTION With TO-220 package Low collector saturation voltage Short switching time APPLICATIONS Various inductance lamp drivers for electrical equipment Inverters;converters Power amplification Switching regulator ,driver PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2

JMnic Product Specification Silicon PNP Power Transistors 2SA1264N DESCRIPTION With TO-3P(I) package Complement to type 2SC3181N 2SA1264 with short pin APPLICATIONS Power amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3P(I)) and symbol 3 Base Absolute maximum ratings(Ta=25 ) S

LAPT 2SA1215 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2921) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 160 V ICBO VCB= 160V 100max A 0.2 24.4 2.1 VCEO 160 V IEBO VEB=

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LAPT 2SA1294 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3263) Application Audio and General Purpose (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-100(TO3P) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 VCBO 230 V ICBO VCB= 230V 100max A 9.6 2.0 VCEO 230 V IEBO VEB=

LAPT 2SA1295 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3264) Application Audio and General (Ta=25 C) Absolute maximum ratings (Ta=25 C) Electrical Characteristics External Dimensions MT-200 Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 230 V ICBO VCB= 230V 100max A 0.2 24.4 2.1 VCEO V IEBO VEB= 5V 100max

LAPT 2SA1216 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC2922) Application Audio and General Purpose Electrical Characteristics (Ta=25 C) External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Symbol Ratings Unit SymboI Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 180 V VCBO VCB= 180V 100max A 0.2 24.4 2.1 0.1 VCEO 180 V IEBO

2SA1 201 SOT-89 TRANSISTOR(PNP) 1. BASE FEATURES High voltage 2. COLLECTOR 1 High transition frequency 2 Complementary to 2SC2881 3. EMITTER 3 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO -120 Collector-Base Voltage V VCEO -120 Collector-Emitter Voltage V VEBO -5 Emitter-Base Voltage V IC Collector Current -Co

2SA1 203 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2883 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -30 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC Collector Current -1.5 A

2SA1 235A TRANSISTOR(PNP) SOT 23 FEATURES Low Collector Current Low Collector Power Dissipation MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER VCBO Collector-Base Voltage -60 V 3. COLLECTOR V Collector-Emitter Voltage -50 V CEO V Emitter-Base Voltage -6 V EBO I Collector Current -200 mA C P Collector Powe

2SA1 298 TRANSISTOR(PNP) SOT 23 FEATURES Low Frequency Power Amplifier Application Power Swithing Applications MAXIMUM RATINGS (Ta=25 unless otherwise noted) 1. BASE Symbol Parameter Value Unit 2. EMITTER V Collector-Base Voltage -35 V CBO 3. COLLECTOR V Collector-Emitter Voltage -30 V CEO V Emitter-Base Voltage -5 V EBO I Collector Current -800 mA C

2SA1 204 SOT-89-3L TRANSISTOR(PNP) 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2884 Small Flat Package 3. EMITTER Audio Frequency Amplifier Application High DC Current Gain MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -35 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -5 V IC

2SA1 21 3 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES 2. COLLECTOR Complementary to 2SC2873 Small Flat Package 3. EMITTER Power Amplifier and Switching Applications Low Saturation Voltage High Speed Switching Time MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -50 V VCEO Collector-Emitter Voltage -50 V

2SA1242(PNP) TO-251/TO-252-2L Transistor TO-251 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Features Strobe Flash Applications Medium Power Amplifier Applications Excellent hFE linearity hFE (1) = 100 to 320 (VCE = -2 V, IC = -0.5 A) hFE (2) = 70 (min) (VCE = -2 V, IC = -4 A) TO-252-2L Low collector saturation voltage VCE (sat) = -1.0 V (max) (IC = -4 A, IB = -0.1

2SA1201 SOT-89 Transistor(PNP) 1. BASE SOT-89 2. COLLECTOR 1 4.6 B 4.4 1.6 1.8 2 1.4 1.4 3. EMITTER 3 2.6 4.25 Features 2.4 3.75 0.8 High voltage MIN 0.53 High transition frequency 0.40 0.48 0.44 2x) 0.13 B 0.35 0.37 1.5 Complementary to 2SC2881 3.0 MAXIMUM RATINGS (TA=25 unless otherwise noted) Dimensions in inches and (millimeters) Symbol P

FM120-M WILLAS THRU 2SA1201 SOT-89 Plastic-Encapsulate Transistors FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better rever SOD-123H TRANSISTOR se leakage current and thermal resistance. (PNP) Low profile surface mounted applica

2SA1213 -89 Plastic-Encapsulate Transistors SOT TRANSISTOR (PNP) SOT-89 FEATURES Small Flat Package 1. BASE Power Amplifier and Switching Applications 2. COLLECTOR Low Saturation Voltage High Speed Switching Time 3. EMITTER Pb-Free package is available RoHS product for packing code suffix "G" Halogen free product for packing code suffix "H" MAXIMUM RATINGS (T

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-PNP

Complementary NPN-PNP Power Bipolar Transistor R 2SC3264(NPN) 2SA1295(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =230V (min) High collector voltage V =230V (min) CEO CEO NPN-PNP Complementary NPN-

Complementary NPN-PNP Power Bipolar Transistor R 2SC2921(NPN) 2SA1215(PNP) APPLICATIONS High fidelity audio amplifier and other linear applications FEATURES V =160V (min) High collector voltage V =160V (min) CEO CEO NPN-PNP Complementary NPN-

ST 2SA1213U PNP Silicon Epitaxial Planar Transistor for power amplifier and power switching applications The transistor is subdivided into two groups, O and Y, according to its DC current gain. Absolute Maximum Ratings (Ta = 25 ) Parameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 50 V Emitter Base Voltage -VEBO 5 V Collector C

SMD Type Transistors PNP Transistors 2SA1200 Features 1.70 0.1 High Voltage VCEO = -150V High Transition Frequency fT = 120MHz(typ.) Small Flat Package Complementary to 2SC2880 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Emitter Voltage VCEO -150 V Collector-Base Voltage VCBO -150 V Emitter-Base Vol

SMD Type or SMD Type TransistICs PNP Transistors 2SA1256 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High fT (230MHz typ), and small Cre (1.1pF typ). 1 2 Small NF (2.5dB typ). +0.1 0.95-0.1 0.1+0.05 -0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -30 V Collector-emitter

SMD Type Transistors PNP Transistors 2SA1201 1.70 0.1 Features High voltage High transition frequency Complementary to 2SC2881 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -120 V Emitter - Base Voltage VEBO -5 Collect

SMD Type Transistors PNP Transistors 2SA1202 1.70 0.1 Features Suitable for Driver of 30 to 35 Watts Audio Amplifier Small Flat Package 0.42 0.1 PC = 1 to 2W (mounted on ceramic substrate) 0.46 0.1 Complementary to 2SC2882 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -80 V Collector-Emitter Voltage VCEO -

SMD Type Transistors PNP Transistors 2SA1203 1.70 0.1 Features Suitable For Output Stage of 3 Watts Amplifier Small Flat Package 0.42 0.1 0.46 0.1 PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2883 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -30 V

SMD Type Transistors PNP Transistors 2SA1257 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features High breakdown voltage. Small output capacitance. 1 2 Very small-sized package permitting the 2SA1257/ +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 2SC3143-applied sets to be made small and slim. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter

SMD Type or SMD Type TransistICs PNP Transistors 2SA1252 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High VEBO. 1 2 Wide ASO and high durability against breakdown. +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC3134 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -60

SMD Type or SMD Type TransistICs PNP Transistors 2SA1235 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Small collector to emitter saturation voltage. 1 2 +0.1 Excelent lineary DC forward current gain. +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 Super mini package for easy mounting. 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Un

SMD Type Transistors PNP Transistors 2SA1298 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-0.8A 1 2 Collector Emitter Voltage VCEO=-30V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 Low Frequency Power Amplifier Application Power Swithing Applications 1.Base Complementary to 2SC3265 2.Emitter 3.collecto

SMD Type Transistors PNP Transistors 2SA1245 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4-0.1 3 Features Collector Current Capability IC=-30mA 1 2 Collector Emitter Voltage VCEO=-8V +0.1 +0.05 0.95 -0.1 0.1 -0.01 +0.1 1.9 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -15 Col

SMD Type Transistors PNP Transistors 2SA1204 1.70 0.1 Features Suitable For Output Stage of 1 Watts Amplifier Small Flat Package PC = 1 to 2W (mounted on ceramic substrate) 0.42 0.1 0.46 0.1 Complementary to 2SC2884 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -35 V Collector-Emitter Voltage VCEO -30 V

DIP Type Transistors PNP Transistors 2SA1244 TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SC3074 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50

SMD Type Transistors PNP Transistors 2SA1213 1.70 0.1 Features Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -1A) High Speed Switching Time tstg = 1.0us (typ.) Small Flat Package 0.42 0.1 0.46 0.1 PC = 1 to 2W (mounted on ceramic substrate) Complementary to 2SC2873 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - B

SMD Type Transistors PNP Transistors 2SA1226 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-30mA 1 2 Collector Emitter Voltage VCEO=-40V +0.1 +0.05 0.95 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40 Col

CHENMKO ENTERPRISE CO.,LTD 2SA1213GP SMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 2 Ampere APPLICATION * Power amplifier . FEATURE SC-62/SOT-89 * Small flat package. (SC-62/SOT-89) * Low saturation voltage VCE(sat) =-0.5V(max.)(IC=-1A) * High speed switching time tstg= 1.0uSec (typ.) * PC= 1.0 to 2.0W (mounted on ceramic substrate). 4.6MAX. 1.6MAX. 1.7MAX. 0.4

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other

General Purpose Transistor 2SA1213-G Series (PNP) RoHS Device Features 1 Base -Small flat package. 2 Collector SOT-89-3L 3 Emitter -Power amplifier and switching -applications. 0.181(4.60) 0.173(4.40) -Low saturation voltage. 0.061(1.55) REF. -High speed switching time. 0.102(2.60) 0.167(4.25) 0.091(2.30) 0.155(3.94) 1 2 3 Maximum Ratings (at TA=25 C unless other

2SA1213SQ PNP Transistor Features SOT-89 Low Saturation Voltage High Speed Switching Time As Complementary Type of the NPN Transistor 2SC2873SQ is Recommended. Equivalent Circuit 1.Base 2.Collector 3. Emitter 2.Collector Marking Code 2SA1213SQ-O NX 2SA1213SQ-Y NY 1.Base 3. Emitter . Absolute Maximum Ratings Ratings at 25 ambient temperature unless oth

2SA1244 PNP Transistors TO-251 Features Low collector saturation voltage 1 2 3 High speed switching time tstg = 1.0 s (typ.) Complementary to 2SC3074 1 3 2 1 Base 2 Collector 3 Emitter Unit mm Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -50 V Emitter - Base Voltag

2SA1213 SOT-89 Ty p PNP Transistors 3 Features Low Saturation Voltage VCE(sat) = -0.5V (max) (IC = -1A) 2 High Speed Switching Time tstg = 1.0us (typ.) 1 1.Base Small Flat Package 2.Collector 3.Emitter PC = 1 to 2W (mounted on ceramic substrate) Simplified outline(SOT-89) Complementary to 2SC2873 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector -

2SA1213 BIPOLAR TRANSISTOR (PNP) FEATURES Complementary to 2SC2873 Power Amplifier and Switching Application Low Saturation Voltage High Speed Switching Time Surface Mount device SOT-89 MECHANICAL DATA Case SOT-89 Case Material Molded Plastic. UL flammability Classification Rating 94V-0 Weight 0.055 grams (approximate) MAXIMUM RATINGS (T = 2

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switching reg- lators, DC/DC converters, and high frequency p

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -130 V CBO V Collector-

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1290 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescent lamp lighting circuits). Power amplifier (high p

isc Silicon PNP Power Transistor 2SA1291 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3255 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescent

isc Silicon PNP Power Transistor 2SA1250 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Low Collector Saturatioin Voltage- V = -1.0V(Max.)@ I = -5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general-purpose power switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SA1261 DESCRIPTION Low Collector Saturation Voltage- V = -0.6V(Max.)@I = -5A CE(sat) C Fast Switching Speed Complement to Type 2SC3157 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Developed for high-voltage high-speed switching, and is ideal for use as a driver in devices such as switchin

isc Silicon PNP Power Transistor 2SA1215 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO High Power Dissipation Complement to Type 2SC2921 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon PNP Power Transistor 2SA1290 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3254 APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescent lamp lighting circuits). Power amplifier (high power car stereo, motor controller

isc Silicon PNP Power Transistor 2SA1262 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min.) (BR)CEO Low Collector Saturation Voltage V = -0.6V(Max.)@I = -2A CE(sat) C Complement to Type 2SC3179 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIM

isc Silicon PNP Power Transistor 2SA1261-Z DESCRIPTION High switching speed Low Collector-Emitter Saturation Voltage- VCE(sat)= -0.6V(Max)@ IC= -5A 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC3157 APPLICATIONS High speed high voltage switching industrial use DC/DC converters ABSOLUTE MAX

isc Silicon PNP Power Transistor 2SA1217 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -40V (Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2877 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency power amplifier and low speed switching applications. Suitable for output stage of 5

isc Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1263 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage app

isc Silicon PNP Power Transistor 2SA1249 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -160V (Min) (BR)CEO Large Current Capacity Complement to Type 2SC3117 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Color TV sound output, converters, inverters. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1205 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V(Min) (BR)CEO Low Collector Saturation Voltage- V = -0.5V(Max.)@ I = -5A CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMET

isc Silicon PNP Power Transistor 2SA1294 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3263 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1263N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -5A CE(sat) C Good Linearity of h FE Complement to Type 2SC3180N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 40W high fidelity audio frequency amplifier output stage a

isc Silicon PNP Power Transistor 2SA1242 DESCRIPTION h =100-320(I = -0.5A; V = -2V) FE C CE h =70(Min)(I = -4A; V = -2V) FE C CE Low Collector-Emitter Saturation Voltage- V )= -1.0V(Max)( I = -4A; I = -0.1A) CE(sat C B Power Dissipation- High P = 10W@T =25 ,P = 10W@Ta=25 C C C Minimum Lot-to-Lot variations for robust device performance and reliable operation

isc Silicon PNP Power Transistor 2SA1209 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE High Switching Speed Complement to Type 2SC2911 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-voltage switching and AF 100W predriver applications. ABSOLUTE MAXIMUM

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1227 2SA1227A DESCRIPTION With TO-3PFa package Complement to type 2SC2987/2987A High power dissipation APPLICATIONS For use in audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDI

isc Silicon PNP Transistor 2SA1283 DESCRIPTION High Voltage and High Current Vceo=-60V(Min. Excellent hFE Linearity Low Noise Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Audio frequency general purpose amplifier Applications Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER V

isc Silicon PNP Power Transistor 2SA1280 DESCRIPTION Collector-Emitter Breakdown Voltage V = -150V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -15

isc Silicon PNP Power Transistor 2SA1214 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -50V (Min) (BR)CEO Good Linearity of h FE Wide Area of Safe Operation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Desinged for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE

isc Silicon PNP Power Transistor 2SA1265 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage app

isc Silicon PNP Power Transistor 2SA1264 DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage app

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of hFE High Collector-Emitter Breakdown Voltage- V(BR)CEO= -120V(Min)-2SA1220 = -160V(Min)-2SA1220A Complement to Type 2SC2690/A APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLUTE MAXIMUM RATINGS(Ta=25 )

isc Silicon PNP Power Transistor 2SA1293 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -3A CE(sat) C Fast Switching Speed Complement to Type 2SC3258 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VAL

isc Silicon PNP Power Transistor 2SA1265N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -7A CE(sat) C Good Linearity of h FE Complement to Type 2SC3182N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 70W high fidelity audio frequency amplifier output stage a

isc Silicon PNP Power Transistor 2SA1292 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -7.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3256 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters,converters(strobo,flash,fluorescent l

isc Silicon PNP Power Transistor 2SA1227 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2987 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UN

isc Silicon PNP Power Transistor 2SA1295 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -230V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3264 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VA

isc Silicon PNP Power Transistor 2SA1225 DESCRIPTION High transition frequency 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation Complementary to 2SC2983 APPLICATIONS Power amplifier applications Driver stage amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

isc Silicon PNP Power Transistor 2SA1279 DESCRIPTION Collector-Emitter Breakdown Voltage V = -60V(Min) (BR)CEO Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -60

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1216 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2922 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 )

isc Silicon PNP Power Transistor 2SA1227A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -160V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC2987A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1244 DESCRIPTION With TO-251(IPAK) packaging High speed switching time Low collector saturation voltage Complement to type 2SC3074 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Medium power dissipation ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U

isc Silicon PNP Power Transistors 2SA1220/A DESCRIPTION Good Linearity of h FE High Collector-Emitter Breakdown Voltage- V = -120V(Min)-2SA1220 (BR)CEO = -160V(Min)-2SA1220A Complement to Type 2SC2690/A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Adudio frequency power amplifier High frequency power amplifier ABSOLU

isc Silicon PNP Darlington Power Transistor 2SA1259 DESCRIPTION High DC Current Gain- h = 2000(Min)@ I = -2.5A FE C Low Collector-Emitter Saturation Voltage V = -1.5V(Max)@ I = -2.5A CE(sat) C Complement to Type 2SC3145 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose amplifier high f and high

isc Silicon PNP Power Transistor 2SA1289 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max.)@I = -2.5A CE(sat) C Fast Switching Speed Complement to Type 2SC3253 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for electrical equipment. Inverters, converters(strobo, flash, fluorescen

isc Silicon PNP Power Transistor 2SA1276 DESCRIPTION Collector-Emitter Breakdown Voltage V = -30V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3230 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

isc Silicon PNP Power Transistor 2SA1288 DESCRIPTION Low Collector Saturation Voltage Large Current Capability Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifiers Switching regulator ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -80 V CBO V Collector-Emitter Voltage -

isc Silicon PNP Power Transistor 2SA1264N DESCRIPTION Low Collector Saturation Voltage- V = -2.0V(Min) @I = -6A CE(sat) C Good Linearity of h FE Complement to Type 2SC3181N Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power amplifier applications Recommend for 55W high fidelity audio frequency amplifier output stage a