Аналоги (замена) для 2SA1302

 

 

2SA1302 Datasheet (PDF)

..1. 2sa1302.pdf Size:114K _mospec

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..2. 2sa1302.pdf Size:219K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1302 DESCRIPTION With TO-3PL package Complement to type 2SC3281 APPLICATIONS Power amplifier applications Recommended for 100W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

..3. 2sa1302.pdf Size:128K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1302 DESCRIPTION High Current Capability High Power Dissipation High Collector-Emitter Breakdown Voltage- : V(BR)CEO= -200V(Min) Complement to Type 2SC3281 APPLICATIONS Power amplifier applications Recommend for 100W high fidelity audio frequency amplifier output stage applica

8.1. 2sa1306b 2sc3298b.pdf Size:397K _motorola

8.2. 2sa1300.pdf Size:206K _toshiba

2SA1300 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1300 Strobe Flash Applications Unit: mm Medium Power Amplifier Applications High DC current gain and excellent hFE linearity : h = 140~600 (V = -1 V, I = -0.5 A) FE (1) CE C: h = 60 (min), 120 (typ.) (V = -1 V, I = -4 A) FE (2) CE C Low saturation voltage: V = -0.5 V (max) CE (sat)(I = -2 A,

 8.3. 2sa1304.pdf Size:154K _toshiba

8.4. 2sa1309a.pdf Size:35K _panasonic

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V1.27 1.

 8.5. 2sa1309a e.pdf Size:39K _panasonic

Transistor2SA1309ASilicon PNP epitaxial planer typeFor low-frequency amplificationUnit: mmComplementary to 2SC3311A4.0 0.2FeaturesHigh foward current transfer ratio hFE.Allowing supply with the radial taping.Optimum for high-density mounting.markingAbsolute Maximum Ratings (Ta=25C)1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 60 V1.27 1.

8.6. 2sa1300.pdf Size:91K _utc

UNISONIC TECHNOLOGIES CO., LTD 2SA1300 PNP EPITAXIAL SILICON TRANSISTOR SILICON PNP EPITAXAL TYPE DESCRIPTION * Strobo Flash Applications. * Medium Power Amplifier Applications. FEATURES * High DC Current Gain and Excellent h Linearity. FE* h =140-600, (V = -1V,I = -0.5A) FE(1) CE C* h =60(Min.),120(Typ.),(V = -1V,I = -4A) FE(2) CE C* Low Saturation Voltage * V =

8.7. 2sa1300.pdf Size:395K _secos

2SA1300 -2 A, -20 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92 FEATURES High DC Current gain and excellent hFE linearity Low Saturation Voltage G HEmitter Collector Base JCLASSIFICATION OF hFE(1) A DProduct-Rank 2SA1300-Y 2SA1300-GR 2SA1300-BL Mil

8.8. 2sa1301.pdf Size:25K _wingshing

2SA1301 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER 2-21F1A High Current Capability High Power Dissipation Complementary to 2SC3280ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -160 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -12 A Co

8.9. 2sa1307.pdf Size:69K _wingshing

2SA1307 PNP EPITAXIAL SILICON TRANSISTOR POWER AMPLIFIER VERTICAL DEFLECTION OUTPUT SC-67 Complement to 2SC3299ABSOLUTE MAXIMUM RATINGS (T =25)ACharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltage VCEO -50 V Emitter-Base voltage VEBO -5 V Collector Current (DC) IC -5 A Collector Dissipation (Tc=25 PC 20 W

8.10. 2sa1300.pdf Size:405K _jiangsu

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors2SA1300 TRANSISTOR (PNP) TO-92FEATURES High DC Current Gain and Exceiient hFE inearity 1. EMITTER Low Saturation Voitage 2. COLLECTOR 3. BASE Equivalent Circuit 2SA1300=Device code Solid dot=Green molding compound device, if none,the normal

8.11. 2sa1308.pdf Size:145K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1308 DESCRIPTION With TO-220F package Low collector saturation voltage APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collec

8.12. 2sa1301.pdf Size:198K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1301 DESCRIPTION With TO-3PL package Complement to type 2SC3280 APPLICATIONS Power amplifier applications Recommended for 80W high fidelity audio frequency amplifier output stage PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PL) and symbol

8.13. 2sa1307.pdf Size:211K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1307 DESCRIPTION With TO-220Fa package Complement to type 2SC3299 Low saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO

8.14. 2sa1303.pdf Size:193K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1303 DESCRIPTION With TO-3PN package Complement to type 2SC3284 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

8.15. 2sa1305.pdf Size:151K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1305 DESCRIPTION With TO-220Fa package Low collector saturation voltage High transition frequency APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base volta

8.16. 2sa1306 2sa1306a 2sa1306b.pdf Size:159K _jmnic

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1306 2SA1306A 2SA1306B DESCRIPTION With TO-220Fa package Complement to type 2SC3298,2SC3298A,2SC3298B APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDIT

8.17. 2sa1304.pdf Size:196K _jmnic

JMnic Product Specification Silicon PNP Power Transistors 2SA1304 DESCRIPTION With TO-220Fa package Complement to type 2SC3296 High breakdown voltage APPLICATIONS Power amplifier applications Vertical output applicatios PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Tc=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Colle

8.18. 2sa1303.pdf Size:28K _sanken-ele

LAPT 2SA1303Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3284)Application : Audio and General Purpose(Ta=25C) External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical CharacteristicsSymbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 150 V ICBO VCB=150V 100max AVCEO 150 V IEBO VEB

8.19. 2sa1300.pdf Size:176K _lge

2SA1300(PNP)TO-92 Bipolar TransistorsTO-92 1. EMITTER 2. COLLECTOR 3. BASE Features High DC Current gain and excellent hFE linearity Low saturation voltage MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Collector-Base Voltage -20 V VCEO Collector-Emitter Voltage -10 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Co

8.20. 2sa1300.pdf Size:585K _can-sheng

TO-92 Plastic-Encapsulate Transistors2SA13002SA13002SA1300 TRANSISTOR (PNP)2SA1300FEATURESFEATURESFEATURESFEATURESTO-92TO-92TO-92TO-92 High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearity High DC Current gain and excellent hFE linearityLow saturation voltag

8.21. 2sa1308.pdf Size:198K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1308DESCRIPTIONLow Collector Saturation VoltageFast Switching SpeedComplement to Type 2SC3308Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -100 VCBOV Coll

8.22. 2sa1301.pdf Size:221K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1301DESCRIPTIONHigh Power DissipationCollector-Emitter Breakdown Voltage-: V = -160V(Min)(BR)CEOComplement to Type 2SC3280Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applicationsRecommend for 80W high fidelity audio frequency amplifieroutput stage applications

8.23. 2sa1307.pdf Size:216K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1307DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max.)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC3299Minimum Lot-to-Lot variations for robust deviceperformance and reliable operation.APPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

8.24. 2sa1306.pdf Size:192K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306DESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)(BR)CEOComplement to Type 2SC3298Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM

8.25. 2sa1306 a b.pdf Size:140K _inchange_semiconductor

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistors 2SA1306/A/B DESCRIPTION Good Linearity of hFEHigh Collector-Emitter Breakdown Voltage- V(BR)CEO= -160V(Min)-2SA1306 = -180V(Min)-2SA1306A = -200V(Min)-2SA1306B Complement to Type 2SC3298/A/B APPLICATIONS Power amplifier applications. Driver stage amplifier applications. ABSOLUTE

8.26. 2sa1303.pdf Size:220K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1303DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3284Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VAL

8.27. 2sa1306 2sa1306a.pdf Size:188K _inchange_semiconductor

INCHANGE Semiconductorisc Silicon PNP Power Transistors 2SA1306/ADESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306AComplement to Type 2SC3298/AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amplif

8.28. 2sa1305.pdf Size:217K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1305DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -30V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3297Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Car radio and car stereo output stage applications.ABSOLUTE MAXIMUM RATINGS(T =25

8.29. 2sa1306 2sa1306a 2sa1306b.pdf Size:218K _inchange_semiconductor

isc Silicon PNP Power Transistors 2SA1306/A/BDESCRIPTIONGood Linearity of hFEHigh Collector-Emitter Breakdown Voltage-V = -160V(Min)-2SA1306(BR)CEO= -180V(Min)-2SA1306A= -200V(Min)-2SA1306BComplement to Type 2SC3298/A/BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Driver stage amp

8.30. 2sa1304.pdf Size:214K _inchange_semiconductor

isc Silicon PNP Power Transistor 2SA1304DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -150V(Min)(BR)CEOComplement to Type 2SC3296Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower amplifier applications.Vertical output applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collecto

     

 

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