This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SA1320 TOSHIBA Transistor Silicon PNP Triple Diffused Type (PCT process) 2SA1320 High Voltage Switching Applications Unit: mm Color TV Chroma Output Applications High voltage: VCEO = -250 V Low C : 1.8 pF (max) re Complementary to 2SC3333 Maximum Ratings (Ta == 25C) ==Characteristics Symbol Rating UnitCollector-base voltage VCBO -250 VCollector-emi

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

Transistor2SA1323Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC33144.0 0.2FeaturesAllowing supply with the radial taping.High transition frequency fT.Optimum for high-density mounting.Absolute Maximum Ratings (Ta=25C) marking1 2 3Parameter Symbol Ratings UnitCollector to base voltage VCBO 30 VCollector to emitte

JMnic Product Specification Silicon PNP Power Transistors 2SA1329 DESCRIPTION With TO-220 package Complement to type 2SC3346 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

JMnic Product Specification Silicon PNP Power Transistors 2SA1327 DESCRIPTION With TO-220Fa package Low collector saturation voltage High current capacity APPLICATIONS Strobe flash applications Audio power amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1328 DESCRIPTION With TO-220 package Complement to type 2SC3345 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base Fig.1 simplified outline (TO-220) and symbol 3 Bas

isc Silicon PNP Power Transistor 2SA1329DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3346Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU

isc Silicon PNP Power Transistor 2SA1327DESCRIPTIONLow Collector Saturation Voltage-: V = -0.5V(Max.)@I = -8ACE(sat) CHigh DC Current Gain-: hFE= 70(Min.)@ I = -8ACMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSStrobe flash applications.Audio power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SA1328DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -6ACE(sat) CHigh Switching SpeedComplement to Type 2SC3345Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALU