Ordering number:EN3217PNP/NPN Epitaxial Planar Silicon Transistors2SA1331/2SC3361High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2018A Small-sized package permitting the 2SA1331/[2SA1331/2SC3361]2SC3361-applied sets to be made small and slim.Switching Time Test CircuitC : CollectorB : Base(Fo

Ordering number:EN1392APNP/NPN Epitaxial Planar Silicon Transistors2SA1339/2SC3393High-Speed Switching ApplicationsFeatures Package Dimensions Very small-sized package permitting sets to be small-unit:mmsized, slim.2033 High breakdown voltage : VCEO=()50V.[2SA1339/2SC3393] Complementary pair transistor having large currentcapacity and high fT. Adoption o

Ordering number:EN1421APNP/NPN Epitaxial Planar Silicon Transistors2SA1338/2SC3392High-Speed Switching ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage : VCEO=()50V.2018A Large current capacitiy and high fT.[2SA1338/2SC3392] Very small-sized package permitting sets to be small-sized, slim.Switching Time Test

2SA1337Silicon PNP EpitaxialApplication Low frequency low noise amplifier HF amplefierOutlineSPAK1. Emitter122. Collector33. Base2SA1337Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 55 VCollector to emitter voltage VCEO 50 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector

JMnic Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 EmitterAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER

JMnic Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION With TO-220Fa package High VCEO APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVCBO Collector-base voltage Open emitter -160

SMD Type orSMD Type TransistICsPNP Transistors 2SA1338SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High breakdown voltage : VCEO=-50V.1 2Large current capacitiy and high fT.+0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1Ultrasmall-sized package permitting setsto be smallsized, slim.1.Base Complementary to 2SC33922.Emitter3

SMD Type TransistorsPNP Transistors 2SA1330SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesHigh DC current gain.High voltage.1 2+0.05 Complementary to 2SC3360 0.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -200 VCollector-emitter voltage VCEO -2

SMD Type orSMD Type TransistICsPNP Transistors 2SA1331SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesFast switching speed.High breakdown voltage.1 2 Small-sized package permitting the 2SA1331/+0.050.95+0.1-0.1 0.1 -0.012SC3361-applied sets to be made small and slim. 1.9+0.1-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Sy

isc Silicon PNP Power Transistor 2SA1333DESCRIPTIONHigh Collector-Emitter Breakdown VoltageGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -200 VCBOV Collec

isc Silicon PNP Power Transistor 2SA1332DESCRIPTIONLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower power amplifier applications.Driver stage amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -160 VCBOV Collector-Emitter