2SA1332 - описание и поиск аналогов

JMnic Product Specification Silicon PNP Power Transistors 2SA1332 DESCRIPTION With TO-220Fa package High VCEO APPLICATIONS Power amplifier applications Driver stage amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -160

isc Silicon PNP Power Transistor 2SA1332 DESCRIPTION Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power power amplifier applications. Driver stage amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -160 V CBO V Collector-Emitter

Ordering number EN3217 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1331/2SC3361 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2018A Small-sized package permitting the 2SA1331/ [2SA1331/2SC3361] 2SC3361-applied sets to be made small and slim. Switching Time Test Circuit C Collector B Base (Fo

Ordering number EN1392A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1339/2SC3393 High-Speed Switching Applications Features Package Dimensions Very small-sized package permitting sets to be small- unit mm sized, slim. 2033 High breakdown voltage VCEO=( )50V. [2SA1339/2SC3393] Complementary pair transistor having large current capacity and high fT. Adoption o

Ordering number EN1421A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1338/2SC3392 High-Speed Switching Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage VCEO=( )50V. 2018A Large current capacitiy and high fT. [2SA1338/2SC3392] Very small-sized package permitting sets to be small- sized, slim. Switching Time Test

2SA1337 Silicon PNP Epitaxial Application Low frequency low noise amplifier HF amplefier Outline SPAK 1. Emitter 1 2 2. Collector 3 3. Base 2SA1337 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 55 V Collector to emitter voltage VCEO 50 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector

JMnic Product Specification Silicon PNP Power Transistors 2SA1333 DESCRIPTION With MT-200 package High power dissipation APPLICATIONS Audio and general purpose applications PINNING (see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER

SMD Type or SMD Type TransistICs PNP Transistors 2SA1338 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High breakdown voltage VCEO=-50V. 1 2 Large current capacitiy and high fT. +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 Ultrasmall-sized package permitting sets to be smallsized, slim. 1.Base Complementary to 2SC3392 2.Emitter 3

SMD Type Transistors PNP Transistors 2SA1330 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High DC current gain. High voltage. 1 2 +0.05 Complementary to 2SC3360 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -200 V Collector-emitter voltage VCEO -2

SMD Type or SMD Type TransistICs PNP Transistors 2SA1331 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Fast switching speed. High breakdown voltage. 1 2 Small-sized package permitting the 2SA1331/ +0.05 0.95+0.1 -0.1 0.1 -0.01 2SC3361-applied sets to be made small and slim. 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Sy

isc Silicon PNP Power Transistor 2SA1333 DESCRIPTION High Collector-Emitter Breakdown Voltage Good Linearity of h FE Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -200 V CBO V Collec