2SA1361 - описание и поиск аналогов

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 25

2SA1360 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1360 Audio Frequency Amplifier Applications Unit mm Complementary to 2SC3423 Small collector output capacitance Cob = 2.5 pF (typ.) High transition frequency fT = 200 MHz (typ.) Absolute Maximum Ratings (Ta = 25 C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -150 V Colle

2SA1362 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1362 Low Frequency Power Amplifier Applications Unit mm Power Switching Applications High DC current gain hFE = 120 to 400 Low saturation voltage VCE (sat) = -0.2 V (max) (IC = -400 mA, IB = -8 mA) Suitable for driver stage of small motor Small package Absolute Maximum Ratings (Ta = 2

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with

ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION ISAHAYA ELECTRONICS CORPORATION http //www.idc-com.co.jp 6-41, TSUKUBA, ISAHAYA, NAGASAKI, 854-0065, JAPAN Keep safety in your circuit designs ! Isahaya Electronics Corporation puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble

Product Specification www.jmnic.com Silicon PNP Power Transistors 2SA1360 DESCRIPTION With TO-126 package Complement to type 2SC3423 High transition frequency APPLICATIONS Audio frequency amplifier applications PINNING PIN DESCRIPTION 1 Emitter Collector;connected to 2 mounting base 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VAL

LESHAN RADIO COMPANY, LTD. General Purpose Transistor DESCRIPTION L2SA1365*LT1G is a mini package silicon PNP epitaxial transistor, L2SA1365*LT1G designed with high collector current and small VCE(sat). . S-L2SA1365*LT1G FEATURE Small collector to emitter saturation voltage. VCE(sat)=-0.2V typ 3 Excellent linearity of DC forward current gain. Super mini package

SMD Type Transistors PNP Transistors 2SA1366 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-400mA Collector Emitter Voltage VCEO=-50V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 Complementary to 2SC3441 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type or SMD Type TransistICs PNP Transistors 2SA1362 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Suitable for driver stage of small motor. Small package. 1 2 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -15 V Collector-emitter voltage VCEO

SMD Type Transistors PNP Transistors 2SA1364 1.70 0.1 Features High Voltage VCEO = -60V High Collector Current (IC = -1A) High Collector Dissipation PC = 500mW 0.42 0.1 Small Package For Mounting 0.46 0.1 Complementary to 2SC3444 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -60 V Collector-Emitter Voltag

SMD Type Transistors PNP Transistors 2SA1363 Features 1.70 0.1 High hFE hFE = 150 to 800 High Collector Current (IC = -2A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3443 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -20 V Collector-Emitter Vo

SMD Type Transistors PNP Transistors 2SA1368 Features 1.70 0.1 High Voltage VCEO = -100V High Collector Current (ICM = -800mA) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3438 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -100 V Collector-Emitter

SMD Type or SMD Type TransistICs PNP Transistors 2SA1365 SOT-23 Unit mm +0.1 2.9 -0.1 0.4+0.1 -0.1 3 Features Low collector to emitter saturation voltage. Excellent linearity nof DC forward current gain. 1 2 +0.1 +0.05 0.95 -0.1 Super mini package for easy mounting. 0.1-0.01 +0.1 1.9 -0.1 High collector current. High gain band width product. 1.Base Complementary t

SMD Type Transistors PNP Transistors 2SA1369 1.70 0.1 Features High Collector Current (ICM = -3A, IC = -1.5A) High Collector Dissipation PC = 500mW Small Package For Mounting 0.42 0.1 0.46 0.1 Complementary to 2SC3439 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -30 V Collector-Emitter Voltage VCEO -20 V

isc Silicon PNP Power Transistor 2SA1360 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -150V (Min) (BR)CEO Complement to Type 2SC3423 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio frequency amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT V Collector-Base Volta