Биполярный транзистор 2SA1390 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1390
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.3 W
Макcимально допустимое напряжение коллектор-база (Ucb): 35 V
Макcимально допустимое напряжение коллектор-эмиттер (Uce): 35 V
Макcимально допустимое напряжение эмиттер-база (Ueb): 4 V
Макcимальный постоянный ток коллектора (Ic): 0.5 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 120 MHz
Статический коэффициент передачи тока (hfe): 60
Корпус транзистора: SPAK
2SA1390 Datasheet (PDF)
2sa1390.pdf
2SA1390Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineSPAK1. Emitter122. Collector33. Base2SA1390Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 35 VCollector to emitter voltage VCEO 35 VEmitter to base voltage VEBO 4 VCollector current IC 500 mACollector power dissipation PC 300 mWJu
2sa1391 2sc3382.pdf
Ordering number:EN1942APNP/NPN Epitaxial Planar Silicon Transistors2SA1391/2SC3382Low Noise AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A Low-noise use.[2SA1391/2SC3382]Noise Test CircuitJEDEC : TO-92 B : Base( ) : 2SA1391EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute Maximum Rating
2sa1392 2sc3383.pdf
Ordering number:EN1943APNP/NPN Epitaxial Planar Silicon Transistors2SA1392/2SC3383AF Amp ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp.2003A[2SA1392/2SC3383]JEDEC : TO-92 B : Base( ) : 2SA1392EIAJ : SC-43 C : CollectorSANYO : NF E : EmitterSpecificationsAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Ratin
2sa1395.pdf
DATA SHEETSILICON POWER TRANSISTOR2SA1395PNP SILICON EPITAXIAL TRANSISTORFOR HIGH-SPEED SWITCHINGThe 2SA1395 is a mold power transistor developed for high- PACKAGE DRAWING (UNIT: mm)speed switching, and is ideal for use as a driver in devices such asswitching regulators, DC/DC converters, and high-frequency poweramplifiers.FEATURES Mold package that does not req
2sa1396.pdf
JMnic Product Specification Silicon PNP Power Transistors 2SA1396 DESCRIPTION With TO-220Fa package Complement to type 2SC3568 Low collector saturation voltage High switching speed APPLICATIONS Switching regulator DC-DC converter High frequency power amplifier PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings (Ta=25)
2sa1395.pdf
isc Silicon PNP Power Transistor 2SA1395DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@ I = -1ACE(sat) CHigh Switching SpeedComplement to Type 2SC3567Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE
2sa1396.pdf
isc Silicon PNP Power Transistor 2SA1396DESCRIPTIONLow Collector Saturation Voltage-: V = -0.6V(Max)@ I = -5ACE(sat) CHigh Switching SpeedComplement to Type 2SC3568Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching regulator, DC-DC converter andhigh frequency power amplifier applications.ABSOLUTE
Другие транзисторы... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , MJE340 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
