2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage: VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base vo

2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1451A High-Speed, High-Current Switching Applications Unit: mm Low collector saturation voltage : VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC3709A Absolute Maximum Ratings (Tc = 25C) Characteristics Symbol Rating UnitCollector-base

2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Unit: mm Video Amplifier Applications High Speed SwitcHing Applications High transition frequency: fT = 200 MHz (typ.) Low collector output capacitance: C = 3.5 pF (typ.) ob Complementary to 2SC3803 Maximum Ratings (Ta = 25C) Characteristics Sym

Ordering number:EN2089BPNP/NPN Epitaxial Planar Silicon Transistors2SA1477/2SC3787160V/140mA Switching ApplicationsApplications Package Dimensions Predrivers for 100W power amplifiers. unit:mm2042BFeatures [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-densitymounting (TO-126M

Ordering number:EN1766CPNP/NPN Epitaxial Planar Silicon Transistors2SA1407/2SC3601Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1407/2SC3601] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

Ordering number:ENN1856APNP Epitaxial Planar Silicon Transistor2SA1435High hFE, AF Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2003B[2SA1435]Features 5.04.04.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e

Ordering number:EN1853APNP Epitaxial Planar Silicon Transistor2SA1434High hFE, Low-FrequencyGeneral-Purpose Amp ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SA1434]Features Very small-sized package permitting 2SA1434-usedsets to be made smaller, slimer. Adoption of FBET process.

Ordering number:EN1764BPNP/NPN Epitaxial Planar Silicon Transistors2SA1405/2SC3599Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1405/2SC3599] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO

Ordering number : EN2005B2SA1416 / 2SC3646SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1416 / 2SC3646High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

Ordering number:EN1972APNP/NPN Epitaxial Planar Silicon Transistors2SA1470/2SC374760V/7A High-Speed Switching ApplicationsApplications Package Dimensions Inductance, lamp drivers.unit:mm Inveters, conveters (strobes, flashes, FLT lighting2041circiuts).[2SA1470/2SC3747] Power amplifiers (high-power car stereos, motorcontrol). High-speed switching (switching

Ordering number:EN1973APNP/NPN Epitaxial Planar Silicon Transistors2SA1469/2SC374660V/5A High-Speed Switching ApplicationsApplications Package Dimensions Various inductance lamp drivers for electricalunit:mmequipment.2041 Inverters, converters (strobo, flash, fluorescent lamp[2SA1469/2SC3746]lighting circuit). Power amp (high power car stereo, motor controller).

Ordering number:EN2093PNP/NPN Epitaxial Planar Silicon Transistors2SA1479/2SC3789High-Definiton CRT DisplayVideo Output ApplicationsApplications Package Dimensions High-definition CRT display.unit:mm Color TV chroma output, high breakdown voltage2042Adrivers.[2SA1479/2SC3789]Features High breakdown voltage (VCEO 300V). Excellent high frequency characte

Ordering number:EN1761BPNP/NPN Epitaxial Planar Silicon Transistors2SA1402/2SC3596Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1402/2SC3596] Wide-band amp.Features High fT: fT typ=700MHz. Small reverse transfer capacit

Ordering number : EN2006C2SA1417 / 2SC3647SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching2SA1417 / 2SC3647ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs.Specifications ( ) : 2S

Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig

Ordering number:EN2001APNP/NPN Epitaxial Planar Silicon Transistors2SA1471/2SC374860V/10A High-Speed Switching ApplicationsApplications Package Dimensions Car-use inductance drivers, lamp drivers.unit:mm Inverters drivers, conveters (strobes, flashes, FLT2041lighting circuits).[2SA1471/2SC3748] Power amplifiers (high-power car stereos, motorcontrol). High-s

Ordering number:EN2253APNP/NPN Epitaxial Planar Silicon Transistors2SA1478/2SC3788High-Definition CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage : VCEO 200V.unit:mm Small reverse transfer capacitance and excellent high2042Afrequency cahaceteristic[2SA1478/2SC3788]: Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET proces

Ordering number:EN1763BPNP/NPN Epitaxial Planar Silicon Transistors2SA1404/2SC3598Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplictions Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1404/2SC3598] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO

Ordering number:EN2217APNP/NPN Epitaxial Planar Silicon Transistor2SA1450/2SC3708Low-Frequency Driver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm AF amp, AF power amp.2003A High breakdown voltage : VCEO>80V[2SA1450/2SC3708]JEDEC : TO-92 B : Base( ) : 2SA1450 EIAJ : SC-43 C : CollectorSANYO : NP E : EmitterSpecificationsAbsolute

Ordering number:EN3471PNP Epitaxial Planar Silicon Transistor2SA1433High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT (Gain-Bandwidth Product).unit:mm Small reverse transfer capacitance (Cre=1.3pF).2006A Adoption of FBET process.[2SA1433]EIAJ : SC-51 B : BaseSANYO : MP C :CollectorE : EmitterSpecificationsAbsolute Maximum Ratings

Ordering number : EN1788B2SA1418 / 2SC3648SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon TransistorsHigh-Voltage Switching,2SA1418 / 2SC3648Preriver ApplicationsApplications Color TV audio output, inverter.Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

Ordering number:EN1765APNP/NPN Epitaxial Planar Silicon Transistors2SA1406/2SC3600Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009A Color TV chroma output.[2SA1406/2SC3600] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

Ordering number:EN2254PNP/NPN Epitaxial Planar Silicon Transistors2SA1480/2SC3790High-Definiton CRT DisplayVideo Output ApplicationsFeatures Package Dimensions High breakdown voltage (VCEO 300V).unit:mm Small reverse transfer capacitance and excellent high2042Afrequency characteristic[2SA1480/2SC3790]: Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

Ordering number:EN1720APNP/NPN Epitaxial Planar Silicon Transistors2SA1415/2SC3645High-Voltage Switching,Predriver ApplicationsFeatures Package Dimensions Adoption of FBET process.unit:mm High breakdown voltage (VCEO=160V).2038 Excellent linearity of hFE and small Cob.[2SA1415/2SC3645] Fast switching speed. Very small size marking it easy to provide high

Ordering number:EN1762BPNP/NPN Epitaxial Planar Silicon Transistors2SA1403/2SC3597Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahig-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1403/2SC3597] Wide-band amp.Features High fT : fT typ=800MHz. Small reverse transfer capacit

Ordering number:ENN2456PNP Epitaxial Planar Silicon Transistor2SA1436High hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003BFeatures[2SA1436] Adoption of MBIT process.5.04.04.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol

Ordering number : EN2007B2SA1419 / 2SC3649SANYO SemiconductorsDATA SHEETPNP / NPN Epitaxial Planar Silicon Transistors2SA1419 / 2SC3649High-Voltage Switching ApplicationsFeatures Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs.Specifications ( ) :

Ordering number:EN829HPNP/NPN Epitaxial Planar Silicon Transistors2SA1481/2SC2960High-Speed Switching ApplicationsFeatures Package Dimensions Fast switching speed.unit:mm High breakdown voltage.2033[2SA1481/2SC2960]B : BaseC : Collector( ) : 2SA1481E : EmitterSpecificationsSANYO : SPAAbsolute Maximum Ratings at Ta = 25CParameter Symbol Conditions Rating

MCC2SA1464-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1464-QCA 91311Phone: (818) 701-49332SA1464-RFax: (818) 701-4939FeaturesPNP Silicon High fT: fT=400MHZ Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistors Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates

MCC2SA1464-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1464-QCA 91311Phone: (818) 701-49332SA1464-RFax: (818) 701-4939FeaturesPNP Silicon High fT: fT=400MHZ Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistors Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates

MCC2SA1464-PMicro Commercial ComponentsTM20736 Marilla Street ChatsworthMicro Commercial Components 2SA1464-QCA 91311Phone: (818) 701-49332SA1464-RFax: (818) 701-4939FeaturesPNP Silicon High fT: fT=400MHZ Epoxy meets UL 94 V-0 flammability ratingEpitaxial Transistors Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates

DATA SHEETwww.onsemi.comBipolar TransistorELECTRICAL CONNECTION22()100 V, ()1 A, Low VCE(sat), (PNP)NPN Single PCP1: Base1 12: Collector3: Emitter2SA1416, 2SC36463 32SA1416 2SC3646Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed12 Ultrasmall Size Making it Easy to Provi

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2005C2SA1416/2SC3646Bipolar Transistorhttp://onsemi.com() ) ( ), (100V, ( 1A, Low VCE sat PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1416Absol

DATA SHEETwww.onsemi.comBipolar Transistor12(-)100 V, (-)2 A, Low VCE(sat),3SOT-89-3(PNP) NPN Single PCPCASE 419AU2SA1417, 2SC3647ELECTRICAL CONNECTIONFeatures2 2 Adoption of FBET, MBIT Processes1 : Base High Breakdown Voltage and Large Current Capacity1 1 2 : Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized3 : Emitter

Ordering number : EN2006D2SA1417/2SC3647Bipolar Transistorhttp://onsemi.com(-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICsSpecifications ( ) : 2SA1417Absolute Maximum Rati

Ordering number : EN1788C2SA1418/2SC3648Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 0.7A, Low VCE sat , PNP NPN Single PCPApplicaitons Color TV audio output, inverterFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Ordering number : EN2007C2SA1419/2SC3649Bipolar Transistorhttp://onsemi.com() () ( ) ( )160V, 1.5A, Low VCE sat , PNP NPN Single PCPFeatures Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid ICsSpecifications ( ) : 2SA1419Absolute Maximum Ratings at

Transistor2SA1487Silicon PNP epitaxial planer typeFor video amplifierUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 85 V+0.2 +0.2Collector to emitter voltage VCEO 85 V0.450.1 0.450.1

Power Transistors2SA1499Silicon PNP epitaxial planar typeFor high-speed switchingUnit: mm10.0 0.2 4.2 0.2Features5.5 0.2 2.7 0.2High foward current transfer ratio hFEHigh-speed switching 3.1 0.1High collector to base voltage VCBOFull-pack package which can be installed to the heat sink withone screw.1.3 0.21.4 0.1Absolute Maximum Ratings (TC=25C

Transistor2SA1487Silicon PNP epitaxial planer typeFor video amplifierUnit: mm5.9 0.2 4.9 0.2FeaturesHigh transition frequency fT.Small collector output capacitance Cob.0.7 0.12.54 0.15Absolute Maximum Ratings (Ta=25C)Parameter Symbol Ratings UnitCollector to base voltage VCBO 85 V+0.2 +0.2Collector to emitter voltage VCEO 85 V0.450.1 0.450.1

2SA1485Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1485Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 200 VCollector to emitter voltage VCEO 200 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 200

2SA1468Silicon PNP EpitaxialApplicationHigh voltage amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1468Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 180 VCollector to emitter voltage VCEO 180 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJ

2SA1484Silicon PNP EpitaxialApplicationLow frequency amplifierOutlineMPAK311. Emitter2. Base23. Collector2SA1484Absolute Maximum Ratings (Ta = 25C)Item Symbol Ratings UnitCollector to base voltage VCBO 90 VCollector to emitter voltage VCEO 90 VEmitter to base voltage VEBO 5 VCollector current IC 100 mACollector power dissipation PC 150 mWJu

2SA1491 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3855ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll

2SA1490 PNP PLANAR SILICON TRANSISTORAUDIO POWER AMPLIFIERDC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3854ABSOLUTE MAXIMUM RATING (Ta=25CC)CCCharacteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNIT2SA1488 -60

JMnic Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION With TO-3PN package Complement to type 2SC3855 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION With TO-3PN package Complement to type 2SC3854 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1469 DESCRIPTION With TO-220F package Complement to type 2SC3746 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electrical equipment Inverters ,converters Power amplification Switching regulator ,driver PIN

JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon PNP Power Transistors 2SA1489 DESCRIPTION With TO-3PN package Complement to type 2SC3853 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 EmitterAbsolute maximum ratings(Ta=) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE UNITVC

JMnic Product Specification Silicon PNP Power Transistors 2SA1471 DESCRIPTION With TO-220Fpackage Low saturation voltage. Complement to type 2SC3748 Fast switching speed. APPLICATIONS Car-use inductance drivers, lamp drivers. Inverters drivers, converters Power amplifications Switching regulators,drivers PINNING PIN DESCRIPTION1 Base Collector;con

JMnic Product SpecificationSilicon PNP Power Transistors 2SA1470 DESCRIPTION With TO-220F package Complement to type 2SC3747 Low saturation voltage Fast switching time APPLICATIONS Inductance,lamp drivers Inverters ,converters Power amplification High-speed switching PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and s

JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION With MT-200 package Complement to type 2SC3858 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITIONS VALUE U

2SA1492Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856)Application : Audio and General PurposeExternal Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.24.80.415.60.19.6 2.0VCBO 180 V ICBO VCB=180V 100max AVCEO 180 V IEBO VEB=6

2SA1493Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 V ICBO VCB=200V 100max A0.224.42.10.12-3.29VCEO 200

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SA1488/1488ASilicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A)Application : Audio and General PurposeExternal Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Ratings RatingsSymbol Unit Symbol Conditions Unit0.24.20.210.12SA1488 2SA1488A 2SA1488 2SA1488Ac0.52.8VCBO 60 80 V 100max 10

2SA1494Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858)Application : Audio and General PurposeExternal Dimensions MT-200 Absolute maximum ratings (Ta=25C) Electrical Characteristics (Ta=25C)Symbol Ratings Unit Symbol Conditions Ratings Unit0.26.00.336.4VCBO 200 VICBO VCB=200V 100max A0.224.42.1VCEO IEBO VEB=6V 100max

SMD Type TransistorsPNP Silicon Transistor2SA1412-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh Voltage: VCEO=-400VHigh speed:tr 0.7s0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -400 VCo

SMD Type TransistorsPNP Transistors2SA1413-ZTO-252Unit: mm+0.156.50-0.15+0.12.30 -0.1+0.25.30-0.2 +0.80.50 -0.7 Features High Voltage:VCEO=-600V0.127 High Speed : tf 1us+0.10.80-0.1max Complement to 2SC3632-Z+ 0.11 Base2.3 0.60- 0.1+0.154.60 -0.152 Collector3 Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol

SMD Type TransistorsPNP Transistors 2SA14181.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current CapacityFast Switching Speed0.42 0.10.46 0.1 Complementary to 2SC36481.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -16

SMD Type orSMD Type TransistICsPNP Transistors 2SA1434SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High DC current gain (hFE=500 to 1200).1 2Low collector-to-emitter saturation voltage+0.1+0.050.95-0.1 0.1 -0.01(VCE(sat) 0.5V).1.9+0.1-0.1High VEBO (VEBO 15V).1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25

SMD Type TransistorsPNP Transistors2SA1462SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features Collector Current Capability IC=-50mA1 2 Collector Emitter Voltage VCEO=-15V+0.1+0.050.95 -0.1 0.1 -0.01 Complementary to 2SC37351.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collecto

SMD Type TransistorsPNP Transistors2SA1461SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13 Features High speed switching High gain bandwidth product1 2 Complementary to 2SC3734 +0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40

SMD Type TransistorsPNP Transistors 2SA14171.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36470.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -

SMD Type TransistorsSilicon Transistor2SA1400-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh Voltage: VCEO=-400VHigh speed:tr 1.0s0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -400 VCollec

SMD Type orSMD Type TransistICsPNP Transistors 2SA1411SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13FeaturesVery high DC current gain:hFE=500 to 1600.High VEBO Voltage:VEBO=-10V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector-base voltage VCBO -25 VCollector-emitte

SMD Type TransistorsPNP Transistors2SA1463 Features1.70 0.1 High speed ,high voltage switching Low collector saturaton voltage Complementary to 2SC37360.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base

SMD Type TransistorsPNP Transistors2SA1464SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High fT : fT =400MHz Complementary to 2SC37391 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO

SMD Type TransistorsPNP Transistors 2SA14191.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity Complementary to 2SC36490.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

SMD Type TransistorsPNP Transistors2SA1468SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features High voltage amplifier1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -180 V Emitter - Base Vol

SMD Type TransistorsPNP Transistors 2SA14151.70 0.1FeaturesAdoption of FBET ProcessHigh Breakdown Voltage (VCEO = 160V)Excellent Linearlity of hFE and Small Cob0.42 0.10.46 0.1Fast Switching Speed Complementary to 2SC36451.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em

SMD Type TransistorsPNP Transistors2SA1483 Features1.70 0.1 High transition frequency Low collector output capacitance Complementary to 2SC38030.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage

SMD Type orSMD Type TransistICsPNP Transistors2SA1484SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.13 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=-90V1 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to base voltage VCBO -90

SMD Type TransistorsPNP Transistors 2SA14161.70 0.1FeaturesAdoption of FBET, MBIT ProcessesHigh Breakdown Voltage and Large Current Capacity0.42 0.10.46 0.1Fast Switching Time Complementary to 2SC36461.Base2.Collector3.EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100

2SA1478(3CA1478) PNP /SILICON PNP TRANSISTOR : CRT Purpose: High-definition CRT display video output applications. , 2SC3788(3DA3788) Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency

2SA1480(3CA1480) PNP /SILICON PNP TRANSISTOR : Purpose: High-definition CRT display video output applications. : Features: High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

2SA1492T4BLSilicon PNP Power TransistorDESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emitter Voltage -180 VCEOV Emitt

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710APPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Vol

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1232DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -130V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3012APPLICATIONSFor audio frequency power amplifier applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -130 VCBOV Collector-

SPTECH Product SpecificationSPTECH Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856APPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage -180 VCBOV Collector-Emit

isc Silicon NPN Power Transistor 2SA1412-ZDESCRIPTIONWith TO-252(DPAK) packagingExcellent linearity of hFELow collector-to-emitter saturation voltageFast switching speedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSRelay driversHigh-speed invertersConvertersHigh current switching applicationsABSOLUTE MA

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION1 Base 2 CollectorFig.1 simplified outline (TO-220F) and symbol 3 EmitterAbsolute maximum ratings (Ta=25) SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Power Transistor 2SA1413-ZDESCRIPTIONWith TO-252(DPAK) packagingLarge collector currentLow collector saturation voltageHigh power dissipationMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in DC-DC converterDriver of solenoid or motorABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PAR

isc Silicon PNP Power Transistor 2SA1486DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEOWith TO-126 packageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for low frequency power amplifiers applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltag

isc Silicon PNP Power Transistor 2SA1451ADESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3709AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE MAXIMUM RATINGS(T =25

isc Silicon PNP Power Transistor 2SA1491DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -140V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3855Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon PNP Power Transistor 2SA1488ADESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -80V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -1AFE CComplement to Type 2SC3851AMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SA1490DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -120V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3854Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

isc Silicon PNP Power Transistor 2SA1492DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -180V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3856Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1469DESCRIPTIONDC Current Gain-: h = 70(Min)@ (V = -2V, I = -1A)FE CE CLow Saturation Voltage-: V = -0.4V(Max)@ (I = -2.5A, I = -0.125A)CE(sat) C BFast Switching TimeComplement to Type 2SC3746Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for el

isc Silicon PNP Power Transistor 2SA1444DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -3A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -8A, I = -0.4A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

isc Silicon PNP Power Transistor 2SA1493DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -200V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3857Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Col

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION1 Emitter 2 Collector3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER C

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1400ZDESCRIPTIONHigh Collector-Emitter Voltage -: V = -400V(Min)CEOComplement to Type 2SC3588ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching ,especially inHybrid integrated cricuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB

isc Silicon PNP Power Transistor 2SA1489DESCRIPTIONCollector-Emitter Breakdown Voltage-V = -80V(Min)(BR)CEOGood Linearity of hFEComplement to Type 2SC3853Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSFor audio and general purpose applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll

isc Silicon PNP Power Transistor 2SA1441DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -3A, I = -0.15A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

isc Silicon PNP Power Transistor 2SA1488DESCRIPTIONCollector-Emitter Breakdown Voltage-: V = -60V(Min)(BR)CEODC Current Gain-: h = 40(Min)@ I = -1AFE CComplement to Type 2SC3851Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)a

isc Silicon PNP Power Transistor 2SA1443DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -2A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -6A, I = -0.3A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power t

isc Silicon PNP Power Transistor 2SA1442DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -1.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -4A, I = -0.2A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

isc Silicon PNP Power Transistor 2SA1471DESCRIPTIONDC Current Gain-: h = 70(Min)@ (V = -2V, I = -1A)FE CE CLow Saturation Voltage-: V = -0.4V(Max)@ (I = -5A, I = -0.25A)CE(sat) C BFast Switching TimeComplement to Type 2SC3748Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for elect

isc Silicon PNP Power Transistor 2SA1440DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = -60V(Min)CEO(SUS)High DC Current Gain-: h = 100(Min)@ (V = -2V , I = -0.5A)FE CE CLow Saturation Voltage-: V = -0.3V(Max)@ (I = -2A, I = -0.1A)CE(sat) C BMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis type of power

isc Silicon PNP Power Transistor 2SA1470DESCRIPTIONDC Current Gain-: h = 70(Min)@ (V = -2V, I = -1A)FE CE CLow Saturation Voltage-: V = -0.4V(Max)@ (I = -3.5A, I = -0.175A)CE(sat) C BFast Switching TimeComplement to Type 2SC3747Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSVarious inductance lamp drivers for el

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Voltage -200 V V

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1452DESCRIPTIONLow Collector Saturation Voltage-: V = -0.4V(Max)@I = -6ACE(sat) CGood Linearity of hFEHigh Switching SpeedComplement to Type 2SC3710Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applicationsABSOLUTE M