2SA14 - описание и поиск аналогов

2SA1452A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1452A High-Speed, High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC3710A Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base vo

2SA1451A TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1451A High-Speed, High-Current Switching Applications Unit mm Low collector saturation voltage VCE (sat) = -0.4 V (max) (IC = -6 A) High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC3709A Absolute Maximum Ratings (Tc = 25 C) Characteristics Symbol Rating Unit Collector-base

2SA1483 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA1483 High Frequency Amplifier Applications Unit mm Video Amplifier Applications High Speed SwitcHing Applications High transition frequency fT = 200 MHz (typ.) Low collector output capacitance C = 3.5 pF (typ.) ob Complementary to 2SC3803 Maximum Ratings (Ta = 25 C) Characteristics Sym

Ordering number EN2089B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1477/2SC3787 160V/140mA Switching Applications Applications Package Dimensions Predrivers for 100W power amplifiers. unit mm 2042B Features [2SA1477/2SC3787] Adoption of FBET process. Excellent linearity of hFE. Small Cob. Plastic-convered heat sink facilitating high-density mounting (TO-126M

Ordering number EN1766C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1407/2SC3601 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1407/2SC3601] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO

Ordering number ENN1856A PNP Epitaxial Planar Silicon Transistor 2SA1435 High hFE, AF Amplifier Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2003B [2SA1435] Features 5.0 4.0 4.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e

Ordering number EN1853A PNP Epitaxial Planar Silicon Transistor 2SA1434 High hFE, Low-Frequency General-Purpose Amp Applications Applications Package Dimensions Low frequency general-purpose amplifiers, drivers, unit mm muting circuits. 2018A [2SA1434] Features Very small-sized package permitting 2SA1434-used sets to be made smaller, slimer. Adoption of FBET process.

Ordering number EN1764B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1405/2SC3599 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1405/2SC3599] Wide-band amp. Features High fT fT typ=500MHz. High breakdown voltage VCEO

Ordering number EN2005B 2SA1416 / 2SC3646 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1416 / 2SC3646 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC

Ordering number EN1972A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1470/2SC3747 60V/7A High-Speed Switching Applications Applications Package Dimensions Inductance, lamp drivers. unit mm Inveters, conveters (strobes, flashes, FLT lighting 2041 circiuts). [2SA1470/2SC3747] Power amplifiers (high-power car stereos, motor control). High-speed switching (switching

Ordering number EN1973A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1469/2SC3746 60V/5A High-Speed Switching Applications Applications Package Dimensions Various inductance lamp drivers for electrical unit mm equipment. 2041 Inverters, converters (strobo, flash, fluorescent lamp [2SA1469/2SC3746] lighting circuit). Power amp (high power car stereo, motor controller).

Ordering number EN2093 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1479/2SC3789 High-Definiton CRT Display Video Output Applications Applications Package Dimensions High-definition CRT display. unit mm Color TV chroma output, high breakdown voltage 2042A drivers. [2SA1479/2SC3789] Features High breakdown voltage (VCEO 300V). Excellent high frequency characte

Ordering number EN1761B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1402/2SC3596 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1402/2SC3596] Wide-band amp. Features High fT fT typ=700MHz. Small reverse transfer capacit

Ordering number EN2006C 2SA1417 / 2SC3647 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching 2SA1417 / 2SC3647 Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density small-sized hybrid ICs. Specifications ( ) 2S

Ordering number EN2524A PNP Epitaxial Planar Silicon Transistor 2SA1437 High-hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003A Features [2SA1437] Very small-sized package permitting sets to be made smaller and slimer. Adoption of FBET process. High DC current gain (hFE=400 to 1000). Hig

Ordering number EN2001A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1471/2SC3748 60V/10A High-Speed Switching Applications Applications Package Dimensions Car-use inductance drivers, lamp drivers. unit mm Inverters drivers, conveters (strobes, flashes, FLT 2041 lighting circuits). [2SA1471/2SC3748] Power amplifiers (high-power car stereos, motor control). High-s

Ordering number EN2253A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1478/2SC3788 High-Definition CRT Display Video Output Applications Features Package Dimensions High breakdown voltage VCEO 200V. unit mm Small reverse transfer capacitance and excellent high 2042A frequency cahaceteristic [2SA1478/2SC3788] Cre=1.2pF (NPN), 1.7pF (PNP). Adoption of FBET proces

Ordering number EN2217A PNP/NPN Epitaxial Planar Silicon Transistor 2SA1450/2SC3708 Low-Frequency Driver Applications Features Package Dimensions Adoption of FBET process. unit mm AF amp, AF power amp. 2003A High breakdown voltage VCEO>80V [2SA1450/2SC3708] JEDEC TO-92 B Base ( ) 2SA1450 EIAJ SC-43 C Collector SANYO NP E Emitter Specifications Absolute

Ordering number EN3471 PNP Epitaxial Planar Silicon Transistor 2SA1433 High-Definition CRT Display Applications Features Package Dimensions High fT (Gain-Bandwidth Product). unit mm Small reverse transfer capacitance (Cre=1.3pF). 2006A Adoption of FBET process. [2SA1433] EIAJ SC-51 B Base SANYO MP C Collector E Emitter Specifications Absolute Maximum Ratings

Ordering number EN1788B 2SA1418 / 2SC3648 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors High-Voltage Switching, 2SA1418 / 2SC3648 Preriver Applications Applications Color TV audio output, inverter. Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Fast switching speed. Ultrasmall siz

Ordering number EN1765A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1406/2SC3600 Ultrahigh-Definition CRT Display Video Output Applications Applications Package Dimensions Ultrahigh-definition CRT display. unit mm Video output. 2009A Color TV chroma output. [2SA1406/2SC3600] Wide-band amp. Features High fT fT typ=400MHz. High breakdown voltage VCEO

Ordering number EN2254 PNP/NPN Epitaxial Planar Silicon Transistors 2SA1480/2SC3790 High-Definiton CRT Display Video Output Applications Features Package Dimensions High breakdown voltage (VCEO 300V). unit mm Small reverse transfer capacitance and excellent high 2042A frequency characteristic [2SA1480/2SC3790] Cre=1.8pF (NPN), 2.3pF (PNP). Adoption of MBIT process.

Ordering number EN1720A PNP/NPN Epitaxial Planar Silicon Transistors 2SA1415/2SC3645 High-Voltage Switching, Predriver Applications Features Package Dimensions Adoption of FBET process. unit mm High breakdown voltage (VCEO=160V). 2038 Excellent linearity of hFE and small Cob. [2SA1415/2SC3645] Fast switching speed. Very small size marking it easy to provide high

Ordering number EN1762B PNP/NPN Epitaxial Planar Silicon Transistors 2SA1403/2SC3597 Ultrahigh-Difinition CRT Display Video Output Applications Applications Package Dimensions Ultrahig-definition CRT display. unit mm Video output. 2009B Color TV chroma output. [2SA1403/2SC3597] Wide-band amp. Features High fT fT typ=800MHz. Small reverse transfer capacit

Ordering number ENN2456 PNP Epitaxial Planar Silicon Transistor 2SA1436 High hFE, AF Amplifier Applications Applications Package Dimensions AF amplifier, various drivers, muting circuit. unit mm 2003B Features [2SA1436] Adoption of MBIT process. 5.0 4.0 4.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol

Ordering number EN2007B 2SA1419 / 2SC3649 SANYO Semiconductors DATA SHEET PNP / NPN Epitaxial Planar Silicon Transistors 2SA1419 / 2SC3649 High-Voltage Switching Applications Features Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s. Specifications ( )

Ordering number EN829H PNP/NPN Epitaxial Planar Silicon Transistors 2SA1481/2SC2960 High-Speed Switching Applications Features Package Dimensions Fast switching speed. unit mm High breakdown voltage. 2033 [2SA1481/2SC2960] B Base C Collector ( ) 2SA1481 E Emitter Specifications SANYO SPA Absolute Maximum Ratings at Ta = 25 C Parameter Symbol Conditions Rating

MCC 2SA1464-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1464-Q CA 91311 Phone (818) 701-4933 2SA1464-R Fax (818) 701-4939 Features PNP Silicon High fT fT=400MHZ Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistors Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates

MCC 2SA1464-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1464-Q CA 91311 Phone (818) 701-4933 2SA1464-R Fax (818) 701-4939 Features PNP Silicon High fT fT=400MHZ Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistors Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates

MCC 2SA1464-P Micro Commercial Components TM 20736 Marilla Street Chatsworth Micro Commercial Components 2SA1464-Q CA 91311 Phone (818) 701-4933 2SA1464-R Fax (818) 701-4939 Features PNP Silicon High fT fT=400MHZ Epoxy meets UL 94 V-0 flammability rating Epitaxial Transistors Moisure Sensitivity Level 1 Lead Free Finish/RoHS Compliant ("P" Suffix designates

DATA SHEET www.onsemi.com Bipolar Transistor ELECTRICAL CONNECTION 2 2 ( )100 V, ( )1 A, Low VCE(sat), (PNP)NPN Single PCP 1 Base 1 1 2 Collector 3 Emitter 2SA1416, 2SC3646 3 3 2SA1416 2SC3646 Features Adoption of FBET and MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 1 2 Ultrasmall Size Making it Easy to Provi

Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number EN2005C 2SA1416/2SC3646 Bipolar Transistor http //onsemi.com ( ) ) ( ), ( 100V, ( 1A, Low VCE sat PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1416 Absol

DATA SHEET www.onsemi.com Bipolar Transistor 1 2 (-)100 V, (-)2 A, Low VCE(sat), 3 SOT-89-3 (PNP) NPN Single PCP CASE 419AU 2SA1417, 2SC3647 ELECTRICAL CONNECTION Features 2 2 Adoption of FBET, MBIT Processes 1 Base High Breakdown Voltage and Large Current Capacity 1 1 2 Collector Ultrasmall Size Making it Easy to Provide High-density Small-sized 3 Emitter

Ordering number EN2006D 2SA1417/2SC3647 Bipolar Transistor http //onsemi.com (-)100V, (-)2A, Low VCE(sat), (PNP)NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density small-sized hybrid ICs Specifications ( ) 2SA1417 Absolute Maximum Rati

Ordering number EN1788C 2SA1418/2SC3648 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 0.7A, Low VCE sat , PNP NPN Single PCP Applicaitons Color TV audio output, inverter Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Fast switching speed Ultrasmall size making it easy to provide high-density, small-

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

Ordering number EN2007C 2SA1419/2SC3649 Bipolar Transistor http //onsemi.com ( ) ( ) ( ) ( ) 160V, 1.5A, Low VCE sat , PNP NPN Single PCP Features Adoption of FBET, MBIT processes High breakdown voltage and large current capacity Ultrasmall size making it easy to provide high-density, small-sized hybrid IC s Specifications ( ) 2SA1419 Absolute Maximum Ratings at

Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 85 V +0.2 +0.2 Collector to emitter voltage VCEO 85 V 0.45 0.1 0.45 0.1

Power Transistors 2SA1499 Silicon PNP epitaxial planar type For high-speed switching Unit mm 10.0 0.2 4.2 0.2 Features 5.5 0.2 2.7 0.2 High foward current transfer ratio hFE High-speed switching 3.1 0.1 High collector to base voltage VCBO Full-pack package which can be installed to the heat sink with one screw. 1.3 0.2 1.4 0.1 Absolute Maximum Ratings (TC=25 C

Transistor 2SA1487 Silicon PNP epitaxial planer type For video amplifier Unit mm 5.9 0.2 4.9 0.2 Features High transition frequency fT. Small collector output capacitance Cob. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 85 V +0.2 +0.2 Collector to emitter voltage VCEO 85 V 0.45 0.1 0.45 0.1

2SA1485 Silicon PNP Epitaxial Application Low frequency amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA1485 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 200 V Collector to emitter voltage VCEO 200 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 200

2SA1468 Silicon PNP Epitaxial Application High voltage amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1468 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 180 V Collector to emitter voltage VCEO 180 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW J

2SA1484 Silicon PNP Epitaxial Application Low frequency amplifier Outline MPAK 3 1 1. Emitter 2. Base 2 3. Collector 2SA1484 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Collector to base voltage VCBO 90 V Collector to emitter voltage VCEO 90 V Emitter to base voltage VEBO 5 V Collector current IC 100 mA Collector power dissipation PC 150 mW Ju

2SA1491 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3855 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -200 V Collector-Emitter Voltage VCEO -140 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -10 A Coll

2SA1490 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER SC-65 High Current Capability High Power Dissipation Complementary to 2SC3854 ABSOLUTE MAXIMUM RATING (Ta=25 C C) C C Characteristic Symbol Rating Unit Collector-Base Voltage VCBO -160 V Collector-Emitter Voltage VCEO -120 V Emitter-Base voltage VEBO -6 V Collector Current (DC) IC -8 A Colle

JMnic Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT 2SA1488 -60

JMnic Product Specification Silicon PNP Power Transistors 2SA1491 DESCRIPTION With TO-3PN package Complement to type 2SC3855 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1490 DESCRIPTION With TO-3PN package Complement to type 2SC3854 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1492 DESCRIPTION With TO-3PN package Complement to type 2SC3856 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1469 DESCRIPTION With TO-220F package Complement to type 2SC3746 Low saturation voltage Excellent current dependence of hFE Short switching time APPLICATIONS Various inductance of lamp drivers for electrical equipment Inverters ,converters Power amplification Switching regulator ,driver PIN

JMnic Product Specification Silicon PNP Power Transistors 2SA1493 DESCRIPTION With MT-200 package Complement to type 2SC3857 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

JMnic Product Specification Silicon PNP Power Transistors 2SA1489 DESCRIPTION With TO-3PN package Complement to type 2SC3853 APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(Ta= ) SYMBOL PARAMETER CONDITIONS VALUE UNIT

JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC

JMnic Product Specification Silicon PNP Power Transistors 2SA1471 DESCRIPTION With TO-220Fpackage Low saturation voltage. Complement to type 2SC3748 Fast switching speed. APPLICATIONS Car-use inductance drivers, lamp drivers. Inverters drivers, converters Power amplifications Switching regulators,drivers PINNING PIN DESCRIPTION 1 Base Collector;con

JMnic Product Specification Silicon PNP Power Transistors 2SA1470 DESCRIPTION With TO-220F package Complement to type 2SC3747 Low saturation voltage Fast switching time APPLICATIONS Inductance,lamp drivers Inverters ,converters Power amplification High-speed switching PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and s

JMnic Product Specification Silicon PNP Power Transistors 2SA1494 DESCRIPTION With MT-200 package Complement to type 2SC3858 APPLICATIONS Audio and general purpose PINNING(see Fig.2) PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (MT-200) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITI

JMnic Product Specification Silicon PNP Power Transistors 2SA1452 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3710 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE U

2SA1492 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3856) Application Audio and General Purpose External Dimensions MT-100(TO3P) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 4.8 0.4 15.6 0.1 9.6 2.0 VCBO 180 V ICBO VCB= 180V 100max A VCEO 180 V IEBO VEB= 6

2SA1493 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3857) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB= 200V 100max A 0.2 24.4 2.1 0.1 2- 3.2 9 VCEO 200

This Material Copyrighted By Its Respective Manufacturer This Material Copyrighted By Its Respective Manufacturer

2SA1488/1488A Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3851/A) Application Audio and General Purpose External Dimensions FM20 (TO220F) Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Ratings Ratings Symbol Unit Symbol Conditions Unit 0.2 4.2 0.2 10.1 2SA1488 2SA1488A 2SA1488 2SA1488A c0.5 2.8 VCBO 60 80 V 100max 10

2SA1494 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC3858) Application Audio and General Purpose External Dimensions MT-200 Absolute maximum ratings (Ta=25 C) Electrical Characteristics (Ta=25 C) Symbol Ratings Unit Symbol Conditions Ratings Unit 0.2 6.0 0.3 36.4 VCBO 200 V ICBO VCB= 200V 100max A 0.2 24.4 2.1 VCEO IEBO VEB= 6V 100max

SMD Type Transistors PNP Silicon Transistor 2SA1412-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High Voltage VCEO=-400V High speed tr 0.7 s 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Co

SMD Type Transistors PNP Transistors 2SA1413-Z TO-252 Unit mm +0.15 6.50-0.15 +0.1 2.30 -0.1 +0.2 5.30-0.2 +0.8 0.50 -0.7 Features High Voltage VCEO=-600V 0.127 High Speed tf 1us +0.1 0.80-0.1 max Complement to 2SC3632-Z + 0.1 1 Base 2.3 0.60- 0.1 +0.15 4.60 -0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol

SMD Type Transistors PNP Transistors 2SA1418 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Fast Switching Speed 0.42 0.1 0.46 0.1 Complementary to 2SC3648 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -16

SMD Type or SMD Type TransistICs PNP Transistors 2SA1434 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Adoption of FBET process. High DC current gain (hFE=500 to 1200). 1 2 Low collector-to-emitter saturation voltage +0.1 +0.05 0.95-0.1 0.1 -0.01 (VCE(sat) 0.5V). 1.9+0.1 -0.1 High VEBO (VEBO 15V). 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25

SMD Type Transistors PNP Transistors 2SA1462 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=-50mA 1 2 Collector Emitter Voltage VCEO=-15V +0.1 +0.05 0.95 -0.1 0.1 -0.01 Complementary to 2SC3735 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collecto

SMD Type Transistors PNP Transistors 2SA1461 SOT-23 Unit mm +0.1 2.9-0.1 +0.1 0.4 -0.1 3 Features High speed switching High gain bandwidth product 1 2 Complementary to 2SC3734 +0.05 0.95+0.1 -0.1 0.1 -0.01 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -40

SMD Type Transistors PNP Transistors 2SA1417 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Complementary to 2SC3647 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100 V Emitter -

SMD Type Transistors Silicon Transistor 2SA1400-Z TO-252 Unit mm +0.15 +0.1 6.50-0.15 2.30-0.1 +0.2 +0.8 5.30-0.2 0.50-0.7 Features High Voltage VCEO=-400V High speed tr 1.0 s 0.127 +0.1 max 0.80-0.1 +0.1 2.3 0.60-0.1 1 Base +0.15 4.60-0.15 2 Collector 3 Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to Base Voltage VCBO -400 V Collec

SMD Type or SMD Type TransistICs PNP Transistors 2SA1411 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Very high DC current gain hFE=500 to 1600. High VEBO Voltage VEBO=-10V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO -25 V Collector-emitte

SMD Type Transistors PNP Transistors 2SA1463 Features 1.70 0.1 High speed ,high voltage switching Low collector saturaton voltage Complementary to 2SC3736 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base

SMD Type Transistors PNP Transistors 2SA1464 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High fT fT =400MHz Complementary to 2SC3739 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO

SMD Type Transistors PNP Transistors 2SA1419 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity Complementary to 2SC3649 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -160 V Emitter -

SMD Type Transistors PNP Transistors 2SA1468 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features High voltage amplifier 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Emitter Voltage VCEO -180 V Emitter - Base Vol

SMD Type Transistors PNP Transistors 2SA1415 1.70 0.1 Features Adoption of FBET Process High Breakdown Voltage (VCEO = 160V) Excellent Linearlity of hFE and Small Cob 0.42 0.1 0.46 0.1 Fast Switching Speed Complementary to 2SC3645 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -180 Collector - Em

SMD Type Transistors PNP Transistors 2SA1483 Features 1.70 0.1 High transition frequency Low collector output capacitance Complementary to 2SC3803 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -60 Collector - Emitter Voltage VCEO -45 V Emitter - Base Voltage

SMD Type or SMD Type TransistICs PNP Transistors 2SA1484 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 Features Collector Current Capability IC=100mA Collector Emitter Voltage VCEO=-90V 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector to base voltage VCBO -90

SMD Type Transistors PNP Transistors 2SA1416 1.70 0.1 Features Adoption of FBET, MBIT Processes High Breakdown Voltage and Large Current Capacity 0.42 0.1 0.46 0.1 Fast Switching Time Complementary to 2SC3646 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -120 Collector - Emitter Voltage VCEO -100

2SA1478(3CA1478) PNP /SILICON PNP TRANSISTOR CRT Purpose High-definition CRT display video output applications. , 2SC3788(3DA3788) Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency

2SA1480(3CA1480) PNP /SILICON PNP TRANSISTOR Purpose High-definition CRT display video output applications. Features High breakdown voltage, small reverse transfer capacitance and excellent high frequency characteristic. /Absolu

2SA1492T4BL Silicon PNP Power Transistor DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emitter Voltage -180 V CEO V Emitt

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1452 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SC3710 APPLICATIONS Designed for high current switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Vol

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1232 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -130V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3012 APPLICATIONS For audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -130 V CBO V Collector-

SPTECH Product Specification SPTECH Silicon PNP Power Transistor 2SA1492 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage -180 V CBO V Collector-Emit

isc Silicon NPN Power Transistor 2SA1412-Z DESCRIPTION With TO-252(DPAK) packaging Excellent linearity of h FE Low collector-to-emitter saturation voltage Fast switching speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Relay drivers High-speed inverters Converters High current switching applications ABSOLUTE MA

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1488 2SA1488A DESCRIPTION With TO-220F package Complement to type 2SC3851/3851A APPLICATIONS Audio and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-220F) and symbol 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE

isc Silicon PNP Power Transistor 2SA1413-Z DESCRIPTION With TO-252(DPAK) packaging Large collector current Low collector saturation voltage High power dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in DC-DC converter Driver of solenoid or motor ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PAR

isc Silicon PNP Power Transistor 2SA1486 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO With TO-126 package Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low frequency power amplifiers applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltag

isc Silicon PNP Power Transistor 2SA1491 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -140V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3855 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

isc Silicon PNP Power Transistor 2SA1488A DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = -1A FE C Complement to Type 2SC3851A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon PNP Power Transistor 2SA1490 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -120V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3854 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

isc Silicon PNP Power Transistor 2SA1492 DESCRIPTION High Collector-Emitter Breakdown Voltage- V = -180V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3856 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT

isc Silicon PNP Power Transistor 2SA1469 DESCRIPTION DC Current Gain- h = 70(Min)@ (V = -2V, I = -1A) FE CE C Low Saturation Voltage- V = -0.4V(Max)@ (I = -2.5A, I = -0.125A) CE(sat) C B Fast Switching Time Complement to Type 2SC3746 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for el

isc Silicon PNP Power Transistor 2SA1444 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t

isc Silicon PNP Power Transistor 2SA1493 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -200V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3857 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Col

Inchange Semiconductor Product Specification Silicon PNP Power Transistors 2SA1451 DESCRIPTION With TO-220Fa package Low collector saturation voltage High speed switching time Complement to type 2SC3709 APPLICATIONS High current switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER C

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1400Z DESCRIPTION High Collector-Emitter Voltage - V = -400V(Min) CEO Complement to Type 2SC3588Z Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage switching ,especially in Hybrid integrated cricuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMB

isc Silicon PNP Power Transistor 2SA1489 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -80V(Min) (BR)CEO Good Linearity of h FE Complement to Type 2SC3853 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Coll

isc Silicon PNP Power Transistor 2SA1441 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power

isc Silicon PNP Power Transistor 2SA1488 DESCRIPTION Collector-Emitter Breakdown Voltage- V = -60V(Min) (BR)CEO DC Current Gain- h = 40(Min)@ I = -1A FE C Complement to Type 2SC3851 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for audio and general purpose applications. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon PNP Power Transistor 2SA1443 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t

isc Silicon PNP Power Transistor 2SA1442 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1.5A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power

isc Silicon PNP Power Transistor 2SA1471 DESCRIPTION DC Current Gain- h = 70(Min)@ (V = -2V, I = -1A) FE CE C Low Saturation Voltage- V = -0.4V(Max)@ (I = -5A, I = -0.25A) CE(sat) C B Fast Switching Time Complement to Type 2SC3748 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for elect

isc Silicon PNP Power Transistor 2SA1440 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -0.5A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -2A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power

isc Silicon PNP Power Transistor 2SA1470 DESCRIPTION DC Current Gain- h = 70(Min)@ (V = -2V, I = -1A) FE CE C Low Saturation Voltage- V = -0.4V(Max)@ (I = -3.5A, I = -0.175A) CE(sat) C B Fast Switching Time Complement to Type 2SC3747 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Various inductance lamp drivers for el

INCHANGE Semiconductor isc Product Specification isc Silicon PNP Power Transistor 2SA1494 DESCRIPTION Collector-Emitter Breakdown Voltage- V(BR)CEO= -200V(Min) Good Linearity of hFE Complement to Type 2SC3858 APPLICATIONS For audio and general purpose applications ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage -200 V V

INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA1452 DESCRIPTION Low Collector Saturation Voltage- V = -0.4V(Max)@I = -6A CE(sat) C Good Linearity of h FE High Switching Speed Complement to Type 2SC3710 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high current switching applications ABSOLUTE M