Ordering number:EN1762BPNP/NPN Epitaxial Planar Silicon Transistors2SA1403/2SC3597Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahig-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1403/2SC3597] Wide-band amp.Features High fT : fT typ=800MHz. Small reverse transfer capacit

Ordering number:EN1766CPNP/NPN Epitaxial Planar Silicon Transistors2SA1407/2SC3601Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1407/2SC3601] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

Ordering number:EN1764BPNP/NPN Epitaxial Planar Silicon Transistors2SA1405/2SC3599Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1405/2SC3599] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO

Ordering number:EN1761BPNP/NPN Epitaxial Planar Silicon Transistors2SA1402/2SC3596Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1402/2SC3596] Wide-band amp.Features High fT: fT typ=700MHz. Small reverse transfer capacit

Ordering number:EN1763BPNP/NPN Epitaxial Planar Silicon Transistors2SA1404/2SC3598Ultrahigh-Difinition CRT DisplayVideo Output ApplicationsApplictions Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009B Color TV chroma output.[2SA1404/2SC3598] Wide-band amp.Features High fT : fT typ=500MHz. High breakdown voltage : VCEO

Ordering number:EN1765APNP/NPN Epitaxial Planar Silicon Transistors2SA1406/2SC3600Ultrahigh-Definition CRT DisplayVideo Output ApplicationsApplications Package Dimensions Ultrahigh-definition CRT display.unit:mm Video output.2009A Color TV chroma output.[2SA1406/2SC3600] Wide-band amp.Features High fT : fT typ=400MHz. High breakdown voltage : VCEO

SMD Type TransistorsSilicon Transistor2SA1400-ZTO-252Unit: mm+0.15 +0.16.50-0.15 2.30-0.1+0.2 +0.85.30-0.2 0.50-0.7FeaturesHigh Voltage: VCEO=-400VHigh speed:tr 1.0s0.127+0.1 max0.80-0.1+0.12.3 0.60-0.11 Base+0.154.60-0.152 Collector3 EmitterAbsolute Maximum Ratings Ta = 25Parameter Symbol Rating UnitCollector to Base Voltage VCBO -400 VCollec

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1400ZDESCRIPTIONHigh Collector-Emitter Voltage -: V = -400V(Min)CEOComplement to Type 2SC3588ZMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high voltage switching ,especially inHybrid integrated cricuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMB