Биполярный транзистор 2SA1433 - описание производителя. Основные параметры. Даташиты.
Наименование производителя: 2SA1433
Тип материала: Si
Полярность: PNP
Максимальная рассеиваемая мощность (Pc): 0.9 W
Макcимально допустимое напряжение коллектор-база (Ucb): 70 V
Макcимальный постоянный ток коллектора (Ic): 0.05 A
Предельная температура PN-перехода (Tj): 150 °C
Граничная частота коэффициента передачи тока (ft): 500 MHz
Ёмкость коллекторного перехода (Cc): 1.1 pf
Статический коэффициент передачи тока (hfe): 70
Корпус транзистора: TO92
2SA1433 Datasheet (PDF)
2sa1433.pdf
Ordering number:EN3471PNP Epitaxial Planar Silicon Transistor2SA1433High-Definition CRT Display ApplicationsFeatures Package Dimensions High fT (Gain-Bandwidth Product).unit:mm Small reverse transfer capacitance (Cre=1.3pF).2006A Adoption of FBET process.[2SA1433]EIAJ : SC-51 B : BaseSANYO : MP C :CollectorE : EmitterSpecificationsAbsolute Maximum Ratings
2sa1435.pdf
Ordering number:ENN1856APNP Epitaxial Planar Silicon Transistor2SA1435High hFE, AF Amplifier ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2003B[2SA1435]Features 5.04.04.0 Adoption of MBIT process. High DC current gain (hFE=500 to 1200). Large current capacity. Low colletor-to-e
2sa1434.pdf
Ordering number:EN1853APNP Epitaxial Planar Silicon Transistor2SA1434High hFE, Low-FrequencyGeneral-Purpose Amp ApplicationsApplications Package Dimensions Low frequency general-purpose amplifiers, drivers,unit:mmmuting circuits.2018A[2SA1434]Features Very small-sized package permitting 2SA1434-usedsets to be made smaller, slimer. Adoption of FBET process.
2sa1437.pdf
Ordering number:EN2524APNP Epitaxial Planar Silicon Transistor2SA1437High-hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003AFeatures[2SA1437] Very small-sized package permitting sets to be madesmaller and slimer. Adoption of FBET process. High DC current gain : (hFE=400 to 1000). Hig
2sa1436.pdf
Ordering number:ENN2456PNP Epitaxial Planar Silicon Transistor2SA1436High hFE, AF Amplifier ApplicationsApplications Package Dimensions AF amplifier, various drivers, muting circuit.unit:mm2003BFeatures[2SA1436] Adoption of MBIT process.5.04.04.0 High DC current gain (hFE=500 to 1200). Large current capacity. Low collector-to-emitter saturation vol
2sa1434.pdf
SMD Type orSMD Type TransistICsPNP Transistors 2SA1434SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.13FeaturesAdoption of FBET process.High DC current gain (hFE=500 to 1200).1 2Low collector-to-emitter saturation voltage+0.1+0.050.95-0.1 0.1 -0.01(VCE(sat) 0.5V).1.9+0.1-0.1High VEBO (VEBO 15V).1.Base2.Emitter3.collectorAbsolute Maximum Ratings Ta = 25
Другие транзисторы... 2SA1430B , 2SA1430C , 2SA1431 , 2SA1431O , 2SA1431Y , 2SA1432 , 2SA1432O , 2SA1432R , 2SB817 , 2SA1434 , 2SA1435 , 2SA1436 , 2SA1437 , 2SA1438 , 2SA144 , 2SA1440 , 2SA1441 .
Список транзисторов
Обновления
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050