2SA1444. Аналоги и основные параметры
Наименование производителя: 2SA1444
Тип материала: Si
Полярность: PNP
Предельные значения
Максимальная рассеиваемая мощность (Pc): 30 W
Макcимально допустимое напряжение коллектор-база (Ucb): 100 V
Макcимальный постоянный ток коллектора (Ic): 15 A
Предельная температура PN-перехода (Tj): 175 °C
Электрические характеристики
Статический коэффициент передачи тока (hFE): 60
Корпус транзистора: TO220
Аналоги (замена) для 2SA1444
- подборⓘ биполярного транзистора по параметрам
2SA1444 даташит
..2. Size:218K inchange semiconductor
2sa1444.pdf 
isc Silicon PNP Power Transistor 2SA1444 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -3A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -8A, I = -0.4A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t
8.3. Size:164K jmnic
2sa1443.pdf 
JMnic Product Specification Silicon PNP Power Transistors 2SA1443 DESCRIPTION With TO-220Fa package Low collector saturation voltage Fast switching speed High DC current gain APPLICATIONS High speed power switching applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VC
8.4. Size:217K inchange semiconductor
2sa1441.pdf 
isc Silicon PNP Power Transistor 2SA1441 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -3A, I = -0.15A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power
8.5. Size:218K inchange semiconductor
2sa1443.pdf 
isc Silicon PNP Power Transistor 2SA1443 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -2A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -6A, I = -0.3A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power t
8.6. Size:217K inchange semiconductor
2sa1442.pdf 
isc Silicon PNP Power Transistor 2SA1442 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -1.5A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -4A, I = -0.2A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power
8.7. Size:217K inchange semiconductor
2sa1440.pdf 
isc Silicon PNP Power Transistor 2SA1440 DESCRIPTION Collector-Emitter Sustaining Voltage- V = -60V(Min) CEO(SUS) High DC Current Gain- h = 100(Min)@ (V = -2V , I = -0.5A) FE CE C Low Saturation Voltage- V = -0.3V(Max)@ (I = -2A, I = -0.1A) CE(sat) C B Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS This type of power
Другие транзисторы: 2SA1436, 2SA1437, 2SA1438, 2SA144, 2SA1440, 2SA1441, 2SA1442, 2SA1443, 2SC5198, 2SA145, 2SA1450, 2SA1450R, 2SA1450S, 2SA1450T, 2SA1451, 2SA1451O, 2SA1451Y
